BFQ19 Search Results

BFQ19

Abstract: BFQ19C
Contextual Info: BFQ19 NPN 5 GHz wideband transistor Rev. 03 — 28 September 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

BFQ19

Abstract: UBB774 transistor dc 558 npn 947 transistor A 1282 transistor DGSS D 1652 transistor
Contextual Info: 1^53^31 DGSSDt.2 715 B A P X Philips Sem iconductors Product specification NPN 5 GHz wideband transistor BFQ19 N AUER PHILIPS/DISCRETE DESCRIPTION b7E ]>' PINNING NPN transistor In a SOT89 plastic envelope intended for application in thick and thin-film circuits. It is

BFQ19S

Contextual Info: BFQ19S NPN Silicon RF Transistor 1
For low noise, low distortion broadband 2 amplifiers in antenna and 3 telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 2 VPS05162 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFQ19S NPN Silicon RF Transistor • For low noise, low distortion broadband 1 2 amplifiers in antenna and 3 telecommunications systems up to 1.5 GHz 2 at collector currents from 10 mA to 70 mA • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available

Contextual Info: MOTOROLA SC XSTRS/R F MOTOROLA 4bE D • b3b?254 OOlSOfi? 3 I noTb r - 3 \~ J .$ SE M IC O N D U C T O R TECHNICAL DATA MRFQ19 The RF Line DIE SOURCE SAME AS BFQ19 N P N S ilic o n H ig h F re q u e n cy T r a n s isto r iC m ISO mA SURFACE MOUNT HIGH FREQUENCY

BAW78D

Abstract: BFQ19S
Contextual Info: BFQ19S NPN Silicon RF Transistor* • For low noise, low distortion broadband 1 amplifiers in antenna and 2 3 telecommunications systems up to 1.5 GHz 2 at collector currents from 10 mA to 70 mA • Pb-free RoHS compliant package 1) • Qualified according AEC Q101

BFQ19S E6327

Abstract: BAW78D BFQ19S E6327
Contextual Info: BFQ19S NPN Silicon RF Transistor 1
For low noise, low distortion broadband 2 amplifiers in antenna and 3 telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 2 VPS05162 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFQ19S NPN Silicon RF Transistor* • For low noise, low distortion broadband 1 2 amplifiers in antenna and 3 2 telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA • Pb-free RoHS compliant package 1) • Qualified according AEC Q101

BFQ19

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFQ19 NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFQ19 PINNING NPN transistor in a SOT89 plastic

BFG195

Abstract: SOT103 BFQ195 BFG197 BFG198 X3A-BFQ195 320nm
Contextual Info: P rodu ct spe cification P h ilip s S em icon du ctors T-31-9 o NPN 8 GHz wideband transistor crystal PHILIPS INTERNATIONAL X3A-BFQ195 SbE D • TllGflSb □□HbDTfl 3 ^ IPHIN M E C H A N IC A L DATA DESCRIPTION C rystal NPN crystal used in BFG195 SOT103 , BFG197

BAW78D

Abstract: BFQ19S transistor MARKING CODE LAYOUT G SOT89
Contextual Info: BFQ19S NPN Silicon RF Transistor* • For low noise, low distortion broadband 1 amplifiers in antenna and 2 3 telecommunications systems up to 1.5 GHz 2 at collector currents from 10 mA to 70 mA • Pb-free RoHS compliant package 1) • Qualified according AEC Q101

X3A-BFQ195

Abstract: BFG195 BFG197 BFG198
Contextual Info: Philips Semiconductors |H bb SB T B l NPN 8 GHz wideband transistor crystal D0322Dfl 757 APY Product specification X3A-BFQ195 N AMER PHILIPS/DISCRETE LTE ]> MECHANICAL DATA DESCRIPTION Crystal NPN crystal used in BFG195 SOT103 , BFG197 (SOT143) and BFG198 (SOT223). Crystals are supplied

S*S Technologies

Contextual Info: BFQ19S NPN Silicon RF Transistor* • For low noise, low distortion broadband 1 amplifiers in antenna and 2 3 telecommunications systems up to 1.5 GHz 2 at collector currents from 10 mA to 70 mA * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFQ19S NPN Silicon RF Transistor 1
For low noise, low distortion broadband 2 amplifiers in antenna and 3 telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 2 VPS05162 ESD: Electrostatic discharge sensitive device, observe handling precaution!

MXR5583

Abstract: MXR5943 BFQ17 BFQ18A BFQ19 MR3866 MXR5160
Contextual Info: SURFACE MOUNT PRODUCTS continued SOT-89 Transistors (continued) RF NPN hFE *T Device Min (MHz) BFQ19 BFQ18A MXR5943 BFQ17 MR3866 IC (mA) V b R(CEO ) Min 50 25 25 25 25 10 200 50 50 50 50 50 25 10 100 - 100 50 4000 3200* 1200 1200 500 50 150 50 15 15 30

Contextual Info: □(□53=131 0035DL.2 715 B A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFQ19 N AMER PHILIPS/DISCRETE DESCRIPTION b7E ]> PINNING NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. It is

Contextual Info: S IE M E N S BFQ19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1,5GHz at collector currents from 10 mA to 70 mA • C EC C -type available: C E C C 50 002/259 E S P : Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFQ19S Low Noise Silicon Bipolar RF Transistor • For low noise, low distortion broadband 1 amplifiers in antenna and 2 3 telecommunications systems up to 1.5 GHz 2 at collector currents from 10 mA to 70 mA • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available

Contextual Info: BFQ19S NPN Silicon RF Transistor* • For low noise, low distortion broadband 2 3 amplifiers in antenna and telecommunications systems up to 1.5 GHz 1 at collector currents from 10 mA to 70 mA * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

transistor bfq19

Abstract: BFQ19 MBB773
Contextual Info: BFQ19 NPN 5 GHz wideband transistor Rev. 03 — 28 September 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

Contextual Info: bbS3T31 0Q322Dfl 757 Philips Semiconductors APY Product specification NPN 8 GHz wideband transistor crystal X3A-BFQ195 AUER PHILIPS/DISCRETE b'JE ]> MECHANICAL DATA DESCRIPTION Crystal NPN crystal used in BFG195 SOT103 , BFG197 (SOT143) and BFG198 (SOT223). Crystals are supplied

MRFQ19

Contextual Info: MOTOROLA • SEM IC O N D U C T O R TECHNICAL DATA MRFQ19 The RF Line DIE SO URCE SA M E A S BFQ19 N P N S ilic o n H ig h Frequ ency T ra n sisto r lc = 150 mA SURFACE M O U N T HIGH FREQUENCY TRANSISTOR NPN SILICON . . . d e sig n e d fo r am plifier, o scillator or fre q u e n cy m ultiplier a p p lica tio n s in industrial

Contextual Info: BFQ19S NPN Silicon RF Transistor • For low noise, low distortion broadband 1 amplifiers in antenna and 2 3 telecommunications systems up to 1.5 GHz 2 at collector currents from 10 mA to 70 mA • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available

BFT97

Abstract: Siemens 1985 BFT65 bfr91a siemens BFQ64P BFT98T BFS55A bf254 BFR96S
Contextual Info: S IE M E N S / SPCLt SEMICONDS ' ' ?QC D • fiS 3b 3E Q 0013325 1 ■ RF Transistors Type PNP= P NPN= N Typical Application epitaxial=E planar = PL E, PL Maximum Ratings Vcbo V VcEO (V) ^80 (V) (mA) fe ft (°C) 40 25 4 25 150 Plot (mW) (°C/W) 500 N Uncontrolled TV IF amplifier stages