HER802 Search Results

Contextual Info: HIGH EFFICIENCY RECTIFIERS 8.0 16 TO-220A T0-220 lo CA ) PACKAGE II \ OUTLINE \ mm/Typ.) V rrm \ (V o l ts) 50 100 200 300 400 iv S tt.) If C»A> S > 1m <A) Tï» . ,(.n ai._ 1 \ HER801 HER1601C HER802 HER1602C HER803 HER1603C HER804 HER1604C HER805

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

diode cross reference

Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Contextual Info: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS

HER801S

Abstract: HER802S HER803S HER804S HER805S
Contextual Info: HER801S RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION HER805S HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes FEATURES Low switching noise Low forward voltage drop Low thermal resistance High current capability High fast switching capability

Contextual Info: HER801 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION HER805 HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes FEATURES * * * * * * Low switching noise Low forward voltage drop Low thermal resistance High current capability High fast switching capability

equivalent components of diode her207

Abstract: her158 HER1605PT her1603g HER101 HER102 HER103 HER104 HER105 HER106
Contextual Info: HIGH EFFICIENCY RECTIFIERS SENSITRON SEMICONDUCTOR OPERATING AND STORAGE TEMPERATURE –65°C TO +150°C TYPE Maximum Peak Reverse Voltage PRV VPK Maximum Average Rectified Current @Half-Wave Resistive Load 60Hz Io @ T A AAV °C Maximum Forward Peak Surge Current

IN6817

Abstract: IN5822 SR5045 sr560 HER207 iN6818 in6819 SFa5 SR540 IN5818
Contextual Info: RECTRON LT» 24E D • T ~ 0 l-0 f 7blOS45 0D000G5 S ■ SCHOTTKY BARRIER RECTIFIERS O PERATIN G TEM P ER A T U R E RANGE 20V to 45V: -6 5 ° C to +125°C, 50V to 60V: -6 5 °C to +150' STO RAG E TEM P ER A T U R E -6 5 °C to +150°G TYPE Maximum Peak Reverse

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

Contextual Info: HER801 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION HER805 HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes FEATURES * * * * * * Low switching noise Low forward voltage drop Low thermal resistance High current capability High fast switching capability

HER804

Abstract: HER801 HER802 HER803 HER805
Contextual Info: HER801 thru HER805 REVERSE VOLTAGE FORWARD CURRENT HIGH EFFICIENCY RECTIFIERS -50 to 400 Volts -8.0 Amperes TO-220A FEATURES • Low switching noise .187 4 . 7 • Low forward voltage drop . 1 5 3 ( 3 .9 ) • Low thermal resistance • 48 <3 8) • High current capability

HER801

Abstract: HER804 C8050 HER802 HER803 HER806
Contextual Info: I n ter n a tio n a l HER801 thru HER806 S e m ic o n d u c to r , I n c . GLASS PASSIVATED HIGH EFFICIENCY RECTIFIERS VOLTAGE - 50 TO 600 Volts CURRENT - 8.0 Ampere FEATURES MECHANICAL DATA • P la stic P ackage c a rrie s U n d e rw rite rs L a b o ra to ry

230PI

Contextual Info: CS RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE-50 to 400 Volts CURRENT-8.0 Amperes FEATURES * Low sw itching noise * Low forward voltage drop * Low thermal resistance * High current capability * High fast sw itching capability

B101S

Abstract: B2510 MVM12 br68 204 RL1N4004 HS607
Contextual Info: ALPHABETICAL INDEX PAGE PA R TS PAGE PA RTS NO. NO. NO. NO. PAGE PA RTS NO. NO. IW. . 102 1N4942G . 192 B R 1010 . 166 06102S . . 102 1N4944 . 80 B R 102 . 166

HER804

Abstract: HER801 HER802 HER803 HER805
Contextual Info: HER801 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION HER805 HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes FEATURES * * * * * * Low switching noise Low forward voltage drop Low thermal resistance High current capability High fast switching capability

Contextual Info: HER801K THRU HER805K HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes FEATURES Low switching noise Low forward voltage drop Low thermal resistance High current capability High fast switching capability High surge capability MECHANICAL DATA

HER1601

Abstract: HER1602 HER1603 HER801 HER802 HER803 HER804 HER805
Contextual Info: DIODES INC 3BE D • 0000343 T « D I I HIGH EFFICIENCY RECTIFIERS 7 OPERATING/STORAGE TEMPERATURE RANGE -65°C to +150°C TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz PRV lo @ Tc V PK aAv Maximum Forward Maximum Reverse

HER801

Abstract: HER802 HER803 HER804 HER805 HER805P
Contextual Info: HER801 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION HER805 HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes FEATURES * * * * * * Low switching noise Low forward voltage drop Low thermal resistance High current capability High fast switching capability

RS407L

Abstract: fr104 FR307 SR340 Schottky her1603 diode RS405L KBPC25005 RS405L bridge rectifier SCHOTTKY HER157 1n4007 DO-15 SR830* DO-27
Contextual Info: SCHOTTKY BARRIER RECTIFIERS SCHOTTKY BARRIER RECTIFIERS 20 30 35 40 45 50 60 80 100 CASE 1.0 1N5817 1N5818 - 1N5819 - - - - - DO-41 1.0 SR120 SR130 - SR140 - SR150 SR160 SR180 SR1100 DO-41 2.0 SR220 SR230 - SR240 - SR250

HER801T

Abstract: HER802T HER803T HER804T
Contextual Info: HER801T thru HER806T REVERSE VOLTAGE FORWARD CURRENT GLASS HIGH EFFICIENCY RECTIFIERS - 50 to 600Volts - 8.0 Amperes TO-220AC FEATURES ●Low switching noise .108 2.75 ●Low forward voltage drop .187(4.7) .148(3.8) .055(1.4) .047(1.2) .153(3.9) .146(3.7)

MDA2501

Abstract: pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1
Contextual Info: DIOTEC ELECTRONICS CORP SflE D • Sfl^lG? ÜDOOlfl^ bTT WÊDIX Appendix IV: Cross Reference Tables <x^o\ _oZ_ SCHOTTKY BARRIER DIODES: INDUSTRY PART NO. 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 1N5823 1N5824 1N5825 MBR1035 MBR1045 MBR1050 MBR1060 MBR1090

IN5822 diode

Abstract: diode IN5822 6A60 diode 6A100 diode IN5822 IN5820 Zener 6A10 DIODE ct 58340 diode ct 2A05 diode zener fr303
Contextual Info: R F ELECTRONICS INC tè i 7 4 ^ 3 1 ^ DDOGODa Ö EME D T -//- o f P Ö ^ e M H IG H V O LTA G IS ZEPJE& _' V-• . , '•i'x'-'-'. á?^ityatf-».'> a !>i‘~ .^ V ¿V ,~-“ r¿ l*»irif»ii<-'i«t-‘ - SILICON RECTIFIERS Fof Glass Passivated add " G ” to Part No.