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    IPP070N06N Datasheets (2)

    Infineon Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IPP070N06N G
    		Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 60.0 V; RDS (on) (max) (@10V): 7.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 80.0 A; Original PDF 472.76KB 11
    IPP070N06NG
    		Infineon Technologies OptiMOS Power-Transistor Original PDF 452.2KB 10

    IPP070N06N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DD 127 D TRANSISTOR

    Abstract: IPP066N06N g33 smd 860 IPB066N06N 066N06N PG-TO220-3 IPB070N06N
    Contextual Info: IPB070N06N G OptiMOS Power-Transistor IPP070N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature


    Original     		ipb070n06nipp070n06nipb066n06np-to263-3-2+6p-to220-3-1066n06nipp066n06ndd 127 d transistorg33 smd 860pg-to220-3 PDF

    DD 127 D TRANSISTOR

    Abstract: IPB066N06N IPP066N06N g33 smd 860
    Contextual Info: IPB070N06N G IPP070N06N G IPI070N06N G OptiMOS Power-Transistor Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 m: 80 A • 175 °C operating temperature


    Original     		ipb070n06nipp070n06nipi070n06nipb066n06n+6pg-to263-3p-to263-3-2pg-to220-3dd 127 d transistoripp066n06ng33 smd 860 PDF