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    066N06N Search Results

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    Infineon Technologies AG BSC066N06NSATMA1

    MOSFET N-CH 60V 64A TDSON-8-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () BSC066N06NSATMA1 Digi-Reel 7,250 1
    • 1 $1.23
    • 10 $0.77
    • 100 $0.51
    • 1000 $0.36
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    BSC066N06NSATMA1 Tape & Reel 7,250 5,000
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    BSC066N06NSATMA1 Cut Tape 7,250 1
    • 1 $1.23
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    Avnet Americas BSC066N06NSATMA1 Tape & Reel 52 Weeks 5,000
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    Mouser Electronics () BSC066N06NSATMA1 21,937
    • 1 $2.05
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    BSC066N06NSATMA1 21,710
    • 1 $2.05
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    Newark () BSC066N06NSATMA1 Tape & Reel 15,162 100
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    BSC066N06NSATMA1 Cut Tape 15,162 5
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    BSC066N06NSATMA1 Tape & Reel 5,000
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    Rochester Electronics BSC066N06NSATMA1 88,253 1
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    TME BSC066N06NSATMA1 5,000
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    EBV Elektronik BSC066N06NSATMA1 20,000 53 Weeks 5,000
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    Win Source Electronics BSC066N06NSATMA1 36,172
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    Infineon Technologies AG BSC066N06NS

    MOSFETs IFX FET 60V
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    Mouser Electronics () BSC066N06NS 9,478
    • 1 $2.07
    • 10 $1.30
    • 100 $0.85
    • 1000 $0.60
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    BSC066N06NS 9,299
    • 1 $2.07
    • 10 $1.30
    • 100 $0.85
    • 1000 $0.60
    • 10000 $0.51
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    Bristol Electronics BSC066N06NS 72 1
    • 1 $1.69
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    • 100 $0.68
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    ComSIT USA BSC066N06NS 3,501
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    Win Source Electronics BSC066N06NS 36,027
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    • 100 $0.82
    • 1000 $0.55
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    VBsemi Electronics Co Ltd BSC066N06NS-VB

    MOSFETs; BSC066N06NS-VB; VBSEMI
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    Maritex BSC066N06NS-VB 49 5
    • 1 $2.60
    • 10 $0.83
    • 100 $0.83
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    066N06N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IEC61249-2-21

    Abstract: IPB066N06N IPP066N06N C2320
    Contextual Info: IPB070N06N G IPP070N06N G IPI070N06N G OptiMOS Power-Transistor Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature


    Original
    IPB070N06N IPP070N06N IPI070N06N IEC61249-2-21 IPB066N06N P-TO263-3-2 P-TO263-3 IEC61249-2-21 IPP066N06N C2320 PDF

    DD 127 D TRANSISTOR

    Abstract: IPB066N06N IPP066N06N g33 smd 860
    Contextual Info: IPB070N06N G IPP070N06N G IPI070N06N G OptiMOS Power-Transistor Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature


    Original
    IPB070N06N IPP070N06N IPI070N06N IPB066N06N P-TO263-3 P-TO263-3-2 P-TO220-3 DD 127 D TRANSISTOR IPP066N06N g33 smd 860 PDF

    Contextual Info: Type 066N06NS OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel 1 • Qualified according to JEDEC for target applications


    Original
    BSC066N06NS IEC61249-2-21 066N06NS PDF

    DD 127 D TRANSISTOR

    Abstract: IPP066N06N g33 smd 860 IPB066N06N 066N06N PG-TO220-3 IPB070N06N
    Contextual Info: IPB070N06N G OptiMOS Power-Transistor IPP070N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature


    Original
    IPB070N06N IPP070N06N IPB066N06N P-TO263-3-2 P-TO220-3-1 066N06N IPP066N06N DD 127 D TRANSISTOR g33 smd 860 066N06N PG-TO220-3 PDF

    DD 127 D TRANSISTOR

    Abstract: IPB066N06N IPP066N06N g33 smd 860
    Contextual Info: IPB070N06N G IPP070N06N G IPI070N06N G OptiMOS Power-Transistor Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 m: 80 A • 175 °C operating temperature


    Original
    IPB070N06N IPP070N06N IPI070N06N IPB066N06N PG-TO263-3 P-TO263-3-2 PG-TO220-3 DD 127 D TRANSISTOR IPP066N06N g33 smd 860 PDF