IDT6198 Search Results

Contextual Info: CM O S STATIC RAM 6 4 K 1 6 K x 4-BIT IDT6198S IDT6198L Integrated DeviceTechnolo3 y. Inc FEATURES: DESCRIPTION: • Output Enable (OE) pin available for added system flexibility • High-speed (equal access and cycle times) The IDT6198 is a 65,536-bit high-speed static RAM organized as

Contextual Info: IDT6198S IDT6198L CMOS STATIC RAM 64 K 1 6 K x 4-BIT with Output Control Integrated Device Technology, Inc. FEATURES: n iq u e s , p ro v id e s a c o s t-e ffe c tiv e a p p ro a c h fo r m e m o ry in te n ­ • O utput E nable (O E) pin available fo r added system flexibility

Contextual Info: CMOS STATIC RAM 64K 16Kx 4-BIT with Output Control IDT6198S IDT6198L Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle times) — Military: 20/25/35/45/55/70/85ns (max.) — Commercial: 15/20/25/35ns (max.) • Output Enable (OE) pin available for added system flexibility

Contextual Info: INTEGRATE] DE VI CE 5ÖE D • 40 257 71 OOllbDfl SMI M I D T IDT6198S 1DT6198L CMOS STATIC RAM 64K 16K x 4-BIT) with Output Control Integrated Device Technology, Inc. FEATURES: niques, provides a cost-effective app ro a c h for m em ory in ten­ • O utput E n a b le (O E ) pin a v a ila b le for a d d e d system flexibility

Contextual Info: INTEGRATED DEVICE 4Ö25771 3ÛE D OGGfll^E 4 * I D T *r-Ht- Z 3 - I 0 CMOS STATIC RAM 64K 16K x 4-BIT IDT6198S IDT6198L Integrated Device Technology, Inc. FEATURES: • Produced with advanced CEMOS technology • Bidirectional data inputs and outputs

2987

Abstract: IDT6198L IDT6198S IDT79R3000 L282
Contextual Info:  IDT6198S IDT6198L CMOS STATIC RAM 64K 16K x 4-BIT with Output Control Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle times) — Military: 20/25/35/45/55/70/85ns (max.) — Commercial: 15/20/25/35ns (max.) • Output Enable (OE) pin available for added system flexibility

Contextual Info: CMOS STATIC RAM 64K 16Kx 4-BIT IDT6198S IDT6198L Integrated Device Technology, Inc. FEATURES: • Produced with advanced CEMOS technology • Bidirectional data inputs and outputs • Military product compliant to MIL-STD-883, Class B • Optimized for fast RISC processors including the

Contextual Info: CMOS STATIC RAM 64K 16Kx 4-BIT IDT6198S IDT6198L Integrated D evice T echnology, Inc. • Produced with advanced CEMOS technology • Bidirectional data inputs and outputs • Military product compliant to MIL-STD-883, Class B FEATURES: • Optimized for fast RISC processors including the

Contextual Info: CMOS STATIC RAM 6 4 K 1 6 K x 4-BIT with Output Control FEATURES: _ IDT6198S IDT6198L niques, provides a cost-effective approach for m em ory inte n­ sive applications. T im ing p a ram e ters have been specified to m eet the speed dem ands of the ID T79R 3000 RISC proces­

CXK5465P-25L

Abstract: CXK5465P-30L CXK5465P-35L CY7C166-20 CY7C166-25 CY7C166-35 CY7C166-45 HM6289JP-25 Hitachi Scans-001
Contextual Info: 75 6 4 K CMOS S t a t i c RAM X A -y * V ? ft ft m & ít £ CC> TAAC max ns TCAC max (ns) TOE (ns) TOH TWP (ns) TOD max (ns) (ns) TDS (1 6 3 8 4 x 4 ) TDH TWD (ns) (ns) (ns) TWR max (ns) VD D o • VCC 2 4 P I N 6 4 E 4 m m I DD aax (mA) A I DD STANDBY ( I S B / 1 SB2)

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

TAG D2

Abstract: TAG D3 TAG 85 22 TAG 88 tag 89 TAG D7
Contextual Info: PRODUCT PROPOSAL IDT7MP6059 64K BYTE CACHE MODULE Integrated Device Technology* Inc. PIN CONFIGURATION FEATURES: • • • • High density 64K byte cache with tag Low profile 90 pin ZIP zig-zag in-line vertical package Fast access time: 15ns (max.) Surface mounted plastic components on an epoxy

STATIC RAM 8464

Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
Contextual Info: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)

S475

Contextual Info: Idt IntegratedDeviceTechnoiogyInc CM O S STATIC RAM 64K 1 6 K x 4-BIT) FEATURES: • • • • O p tim ize d fo r fast RISC p ro ce sso rs in c lu d in g th e IDT79R3000 O u tp u t E nable (OE) p in a vaila ble fo r a d d e d system fle xib ility H ig h -spe e d (equal a ccess and c y c le tim es)

74S474

Abstract: 16kx4 Y242 s476
Contextual Info: 14E D INTEGRATE» DEVICE • 4Ö25771 0003334 b U * 1dt Integrated Devlcelèchnolosy Inc CMOS STATIC RAM 6 4K 16 K x 4-BIT) FEATURES: • Optim ized for fast RISC processors Including the IDT79R3000 • Output Enable (OE) pin available for added system flexibility

mcm2018a

Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

TC55B4257

Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264

Contextual Info: INTEGRATED DEVICE m 3ÔE D 4Ô2S771 0007550 3 • IDT *T=M6.'23-3’764K BYTE CACHE MODULE FOR THE MC68030 MICROPROCESSOR PRODUCT PROPOSAL IDT7MP603Q Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 64K byte unified cache data and tag

cache ram 64k x 8

Contextual Info: 64K BYTE CACHE MODULE FOR THE MC68030 MICROPROCESSOR PRODUCT PROPOSAL IDT7MP6030 Integrated Devlcc Technology, Inc. FEATURES: DESCRIPTION: • High density 64K byte unified cache data and tag module • 50MHz MC68030 operation • 64K bytes with 16 byte line size

MT5C2568

Abstract: 16kx4 8833 256kx1 IDT7188 41024 84256 CY7C PDM41024 EDI88130
Contextual Info: SRAM FUNCTIONAL CROSS REFERENCE GUIDE NOTE: This guide reflects functional correlation only. Refer to individual data sheets to ensure that the device meets your requirements. CYPRESS AUSTIN DESCRIPTION IDT AUSTIN DESCRIPTION CY7C 106 MT5C1005 256Kx40E IDT61298

XA29

Contextual Info: Integrated Device Technology, Inc. CMOS STATIC RAM 6 4 K 16K x 4-BIT with Output Control FEATURES: • High-speed (equal access and cycle times) — Military: 20/25/35/45/55/70/85ns (max.) — Commercial: 15/20/25/35ns (max.) • Output E nable (OE) pin available for added system flexibility

sun hold RAS 0610

Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

IDT CYPRESS CROSS REFERENCE

Abstract: CY7C
Contextual Info: ^ A I S M N SI M 1 C Ü M H t I OR. I NC. C ROSS R E F E R ^ ^ e 'g UIDE SRAM FUNCTIONAL CROSS REFERENCE GUIDE NOTE: This guide reflects functional correlation only. Refer to individual data sheets to ensure that the device meets your requirements. DESCRIPTION