HER805 Search Results

HER801S

Abstract: HER802S HER803S HER804S HER805S
Contextual Info: HER801S RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION HER805S HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes FEATURES Low switching noise Low forward voltage drop Low thermal resistance High current capability High fast switching capability

HER801

Abstract: HER805
Contextual Info: HER801 THRU HER805 HIGH EFFICIENCY RECTIFIER FEATURES VOLTAGE RANGE CURRENT Low power loss,high efiiciency. 50 to 400Volts 8.0 Amperes .190 MAX 4.82 Low leakage. .401(10.2) .386(9.8) High speed switching. TO-220A _ 0.1 3.8 + .130(3.3) .100(2.54) High temperature soldering guaranteed:

Contextual Info: HER801 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION HER805 HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes FEATURES * * * * * * Low switching noise Low forward voltage drop Low thermal resistance High current capability High fast switching capability

Contextual Info: HER801 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION HER805 HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes FEATURES * * * * * * Low switching noise Low forward voltage drop Low thermal resistance High current capability High fast switching capability

HER804

Abstract: HER801 HER802 HER803 HER805
Contextual Info: HER801 thru HER805 REVERSE VOLTAGE FORWARD CURRENT HIGH EFFICIENCY RECTIFIERS -50 to 400 Volts -8.0 Amperes TO-220A FEATURES • Low switching noise .187 4 . 7 • Low forward voltage drop . 1 5 3 ( 3 .9 ) • Low thermal resistance • 48 <3 8) • High current capability

HER804

Abstract: HER801 HER802 HER803 HER805
Contextual Info: HER801 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION HER805 HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes FEATURES * * * * * * Low switching noise Low forward voltage drop Low thermal resistance High current capability High fast switching capability

Contextual Info: HER801K THRU HER805K HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes FEATURES Low switching noise Low forward voltage drop Low thermal resistance High current capability High fast switching capability High surge capability MECHANICAL DATA

HER801

Abstract: HER802 HER803 HER804 HER805 HER805P
Contextual Info: HER801 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION HER805 HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes FEATURES * * * * * * Low switching noise Low forward voltage drop Low thermal resistance High current capability High fast switching capability

Contextual Info: HER801S RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION HER805S HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes FEATURES Low switching noise Low forward voltage drop Low thermal resistance High current capability High fast switching capability

Contextual Info: HER801K THRU HER805K HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes FEATURES Low switching noise Low forward voltage drop Low thermal resistance High current capability High fast switching capability High surge capability MECHANICAL DATA

Contextual Info: HIGH EFFICIENCY RECTIFIERS 8.0 16 TO-220A T0-220 lo CA ) PACKAGE II \ OUTLINE \ mm/Typ.) V rrm \ (V o l ts) 50 100 200 300 400 iv S tt.) If C»A> S > 1m <A) Tï» . ,(.n ai._ 1 \ HER801 HER1601C HER802 HER1602C HER803 HER1603C HER804 HER1604C HER805

HER801S

Abstract: HER802S HER803S HER804S HER805PS HER805S
Contextual Info: HER801S RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION HER805S HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes FEATURES Low switching noise Low forward voltage drop Low thermal resistance High current capability High fast switching capability

Contextual Info: HER801 C RECTROni THRU SEMICONDUCTOR TECHNICAL SPECIFICATION HER805 HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE-50 to 400 Volts CURRENT S.0 Amperes FEATURES * Low sw itching noise * Low forw ard voltage drop * Low therm al resistance * High current capability

Contextual Info: HER801K THRU HER805K HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes FEATURES Low switching noise Low forward voltage drop Low thermal resistance High current capability High fast switching capability High surge capability .024 0.6

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

diode cross reference

Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Contextual Info: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS

equivalent components of diode her207

Abstract: her158 HER1605PT her1603g HER101 HER102 HER103 HER104 HER105 HER106
Contextual Info: HIGH EFFICIENCY RECTIFIERS SENSITRON SEMICONDUCTOR OPERATING AND STORAGE TEMPERATURE –65°C TO +150°C TYPE Maximum Peak Reverse Voltage PRV VPK Maximum Average Rectified Current @Half-Wave Resistive Load 60Hz Io @ T A AAV °C Maximum Forward Peak Surge Current

Contextual Info: WILLAS FM120-M+ HER801 THRU THRU 8.0A HIGH EFFICIENCY RECTIFIERS - 50V-1000V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V TO-220A PACKAGE FM1200-M+ HER808 Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers

Contextual Info: HER801 thru HER808 REVERSE VOLTAGE FORWARD CURRENT HIGH EFFICIENCY GLASS PASSIVATED RECTIFIERS - 50 to 1000Volts - 8.0 Amperes TO-220AC FEATURES ●Low switching noise .135 3.44 .103 (2.62) ●Low forward voltage drop ●Low thermal resistance .189(4.8) .173(4.4)

IN6817

Abstract: IN5822 SR5045 sr560 HER207 iN6818 in6819 SFa5 SR540 IN5818
Contextual Info: RECTRON LT» 24E D • T ~ 0 l-0 f 7blOS45 0D000G5 S ■ SCHOTTKY BARRIER RECTIFIERS O PERATIN G TEM P ER A T U R E RANGE 20V to 45V: -6 5 ° C to +125°C, 50V to 60V: -6 5 °C to +150' STO RAG E TEM P ER A T U R E -6 5 °C to +150°G TYPE Maximum Peak Reverse

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced