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    066N06N Search Results

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    066N06N Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG BSC066N06NSATMA1

    MOSFET N-CH 60V 64A TDSON-8-6
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    DigiKey BSC066N06NSATMA1 Reel 5,000 5,000
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    Avnet Americas BSC066N06NSATMA1 Reel 26 Weeks 5,000
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    Mouser Electronics BSC066N06NSATMA1 8,902
    • 1 $1.54
    • 10 $1.07
    • 100 $0.68
    • 1000 $0.55
    • 10000 $0.46
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    Newark () BSC066N06NSATMA1 Cut Tape 2,933 5
    • 1 $1.50
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    BSC066N06NSATMA1 Reel 5,000
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    Rochester Electronics BSC066N06NSATMA1 3,907 1
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    Ameya Holding Limited BSC066N06NSATMA1 5,000
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    Rutronik BSC066N06NSATMA1 Reel 140,000 5,000
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    Chip One Stop BSC066N06NSATMA1 Cut Tape 4,630 0 Weeks, 1 Days 1
    • 1 $1.37
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    IBS Electronics BSC066N06NSATMA1 260,000 5,000
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    Win Source Electronics BSC066N06NSATMA1 42,490
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    Infineon Technologies AG BSC066N06NS

    MOSFETs TRENCH 40<-<100V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BSC066N06NS 3,421
    • 1 $1.85
    • 10 $1.18
    • 100 $0.78
    • 1000 $0.56
    • 10000 $0.46
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    Bristol Electronics BSC066N06NS 72 3
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    • 10 $1.69
    • 100 $0.63
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    ComSIT USA BSC066N06NS 4,377
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    Maritex BSC066N06NS 38,000 1
    • 1 $0.67
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    Win Source Electronics BSC066N06NS 26,000
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    • 100 $0.82
    • 1000 $0.55
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    066N06N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IEC61249-2-21

    Abstract: IPB066N06N IPP066N06N C2320
    Contextual Info: IPB070N06N G IPP070N06N G IPI070N06N G OptiMOS Power-Transistor Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature


    Original     		IPB070N06N IPP070N06N IPI070N06N IEC61249-2-21 IPB066N06N P-TO263-3-2 P-TO263-3 IEC61249-2-21 IPP066N06N C2320 PDF

    DD 127 D TRANSISTOR

    Abstract: IPB066N06N IPP066N06N g33 smd 860
    Contextual Info: IPB070N06N G IPP070N06N G IPI070N06N G OptiMOS Power-Transistor Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature


    Original     		IPB070N06N IPP070N06N IPI070N06N IPB066N06N P-TO263-3 P-TO263-3-2 P-TO220-3 DD 127 D TRANSISTOR IPP066N06N g33 smd 860 PDF

    Contextual Info: Type 066N06NS OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel 1 • Qualified according to JEDEC for target applications


    Original     		BSC066N06NS IEC61249-2-21 066N06NS PDF

    DD 127 D TRANSISTOR

    Abstract: IPP066N06N g33 smd 860 IPB066N06N 066N06N PG-TO220-3 IPB070N06N
    Contextual Info: IPB070N06N G OptiMOS Power-Transistor IPP070N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature


    Original     		IPB070N06N IPP070N06N IPB066N06N P-TO263-3-2 P-TO220-3-1 066N06N IPP066N06N DD 127 D TRANSISTOR g33 smd 860 066N06N PG-TO220-3 PDF

    DD 127 D TRANSISTOR

    Abstract: IPB066N06N IPP066N06N g33 smd 860
    Contextual Info: IPB070N06N G IPP070N06N G IPI070N06N G OptiMOS Power-Transistor Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 m: 80 A • 175 °C operating temperature


    Original     		IPB070N06N IPP070N06N IPI070N06N IPB066N06N PG-TO263-3 P-TO263-3-2 PG-TO220-3 DD 127 D TRANSISTOR IPP066N06N g33 smd 860 PDF