L282 Search Results

L2821

Contextual Info: polyfet rf devices L2821 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

TB146

Abstract: L2821 Z4 51
Contextual Info: TB-146 Pin vs Pout Freq=850MHz Vds=12.5Vdc Idq=.4A 8 12.0 P1dB=4W 6 Pout 11.0 Gain 10.0 4 2 Efficiency = 45% 9.0 0.2 0.4 0.6 0.8 1 Pin in Watts TB146, L2821; Vds=12.5Vdc Idq=.8A, 850MHz -27 -31 -35 -39 -43 -47 -51 -55 -59 -63 -67 -71 -75 3rd Order 5th Order

Contextual Info: polyfet rf devices L2821 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: polyfet rf devices L2821 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: polyfet rf devices L2821 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: polyfet rf devices L2821 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

b16 zener

Abstract: zener diode c5 C61NF transistor Z2 zener c2 10KPOT 20pf B16 diode C710 zener z2
Contextual Info: RFin C1 7.5PF 1 3 turns C2 20PF L1 22AWG 2 C31NF 3 Gendiode R6 10K 10KPot 1/2turn L2 22AWG 16 14 Zener Gendiode 15 4 8 12 L2821 R1180 5 9 22ohm 1/2W R43.9K 7 6 C61NF 4/10/01 C5 9.1PF 1/2turn L322AWG 22AWG 12turns C710NF 850mu terroid C847UF,25V C4 10NF 11

L2821

Contextual Info: polyfet rf devices L2821 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

Contextual Info: CMOS STATIC RAM 256K 32K x 8-BIT IDT71256S IDT71256L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed address/chip select time — Military: 25 /30/3 5/45 /5 5 /7 0 /8 5 /1 0 0 /1 2 0 /1 50ns (max.) — Commercial: 20/25/35/45ns (max.)

IDT71256

Abstract: IDT71256L IDT71256S P28-2
Contextual Info: CMOS STATIC RAM 256K 32K x 8-BIT IDT71256S IDT71256L In te g ra te d D evice T echnology, Inc. FEATURES: • High-speed address/chip select time — Military: 2 5 /3 0 /3 5 /4 5 /5 5 /7 0 /8 5 /1 0 0 /1 2 0 /1 50ns (max.) — Commercial: 2 0 /25/3 5/45 n s (m ax.)

AM29800

Abstract: SO24-2 d794
Contextual Info: IDT54/74FCT827A/B/C HIGH PERFORMANCE CMOS BUFFER MILITARY AND COMMERCIAL TEMPERATURE RANGES HIGH PERFORMANCE CMOS BUFFER IDT54/74FCT827A/B/C FEATURES: DESCRIPTION: − − The IDT54/74FCT800 series is built using an advanced dual metal CMOS technology. −

Contextual Info: 256MB, 512MB, 1GB Registered DIMM Preliminary DDR SDRAM DDR SDRAM Registered Module 184pin Registered Module based on 256Mb E-die x4, x8 with 1,700 / 1,200mil Height & 72-bit ECC Revision 0.0 Feb. 2003 Rev. 0.0 Feb. 2003 256MB, 512MB, 1GB Registered DIMM

Contextual Info: 256MB, 512MB, 1GB Registered DIMM DDR SDRAM DDR SDRAM Registered Module 184pin Registered Module based on 256Mb E-die x4, x8 with 1,700 / 1,200mil Height & 72-bit ECC Revision 1.0 April. 2003 Rev. 1.0 April. 2003 256MB, 512MB, 1GB Registered DIMM DDR SDRAM

CERAMIC LEADLESS CHIP CARRIER

Abstract: IDT7198L IDT7198S
Contextual Info:  IDT7198S IDT7198L CMOS STATIC RAMs 64K 16K x 4-BIT Added Chip Select and Output Controls Integrated Device Technology, Inc. nized as 16K x 4. It is fabricated using IDT’s high-performance, high-reliability technology—CMOS. This state-of-theart technology, combined with innovative circuit design techniques, provides a cost effective approach for memory intensive applications.

WS80a

Abstract: b25353 siemens SPC 4320 C3227* transistor b25353-k1118-k4 siemens matsushita kondensator B25834-K6106-K9 K4106 V245 datenbuch
Contextual Info: Inhaltsverzeichnis Anwendungen- und Bauformen-Übersicht Seite 5 9 Anwendungen Kondensator-Fragebogen 17 20 Allgemeine technische Angaben 23 Angaben zur Qualität 55 Gleichspannungs-Kondensatoren 63 Wechselspannungs-Kondensatoren 163 Kondensator-Befestigungen

L268N

Abstract: L2-82N L2-R12
Contextual Info: FERRITE CHIP INDUCTORS L2 SERIES 1. PART NO. EXPRESSION : L2-47NK-10 a Series code (a) (b) Inductance code : 47N = 0.047uH (b) (c) (d) (d) : 10 : RoHS Compliant 11 ~ 99 : Internal controlled number (c) Tolerance code : K = ±10%, M = ±20% 2. CONFIGURATION & DIMENSIONS :

Contextual Info: Integrated Products 1 For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.

282YD

Abstract: L282
Contextual Info: KINGBRIGHT ELECTRONIC .r>Jikr9 ETE » \~ s K S l ci7DD4 OODGOflS 3 • mm Kingbright Electronic Co., Ltd. Mail Address : P. 0. Bo* 81-153 Taipei, Taiwan c,bl# Address: "TWNKIN" Taipei Telex No. Telephones : 22249 TWNKIN 1.9mm TWO HEAD LED LAMP LA/ ~ r ~ L ± l - ¿ ¿ 'S

SO24-2

Contextual Info: IDT54/74FCT823A/B/C HIGH PERFORMANCE CMOS BUS INTERFACE REGISTER MILITARY AND COMMERCIAL TEMPERATURE RANGES IDT54/74FCT823A/B/C HIGH PERFORMANCE CMOS BUS INTERFACE REGISTER FEATURES: DESCRIPTION: − The FCT823 series is built using an advanced dual metal CMOS

L1144

Abstract: l0728 l0312 L0936 l0832 L1248 l2904 L4516 L7940 L0624
Contextual Info: ˆABEL 5.02 Data I/O Corp. JEDEC file for: MACH220A V1.3 Created on: Tue Oct 24 14:16:42 1995 PLX TECHNOLOGY PROPRIETARY INFORMATION BUSCTL: Local Bus Control MACH Engineer: DLR Product: PCI MPEG Board Part Number: xxx-xxxx-xxxx Revision 3.0 10-20-95 Copyright PLX Technology, 1995

L1239

Abstract: l0728 l0312 SGS L282 L0936 L11616 L9960 0x00000404 L1198 L1322
Contextual Info: Go to next Section: PCI to Local Bridge Performance Study Return to Table of Contents Using the PCI 9060 without a CPU SGS Thomson MPEG with PCI 9060 PCI 9060/MPEG AN January 14, 1996 MPEG to PCI bus Application Note _ _ _

Contextual Info: CMOS STATIC RAM 256K 64K x 4-BIT PRELIMINARY IDT61298SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 4 high-speed static RAM • Fast Output Enable (OE) pin available for added system flexibility • High speed (equal access and cycle times)

2S701

Abstract: ATA 2388 IC ATA 2388 2L85 719b1
Contextual Info: CMOS STATIC RAMs 64K 16Kx 4-BIT IDT71981S/L IDT71982S/L Separate Data Inputs and Outputs Integrated Device Technology, Inc. FEATURES: • • • • • • • • • • Separate data inputs and outputs IDT71981S/L: outputs track inputs during write mode

Contextual Info: CMOS STATIC RAM 64K 64K x 1-BIT IDT7187S IDT7187L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High speed (equal access and cycle time) — Military: 20/25/35/45/55/70/85ns (max.) — Commercial: 15/20/25/35ns (max.) The IDT7187 is a 65,536-bit high-speed static RAM