IPB054N08N3 Search Results
IPB054N08N3 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IPB054N08N3 G | Infineon Technologies | N-Channel MOSFETs (20V - 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 80.0 V; RDS (on) (max) (@10V): 5.4 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 80.0 A; | Original | 529.36KB | 11 | ||
| IPB054N08N3GATMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 80V 80A TO263-3 | Original | 1.01MB |
IPB054N08N3 Price and Stock
Infineon Technologies AG IPB054N08N3GATMA1Transistor: N-MOSFET; unipolar; 80V; 80A; 150W; PG-TO263-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB054N08N3GATMA1 | 1 |
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IPB054N08N3GATMA1 | 53,000 | 278 |
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| IPB054N08N3GATMA1 | 25,000 | 278 |
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| IPB054N08N3GATMA1 | 9,319 | 278 |
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| IPB054N08N3GATMA1 | 7,000 | 1,000 |
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| IPB054N08N3GATMA1 | 939 | 2 |
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| IPB054N08N3GATMA1 | 16 | 14 |
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IPB054N08N3GATMA1 | 7,000 | 16 Weeks | 1,000 |
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| IPB054N08N3GATMA1 | Cut Strips | 939 | 16 Weeks | 1 |
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| IPB054N08N3GATMA1 | Cut Strips | 16 | 99 Weeks | 1 |
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IPB054N08N3GATMA1 | 87,319 | 1 |
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Infineon Technologies AG IPB054N08N3GOPTIMOS 3 POWER-TRANSISTOR Power Field-Effect Transistor, 80A I(D), 80V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB054N08N3G | 482 |
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IPB054N08N3 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G 3 Power-Transistor Product Summary Features Q' 381>>5<>?B=1<<5F5< QH35<<5>D71D5381B75HR 9H"[Z#@B?4E3D & Q.5BI<?G?> B5C9CD1>35R 9H"[Z# V 9H 0( J R ,?>=1H,& |
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marking EB diode
Abstract: Q451 ee 19 8b qg
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ipp057n08n3ipi057n08n3ipb054n08n3marking eb diode+2 | |
057N08N
Abstract: 054N08N ipp06cn08n IEC61249-2-21 PG-TO220-3 IPB054N08N3 G
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057N08N
Abstract: 054n08n DSV80 IPB054N08N3-G ipp06cn08n PG-TO220-3 IPP057N08N3 G IPP057N08N3
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igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
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igbt welding machine schemeikw40n120h3aircon l1smd diode schottky code marking sj+6 | |
3bs02
Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
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infineo866-95b152-h8926-g2-x-7600nb08-10693bs02+9 | |
PX3544
Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
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lead519b152-h9345-g2-x-7600px3544px7510+8 | |
600V igbt dc to dc buck converter
Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
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b192-h6780-g11-x-7600sp000008186vdsl6100i-e600v igbt dc to dc buck converter+9 | |
TLE4957C
Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
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