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Infineon Technologies AG


Infineon Technologies AG IPB054N08N3GATMA1 Transistor: N-MOSFET; unipolar; 80V; 80A; 150W; PG-TO263-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IPB054N08N3GATMA1				1	1 $1.76 10 $1.56 100 $1.30 1000 $1.21 10000 $1.21	Get Quote
Rochester Electronics	IPB054N08N3GATMA1		87,319		1	1 - 10 - 100 $1.08 1000 $0.90 10000 $0.80	Buy Now
Infineon Technologies AG IPB054N08N3G OPTIMOS 3 POWER-TRANSISTOR Power Field-Effect Transistor, 80A I(D), 80V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	IPB054N08N3G		482			1 - 10 - 100 - 1000 - 10000 -	Get Quote

054N08N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
057N08N Abstract: 054N08N ipp06cn08n IEC61249-2-21 PG-TO220-3 IPB054N08N3 G Contextual Info: IPP057N08N3 G IPI057N08N3 G 054N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) V DS 80 V R DS(on),max (SMD) 5.4 mΩ ID 80 A	Original	ipp057n08n3 ipi057n08n3 ipb054n08n3 ipp06cn08n +6iec61249-2-21 pg-to220-3 pg-to262-3 057n08n 054n08n ipb054n08n3 g	PDF
057N08N Abstract: 054n08n DSV80 IPB054N08N3-G ipp06cn08n PG-TO220-3 IPP057N08N3 G IPP057N08N3 Contextual Info: IPP057N08N3 G IPI057N08N3 G 054N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 80 V R DS(on),max (SMD) 5.4 mΩ ID 80 A • Very low on-resistance R DS(on)	Original	ipp057n08n3 ipi057n08n3 ipb054n08n3 ipp06cn08n +8pg-to220-3 pg-to262-3 pg-to263-3 057n08n 054n08n dsv80 ipb054n08n3-g ipp057n08n3 g	PDF

Catalog Datasheet

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Document Tags

PDF

057N08N

Abstract: 054N08N ipp06cn08n IEC61249-2-21 PG-TO220-3 IPB054N08N3 G
Contextual Info: IPP057N08N3 G IPI057N08N3 G 054N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) V DS 80 V R DS(on),max (SMD) 5.4 mΩ ID 80 A

Original

ipp057n08n3 ipi057n08n3 ipb054n08n3 ipp06cn08n +6

PDF

057N08N

Abstract: 054n08n DSV80 IPB054N08N3-G ipp06cn08n PG-TO220-3 IPP057N08N3 G IPP057N08N3
Contextual Info: IPP057N08N3 G IPI057N08N3 G 054N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 80 V R DS(on),max (SMD) 5.4 mΩ ID 80 A • Very low on-resistance R DS(on)

Original

ipp057n08n3 ipi057n08n3 ipb054n08n3 ipp06cn08n +8

PDF

054N08N Search Results

054N08N Price and Stock

Infineon Technologies AG IPB054N08N3GATMA1

Infineon Technologies AG IPB054N08N3G

054N08N Datasheets Context Search

057N08N

057N08N