IEC61249-2-21
Abstract: IPB066N06N IPP066N06N C2320
Contextual Info: IPB070N06N G IPP070N06N G IPI070N06N G OptiMOS Power-Transistor Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature
|
Original
|
IPB070N06N
IPP070N06N
IPI070N06N
IEC61249-2-21
IPB066N06N
P-TO263-3-2
P-TO263-3
IEC61249-2-21
IPP066N06N
C2320
|
PDF
|
DD 127 D TRANSISTOR
Abstract: IPB066N06N IPP066N06N g33 smd 860
Contextual Info: IPB070N06N G IPP070N06N G IPI070N06N G OptiMOS Power-Transistor Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature
|
Original
|
IPB070N06N
IPP070N06N
IPI070N06N
IPB066N06N
P-TO263-3
P-TO263-3-2
P-TO220-3
DD 127 D TRANSISTOR
IPP066N06N
g33 smd 860
|
PDF
|
DD 127 D TRANSISTOR
Abstract: IPP066N06N g33 smd 860 IPB066N06N 066N06N PG-TO220-3 IPB070N06N
Contextual Info: IPB070N06N G OptiMOS Power-Transistor IPP070N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature
|
Original
|
IPB070N06N
IPP070N06N
IPB066N06N
P-TO263-3-2
P-TO220-3-1
066N06N
IPP066N06N
DD 127 D TRANSISTOR
g33 smd 860
066N06N
PG-TO220-3
|
PDF
|
DD 127 D TRANSISTOR
Abstract: IPB066N06N IPP066N06N g33 smd 860
Contextual Info: IPB070N06N G IPP070N06N G IPI070N06N G OptiMOS Power-Transistor Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 6.7 m: 80 A • 175 °C operating temperature
|
Original
|
IPB070N06N
IPP070N06N
IPI070N06N
IPB066N06N
PG-TO263-3
P-TO263-3-2
PG-TO220-3
DD 127 D TRANSISTOR
IPP066N06N
g33 smd 860
|
PDF
|