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    IPB054N08N3-G Search Results

    IPB054N08N3-G Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IPB054N08N3 G
    		Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 80.0 V; RDS (on) (max) (@10V): 5.4 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 80.0 A; Original PDF 529.36KB 11
    IPB054N08N3GATMA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 80V 80A TO263-3 Original PDF 1.01MB
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    IPB054N08N3-G Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPB054N08N3GATMA1

    MOSFET N-CH 80V 80A D2PAK
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    Infineon Technologies AG IPB054N08N3G

    OPTIMOS 3 POWER-TRANSISTOR Power Field-Effect Transistor, 80A I(D), 80V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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    ComSIT USA IPB054N08N3G 482
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