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    Infineon Technologies AG BSC066N06NSATMA1

    Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8
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    TME BSC066N06NSATMA1 5,000
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    Avnet Americas BSC066N06NSATMA1 Tape & Reel 52 Weeks 5,000
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    Newark () BSC066N06NSATMA1 Tape & Reel 12,042 100
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    BSC066N06NSATMA1 Cut Tape 12,042 5
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    BSC066N06NSATMA1 Tape & Reel 5,000
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    Rochester Electronics BSC066N06NSATMA1 3,499 1
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    Rutronik BSC066N06NSATMA1 Tape & Reel 5,000 5,000
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    EBV Elektronik BSC066N06NSATMA1 53 Weeks 5,000
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    Win Source Electronics BSC066N06NSATMA1 36,172
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    Infineon Technologies AG BSC066N06NS

    Trans MOSFET N-CH 60V 64A 8-Pin TDSON EP T/R
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    Bristol Electronics BSC066N06NS 72 1
    • 1 $1.69
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    Maritex BSC066N06NS 283 1
    • 1 $0.94
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    Win Source Electronics BSC066N06NS 36,027
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    VBsemi Electronics Co Ltd BSC066N06NS-VB

    MOSFETs; BSC066N06NS-VB; VBSEMI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Maritex BSC066N06NS-VB 49 5
    • 1 $3.10
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    066N06N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IEC61249-2-21

    Abstract: IPB066N06N IPP066N06N C2320
    Contextual Info: IPB070N06N G IPP070N06N G IPI070N06N G OptiMOS Power-Transistor Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature


    Original     		ipb070n06nipp070n06nipi070n06niec61249-2-21+5ipb066n06np-to263-3-2p-to263-3ipp066n06nc2320 PDF

    DD 127 D TRANSISTOR

    Abstract: IPB066N06N IPP066N06N g33 smd 860
    Contextual Info: IPB070N06N G IPP070N06N G IPI070N06N G OptiMOS Power-Transistor Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature


    Original     		ipb070n06nipp070n06nipi070n06nipb066n06n+6p-to263-3p-to263-3-2p-to220-3dd 127 d transistoripp066n06ng33 smd 860 PDF

    Contextual Info: Type 066N06NS OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel 1 • Qualified according to JEDEC for target applications


    Original     		bsc066n06nsiec61249-2-21066n06ns PDF

    DD 127 D TRANSISTOR

    Abstract: IPP066N06N g33 smd 860 IPB066N06N 066N06N PG-TO220-3 IPB070N06N
    Contextual Info: IPB070N06N G OptiMOS Power-Transistor IPP070N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature


    Original     		ipb070n06nipp070n06nipb066n06np-to263-3-2+6p-to220-3-1066n06nipp066n06ndd 127 d transistorg33 smd 860pg-to220-3 PDF

    DD 127 D TRANSISTOR

    Abstract: IPB066N06N IPP066N06N g33 smd 860
    Contextual Info: IPB070N06N G IPP070N06N G IPI070N06N G OptiMOS Power-Transistor Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 m: 80 A • 175 °C operating temperature


    Original     		ipb070n06nipp070n06nipi070n06nipb066n06n+6pg-to263-3p-to263-3-2pg-to220-3dd 127 d transistoripp066n06ng33 smd 860 PDF