IRGBC40U Search Results

IRGBC40U

Abstract: D-12
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.683A IRGBC40U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

D-12

Abstract: IRGBC40U G607 1RGBC40U
Contextual Info: PD - 9.683A International «»Rectifier IRGBC40U UltraFasi IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

C667 transistor

Abstract: transistor C663 IRGBC40U D-12 C665 C-666
Contextual Info: PD - 9.683A IRGBC40U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V

C668 transistor

Abstract: C667 transistor D-12 IRGBC40U
Contextual Info: PD - 9.683A IRGBC40U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V

C667 transistor

Abstract: D-12 IRGBC40U DSA00104749.txt
Contextual Info: PD - 9.683A IRGBC40U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V

Contextual Info: PD - 9.683A International Ek>ri Rectifier IRGBC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

C667 transistor

Abstract: IRGBC40U TRANSISTOR BIPOLAR 400V 20A C-666
Contextual Info: kitemational g«»]Rectifier PD - 9.683A IRGBC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail* losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

IRGKI200F06

Abstract: IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06
Contextual Info: IGBT Designer’s Manual Selection Guide B-1 Single Switch without Diode Current Rating A 500 5-10 11-15 IRGB420U IRGP420U 16-20 21-25 IRGB430U IRGP430U 26-30 31-40 600 900 1200 IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGBC20U IRGPC20U

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)

TRANSISTOR 9642

Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
Contextual Info: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics

IRGKI200F06

Abstract: IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06
Contextual Info: IGBTs International Rectifier Max V CE on Collector-to-Emitter Collector-to-Emitter Voltage Voltage V CES Part Number (V) (V) IC Continuous Collector Current T C= 25°C T C = 100°C (A) (A) P Max. D Power Dissipation (W) Fax-on-Demand Low VCE(on) IGBTs for Low Frequency (DC ~ 1kHz) Power Applications

9544 transistor

Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
Contextual Info: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics

IRGB430UD2

Abstract: IRGTI140U06 CPV362MU IRGPC50U
Contextual Info: Illl E S S I n t e r n a t i o n a l R e c t if i e r Insulated Gate Bipolar Transistors VCES Colector to Emitter Voltage Volts PMt Number M«*VcE(on) Colector to Emitter Voltage (Volts) IGBTs ICContinuous Colector Current Tc=25‘ C Tc=100*C (Amps) (Amps)

AN-983

Abstract: AN983 INT-944 PN channel MOSFET 10A equivalent irf840 IRF840 complementary irgbc20u Similar Equivalent transistors for IRGPC50U sec irf840 TRANSISTOR mosfet IRF840
Contextual Info: Application Note AN-983 IGBT Characteristics 1. How The IGBT Complements The Power MOSFET . 1 2. Silicon Structure And Equivalent Circuit . 2 3. Conduction Characteristics. 2

IGBT

Abstract: igbt subcircuit AN1043 Spice Model for TMOS Power MOSFETs igbt spice igbt spice model Spice Model for TMOS Power MOSFETs igbt testing KP21 3 phase IGBT inverter 90-73
Contextual Info: A SPICE MODEL FOR IGBTs A. F. Petrie, Independent Consultant, 7 W. Lillian Ave., Arlington Heights, IL 60004 Charles Hymowitz, Intusoft, 222 West 6th St. Suite 1070, San Pedro, CA 90731, 310 833-0710, FAX (310) 833-9658, E-mail 74774.2023@compuserve.com

CPV362MU

Contextual Info: International ËüRectffier iGBTs UltraFast IGBTs for Higher Frequency 10 -3 0 k H z Pow er Applications High Efficiency/— Optimized for Pow er Conversion UltraFast •c Part Number V CES Collector to Emitter Voltage Majt VcE(on) Collector to Emitter

IRGPH50U

Abstract: IRGPH50FD2 IRGB420UD2 IRGTA090F06 IRGP420UD2 IRGTI090U06 IRGBC30U irgph40fd1 IRGTI140U06 irgpc50m
Contextual Info: Co-Packs - IGBT's Other Products Fro m IR Fast Speed Co-Packs Applications: Motor Controls, U P S ’s Industrial V B R C E S C o lle c to r to P a rt N u m b e r E m itte r B re a k d o w n V C E (o n ) 'c C o lle c to r to C o n tin u o u s C o llec tor

"AN-978" IR2110

Abstract: IR2110 CHOPPER AN937A AN-978 IR2110 bc40f AN-937A IR2110 LDIC NOTES ENG233 AN944A
Contextual Info: APPLICATION NOTES Savings tips that add value to your designs. INTERNATIONAL RECTIFIER¥APPLICATION ENG¥233 KANSAS ST.¥EL AN-990AJ IGBTの応用特性 HEXFREDはInternational Rectifier社の商標 By Steve Clemente

IRFBE30 equivalent

Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
Contextual Info: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566

INT-944

Abstract: AN983 INT990 IRF 949 C50U IRGPC50U IRGBC40U P channel 600v 20a IGBT sec irf840 AN-983
Contextual Info: Index AN-983 v.Int IGBT Characteristics (HEXFET is a trademark of International Rectifier) Topics covered: How the IGBT complements the MOSFET Silicon structure and equivalent circuit Conduction characteristics and “switchback” Switching characteristics

IRGDDN600M06

Abstract: IRGPH20K IRGPC20F IRGPF30F irgpc50md2 *gBC20f IRGPC50U
Contextual Info: Insulated Gate BiPolar Transistors — IGBTs and IGBT / UltraFasf Diodes — CoPack Discrete and Module Types 1. 1 0- - 0 Q i w r r Chopper Low Side Switch Single switch witn uiooej Single Switch (without Diode o Current

INT-944

Abstract: Equivalent transistors for IRGPC50U IRF 949 AN983 all transistor IRF 310 INT-990 irgbc20u Similar 7A, 100v fast recovery diode LOW FORWARD VOLTAGE DROP DIODE RECTIFIER mosfet 10a 600v
Contextual Info: AN-983 v.Int IGBT Characteristics (HEXFET is a trademark of International Rectifier) Topics covered: How the IGBT complements the MOSFET Silicon structure and equivalent circuit Conduction characteristics and “switchback” Switching characteristics

220v AC voltage stabilizer schematic diagram

Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122

Contextual Info: •I 4055452 0Glbl47 322 ■ INR Discrete IGBTs other Products From IR UltraFast IGBTs Applications: SM PS’s, Motor Controls, Robotics, PF Correction V BR CES Collecter lo Emitter Breakdown Part Number Vg EIUi ) Gate to Emitter Threshold Voltage Voltage