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    066N06N Search Results

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    Infineon Technologies AG BSC066N06NSATMA1

    MOSFET N-CH 60V 64A TDSON-8-6
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    DigiKey BSC066N06NSATMA1 Tape & Reel 5,000 5,000
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    Avnet Americas BSC066N06NSATMA1 Tape & Reel 52 Weeks 5,000
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    Mouser Electronics BSC066N06NSATMA1 12,727
    • 1 $1.78
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    Newark () BSC066N06NSATMA1 Cut Tape 15,887 5
    • 1 $1.97
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    BSC066N06NSATMA1 Tape & Reel 5,000
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    Rochester Electronics BSC066N06NSATMA1 2,657 1
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    EBV Elektronik BSC066N06NSATMA1 53 Weeks 5,000
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    Win Source Electronics BSC066N06NSATMA1 36,172
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    Infineon Technologies AG BSC066N06NS

    MOSFETs IFX FET 60V
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    Mouser Electronics BSC066N06NS 13,234
    • 1 $1.85
    • 10 $1.18
    • 100 $0.78
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    Bristol Electronics BSC066N06NS 72 1
    • 1 $1.69
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    Maritex BSC066N06NS 4,999 1
    • 1 $1.15
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    • 100 $0.78
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    Win Source Electronics BSC066N06NS 26,000
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    • 100 $0.65
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    VBsemi Electronics Co Ltd BSC066N06NS-VB

    MOSFETs; BSC066N06NS-VB; VBSEMI
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    Maritex BSC066N06NS-VB 49 5
    • 1 $2.54
    • 10 $0.81
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    066N06N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IEC61249-2-21

    Abstract: IPB066N06N IPP066N06N C2320
    Contextual Info: IPB070N06N G IPP070N06N G IPI070N06N G OptiMOS Power-Transistor Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature


    Original     		IPB070N06N IPP070N06N IPI070N06N IEC61249-2-21 IPB066N06N P-TO263-3-2 P-TO263-3 IEC61249-2-21 IPP066N06N C2320 PDF

    DD 127 D TRANSISTOR

    Abstract: IPB066N06N IPP066N06N g33 smd 860
    Contextual Info: IPB070N06N G IPP070N06N G IPI070N06N G OptiMOS Power-Transistor Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature


    Original     		IPB070N06N IPP070N06N IPI070N06N IPB066N06N P-TO263-3 P-TO263-3-2 P-TO220-3 DD 127 D TRANSISTOR IPP066N06N g33 smd 860 PDF

    Contextual Info: Type 066N06NS OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel 1 • Qualified according to JEDEC for target applications


    Original     		BSC066N06NS IEC61249-2-21 066N06NS PDF

    DD 127 D TRANSISTOR

    Abstract: IPP066N06N g33 smd 860 IPB066N06N 066N06N PG-TO220-3 IPB070N06N
    Contextual Info: IPB070N06N G OptiMOS Power-Transistor IPP070N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature


    Original     		IPB070N06N IPP070N06N IPB066N06N P-TO263-3-2 P-TO220-3-1 066N06N IPP066N06N DD 127 D TRANSISTOR g33 smd 860 066N06N PG-TO220-3 PDF

    DD 127 D TRANSISTOR

    Abstract: IPB066N06N IPP066N06N g33 smd 860
    Contextual Info: IPB070N06N G IPP070N06N G IPI070N06N G OptiMOS Power-Transistor Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 m: 80 A • 175 °C operating temperature


    Original     		IPB070N06N IPP070N06N IPI070N06N IPB066N06N PG-TO263-3 P-TO263-3-2 PG-TO220-3 DD 127 D TRANSISTOR IPP066N06N g33 smd 860 PDF