FPD3000 Search Results

FPD3000 Functional Equivalents (1)

The Functional Equivalents tab will give you options that are likely to match the same function of FPD3000, but it may not fit your design.

Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number	Manufacturer	Composite Price	Description
FPD3000SOT89	RF Micro Devices Inc	Check for Price	RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET

FPD3000 Datasheets (5)

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Filtronic

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FPD3000	Filtronic	2w Power pHEMT	Original	PDF	185.25KB	2
FPD3000P100	Filtronic	2w Packaged Power pHEMT	Original	PDF	183.89KB	3
FPD3000SOT89	Filtronic	Low Noise High Linearity Packaged pHEMT	Original	PDF	399.44KB	8
FPD3000SOT89E	Filtronic	LOW NOISE HIGH LINEARITY PACKAGED PHEMT	Original	PDF	429.48KB	7
FPD3000SOT89E-BB	Filtronic	LOW NOISE HIGH LINEARITY PACKAGED PHEMT	Original	PDF	429.5KB	7

FPD3000 Price and Stock

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Omega Engineering FPD3000-D FPD3000-D
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FPD3000-D	Bulk			1	1 $1563.15 10 $1563.15 100 $1563.15 1000 $1563.15 10000 $1563.15	Buy Now
Omega Engineering FPD3000-D-A FPD3000-D-A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FPD3000-D-A	Bulk			1	1 $2292.06 10 $2292.06 100 $2292.06 1000 $2292.06 10000 $2292.06	Buy Now
Newark	FPD3000-D-A	Bulk			1	1 $1860.44 10 $1860.44 100 $1860.44 1000 $1860.44 10000 $1860.44	Buy Now
Omega Engineering FPD3000-PULSER FPD3000-PULSER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FPD3000-PULSER	Bulk			14	1 - 10 - 100 $189.85 1000 $189.85 10000 $189.85	Buy Now
Newark	FPD3000-PULSER	Bulk			1	1 $154.10 10 $154.10 100 $154.10 1000 $154.10 10000 $154.10	Buy Now
RF Micro Devices Inc FPD3000SOT89E LOW NOISE HIGH LINEARITY PACKAGED PHEMT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	FPD3000SOT89E		4,500			1 - 10 - 100 $1.70 1000 $1.43 10000 $1.43	Buy Now

FPD3000 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
0603 footprint IPC Abstract: FPD3000 TRANSISTOR BC 157 FPD3000SOT89 FPD3000SOT89E Contextual Info: FPD3000SOT89 FPD3000SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky	Original	FPD3000SOT89 FPD3000SOT8 30dBm 45dBm FPD3000SOT89 25mx1500m FPD3000SOT89E: FPD3000SOT89CE-BD FPD3000SOT89CE-BE FPD3000SOT89CE-BG 0603 footprint IPC FPD3000 TRANSISTOR BC 157 FPD3000SOT89E	PDF
FPD3000 Abstract: MIL-HDBK-263 Contextual Info: FPD3000 FPD30002W Power pHEMT 2W POWER pHEMT Package Style: Bare Die Product Description Features The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx3000μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes	Original	FPD3000 FPD30002W FPD3000 25mx3000m 12GHz 42dBm FPD3000-000 MIL-HDBK-263	PDF
Contextual Info: FPD3000 FPD30002W Power pHEMT 2W POWER pHEMT Package Style: Bare Die Product Description Features The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx3000μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes	Original	FPD3000 FPD30002W FPD3000 mx3000Î 12GHz 42dBm FPD3000-000	PDF
Contextual Info: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25m x 3000m	Original	FPD3000SOT89CE FPD3000SOT8 FPD3000SOT89CE 30dBm FPD3000SOT89CESQ FPD3000SOT89CESR FPD3000SOT89PCK DS111103 85GHz	PDF
Contextual Info: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25Pm x 3000Pm	Original	FPD3000SOT89CE FPD3000SOT8 FPD3000SOT89CE 3000Pm FPD3000SOT89CESQ FPD3000SOT89PCK 85GHz FPD3000SOT89CESR DS111103	PDF
FPD3000 Abstract: 9809E DSA002831 Contextual Info: FPD3000 TOM3 and TOM2 Models 27/01/2005 Modelling Report FPD3000 TOM3 and TOM2 Models Version 1.0 - Device Design and Modelling Group Filtronic Compound Semiconductor Ltd. 1 FPD3000 TOM3 and TOM2 Models 27/01/2005 Introduction This report describes the models for the FPD3000 discrete p-HEMT device. The	Original	FPD3000 allows2005 18GHz 9809E DSA002831	PDF
FPD3000SOT89 Contextual Info: EB3000SOT89BA FPD3000SOT89 1.85GHz PA EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured @ 1.85GHz 31dBm Output Power 12dB Gain 0.9dB Noise Figure 43dBm OIP3 Bias 5V, 400mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively	Original	EB3000SOT89BA FPD3000SOT89 85GHz 85GHz 31dBm 43dBm 400mA 85GHz. FPD3000SOT89; 3000m	PDF
FPD3000SOT89 Contextual Info: EB3000SOT89BB FPD3000SOT89 0.9GHz EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured @ 1.85GHz 30dBm Output Power 18dB Gain 1.2dB Noise Figure 41dBm OIP3 @ 22dBm Pout Total Power Bias 5V, 400mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively	Original	EB3000SOT89BB FPD3000SOT89 85GHz 30dBm 41dBm 22dBm 400mA FPD3000SOT89; 3000m 30mil	PDF
fpd3000 Abstract: 3024D FPD3000SOT89 Contextual Info: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25m x 3000m	Original	FPD3000SOT8 FPD3000SOT89CE FPD3000SOT89CE 3000m 30dBm 45dBm FPD3000SOT89CE: FPD3000SOT89CESQ FPD3000SOT89CESR fpd3000 3024D FPD3000SOT89	PDF
Contextual Info: FPD3000 2W POWER PHEMT Datasheet v2.1 FEATURES: • • • • • LAYOUT: 32.5 dBm Linear O/p Power at 12 GHz 6.5 dB Power Gain at 12 GHz 8 dB Maximum Stable Gain at 12 GHz 42 dBm Output IP3 30% Power-Added Efficiency GENERAL DESCRIPTION: The FPD3000 is	Original	FPD3000 FPD3000 22A114. MIL-STD-1686 MIL-HDBK-263.	PDF
FPD3000 Abstract: transistor A114 Contextual Info: FPD3000 Datasheet v3.0 2W POWER PHEMT LAYOUT: FEATURES: • • • • • 32.5 dBm Linear O/p Power at 12 GHz 6.5 dB Power Gain at 12 GHz 8 dB Maximum Stable Gain at 12 GHz 42 dBm Output IP3 30% Power-Added Efficiency GENERAL DESCRIPTION: The FPD3000 is	Original	FPD3000 FPD3000 22-A114. MIL-STD-1686 MILHDBK-263. transistor A114	PDF
TRANSISTOR BC 298 Abstract: bc 2878 transistor transistor BC 568 FPD3000SOT89 FPD3000SOT89E transistor BC 8050 bc 2878 fpd3000 bd 8050 TRANSISTOR Contextual Info: FPD3000SOT89 Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 30 dBm Output Power (P1dB) 13 dB Small-Signal Gain (SSG) 1.3 dB Noise Figure 45 dBm Output IP3 45% Power-Added Efficiency FPD3000SOT89E: RoHS compliant	Original	FPD3000SOT89 1850MHZ) FPD3000SOT89E: 2002/95/EC) FPD3000SOT89 FPD3000SOT89E 22-A114. J-STD-020C, TRANSISTOR BC 298 bc 2878 transistor transistor BC 568 FPD3000SOT89E transistor BC 8050 bc 2878 fpd3000 bd 8050 TRANSISTOR	PDF
FPD3000SOT89 Abstract: FPD3000SOT89E InGaAs hemt biasing Contextual Info: FPD3000SOT89E FPD3000SOT8 9E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89E is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm	Original	FPD3000SOT89E FPD3000SOT8 FPD3000SOT89E 25mx1500m FPD3000SOT89E: FPD3000SOT89PCK FPD3000SOT89ESQ DS100630 FPD3000SOT89 InGaAs hemt biasing	PDF
FPD3000SOT89E Abstract: FPD3000SOT89CE FPD3000SOT89 micro transistor 1203 EB3000SOT89-BC Contextual Info: FPD3000SOT89 FPD3000SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky	Original	FPD3000SOT89 FPD3000SOT8 30dBm 45dBm FPD3000SOT89 25mx1500m FPD3000SOT89E: FPD3000SOT89CE EB3000SOT89-BC FPD3000SOT89E FPD3000SOT89CE micro transistor 1203 EB3000SOT89-BC	PDF

FPD3000SOT89 Abstract: 9421 Contextual Info: EB3000SOT89BC FPD3000SOT89 2.0GHz PA EVALUATION BOARD FEATURES Frequency GHz P1dB (dBm) SSG (dB) N.F. (dB) OIP3 (dBm) Bias 2.0 2.2 29.5 29.0 12.0 11.5 0.9 0.9 43.5 43.0 5V, 400mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively	Original	EB3000SOT89BC FPD3000SOT89 400mA FPD3000SOT89; 3000m 30mil 31mil 9421	PDF
FPD3000 Abstract: FPD3000SOT89 FPD3000SOT89E MIL-HDBK-263 0J-60 Contextual Info: FPD3000SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE 1850 MHz ♦ 30 dBm Output Power (P1dB) ♦ 13 dB Small-Signal Gain (SSG) ♦ 1.3 dB Noise Figure ♦ 45 dBm Output IP3 ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Available in Lead Free Finish: FPD3000SOT89E	Original	FPD3000SOT89 FPD3000SOT89E FPD3000SOT89 FPD3000 FPD3000SOT89E MIL-HDBK-263 0J-60	PDF
FPD3000P100 Contextual Info: FPD3000P100 2W PACKAGED POWER PHEMT • FEATURES ♦ 32.5 dBm Linear Output Power ♦ 17 dB Power Gain at 2 GHz ♦ 9.5 dB Maximum Stable Gain at 10 GHz ♦ 42 dBm Output IP3 ♦ 45% Power-Added Efficiency at 2 GHz • DESCRIPTION AND APPLICATIONS The FPD3000P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility	Original	FPD3000P100 FPD3000P100	PDF
Contextual Info: FPD3000 FPD30002W Power pHEMT 2W POWER pHEMT 0.47mmx0.83mm Die Product Description Features The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx3000μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes	Original	FPD3000 FPD30002W 47mmx0 FPD3000 mx3000Î 12GHz 42dBm	PDF
2.4GHz amplifier schematic Abstract: FPD3000 transistor 2.4GHz amplifier schematic FPD3000SOT89 Contextual Info: EB3000SOT89BE FPD3000SOT89 2.4GHz PA EVALUATION BOARD DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively matched at a frequency of 2.4 to 2.6GHz. The active device is a FPD3000SOT89 3000 m gate periphery PHEMT. The connectors are SMA jacks soldered to a 30mil	Original	EB3000SOT89BE FPD3000SOT89 FPD3000SOT89 3000m 30mil 2.4GHz amplifier schematic FPD3000 transistor 2.4GHz amplifier schematic	PDF
FPD3000 Abstract: MIL-HDBK-263 P100 Au Sn eutectic Contextual Info: FPD3000 2W POWER PHEMT • FEATURES ♦ 32.5 dBm Linear Output Power at 12 GHz ♦ 6.5 dB Power Gain at 12 GHz ♦ 8 dB Maximum Stable Gain at 12 GHz ♦ 42 dBm Output IP3 ♦ 30% Power-Added Efficiency DRAIN BOND PAD 4X SOURCE BOND PAD (2x) GATE BOND PAD (4X)	Original	FPD3000 FPD3000 MIL-HDBK-263 P100 Au Sn eutectic	PDF
transistor BC 568 Abstract: transistor horizontal c 5802 transistor BC 388 bc 2878 transistor 275 v 593 BC 1325 Contextual Info: FPD3000SOT89 Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 30 dBm Output Power (P1dB) 13 dB Small-Signal Gain (SSG) 1.3 dB Noise Figure 45 dBm Output IP3 45% Power-Added Efficiency FPD3000SOT89E: RoHS compliant	Original	FPD3000SOT89 1850MHZ) FPD3000SOT89E: 2002/95/EC) FPD3000SOT89 22-A114. J-STD-020C, transistor BC 568 transistor horizontal c 5802 transistor BC 388 bc 2878 transistor 275 v 593 BC 1325	PDF
Filtronic Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500 Contextual Info: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15	Original	FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B Filtronic EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500	PDF
FPD3000P100 Abstract: FPD750P100 Contextual Info: FPD750P100 0.5W PACKAGED POWER PHEMT • FEATURES ♦ 26.5 dBm Linear Output Power ♦ 18.5 dB Power Gain at 2 GHz ♦ 11.5 dB Maximum Stable Gain at 10 GHz ♦ 36 dBm Output IP3 ♦ 45% Power-Added Efficiency at 2 GHz • DESCRIPTION AND APPLICATIONS The FPD750P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor	Original	FPD750P100 FPD750P100 FPD3000P100	PDF
VCO-102 Abstract: NBB-502 spf-5189 RF5643wda cxe-2089 Contextual Info: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high	Original		PDF

FPD3000 Search Results

FPD3000 Functional Equivalents (1)

FPD3000 Datasheets (5)

FPD3000 Price and Stock

Omega Engineering FPD3000-D

Omega Engineering FPD3000-D-A

Omega Engineering FPD3000-PULSER

RF Micro Devices Inc FPD3000SOT89E

FPD3000 Datasheets Context Search

0603 footprint IPC

FPD3000

FPD3000

FPD3000SOT89

FPD3000SOT89

fpd3000

FPD3000

TRANSISTOR BC 298

FPD3000SOT89

FPD3000SOT89E

FPD3000SOT89

FPD3000

FPD3000P100

2.4GHz amplifier schematic

FPD3000

transistor BC 568

Filtronic

FPD3000P100

VCO-102