FLM252 Search Results

FLM252 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FLM2527L-20F		Fujitsu	FET, P Channel, ID 13.5 A	Original	PDF	93.27KB	4

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Mini-Circuits ZFLM-252-1WL-S- LIMITER / SMA / ROHS
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DigiKey	ZFLM-252-1WL-S-	Bulk			1	1 $81.22 10 $74.96 100 $73.40 1000 $73.40 10000 $73.40	Buy Now
Mini-Circuits ZFLM-252-1WLB+ Signal Conditioning LIMITER / SMA / BKT
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Mouser Electronics	ZFLM-252-1WLB+		1			1 $86.46 10 $82.60 100 $82.60 1000 $82.60 10000 $82.60	Buy Now
Mini-Circuits ZFLM-252-1WL-S+ Signal Conditioning LIMITER / SMA / RoHS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	ZFLM-252-1WL-S+					1 $83.89 10 $83.89 100 $83.89 1000 $83.89 10000 $83.89	Get Quote

FLM252 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FLM5359-8C Abstract: FUJITSU MICROWAVE Contextual Info: INTERNALLY MATCHED POW ER G aAs FETs C-BAND Electrical Characteristics (Ta = 2S°C) P id B TYP. (dB) G-lcfB TYP. (dB) nadd TYP. (dB) f (GHz) Vos (V) FLM2527L-20 42.5 11.0 34 2 . 5 - 2.7 FLM3742-4C 36 12.0 34 FLM3742-8C 39 11.0 FLM4450-4C 36 FLM4450-8C (rnA)	OCR Scan	FLM2527L-20 FLM3742-4C FLM3742-8C FLM4450-4C FLM4450-8C FLM5359-4C FLM5359-8C FUJITSU MICROWAVE	PDF
LM2527 Abstract: SO 042 Contextual Info: FLM252 7L-20 Internally Matched Power GaAs F E l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Rem Symbol Condition Rating Unit Drain-Source Voltage vds 15 V Gate-Source Voltage vgs -5 V 83.3 w °c °c Total Power Dissipation Tc = 25°C pt Storage Temperature	OCR Scan	FLM252 7L-20 So006 30dBrn 25dBrn 20dBrn LM2527 SO 042	PDF
fujitsu x band amplifiers Contextual Info: FLM2527L-20 FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 42.5dBm Typ. High Gain: G ^ b = 11 dB (Typ.) High PAE: riadd = 34% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package	OCR Scan	FLM2527L-20 FLM2527L-20 fujitsu x band amplifiers	PDF
Contextual Info: FLM2527L-20F - L-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 43.0dBm Typ. • • • • • High Gain: G-\|dB = 11 0clB (TyP) High PAE: r!add = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz	OCR Scan	FLM2527L-20F FLM2527L-20F FCSI0499M200	PDF
fujitsu x band amplifiers Contextual Info: FLM2527L-20F L-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: hadd = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package	Original	FLM2527L-20F FLM2527L-20F FCSI0499M200 fujitsu x band amplifiers	PDF
Contextual Info: FLM2527L-20F L-Band Internally Matched FET FEATURES • High Output Power: P1dB = 43.0dBm Typ. • High Gain: G1dB = 11.0dB (Typ.) • High PAE: hadd = 38% (Typ.) • Broad Band: 2.5 to 2.7GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package	Original	FLM2527L-20F 50ohm FLM2527L-20F 25deg	PDF
FLM2527L-20F Abstract: Eudyna Devices power amplifiers Eudyna Devices X BAND power amplifiers Contextual Info: FLM2527L-20F L-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package	Original	FLM2527L-20F FLM2527L-20F Volt4888 Eudyna Devices power amplifiers Eudyna Devices X BAND power amplifiers	PDF
Contextual Info: FLM2527L-20 fujTtsu Internally M a tc h e d P o w e r G a A s F E T s FEATURES • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 11dB (Typ.) High PAE: riar\|H = 34% (Typ.) Broad Band^2.5 - 2.7GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM2527L-20 FLM2527L-20	PDF
fujitsu x band amplifiers Abstract: FLM2527L-20F Contextual Info: FLM2527L-20F L-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package	Original	FLM2527L-20F FLM2527L-20F FCSI0499M200 fujitsu x band amplifiers	PDF
Eudyna Devices X BAND power amplifiers Abstract: FLM2527L-20F Contextual Info: FLM2527L-20F L-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package	Original	FLM2527L-20F FLM2527L-20F Volt4888 Eudyna Devices X BAND power amplifiers	PDF
FLL105 Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 "FLL105" FLL-300-1 FLK202 Contextual Info: SELECTION GRAPHS Output Power at 1dB Gain Compression dBm GaAs FETs CHIPS c o "co CO CD CL E o O ç aj CD m "D o $ o CL "3 Q. "3 O Frequency (GHz) Fufrsu Selection Graphs 1 1997 Microwave Databook SELECTION GRAPHS HEMTs 16 10 Associated Gain 12 (dB) 14 CÛ	OCR Scan	FLL300-1 FLL200-1 FLL300-2 FLL200-3 FLL200-2 FLL120 FLL105 FLL300-3 FLU35 FLL55 FLL105 FLL101 fll171 "FLL105" FLL-300-1 FLK202	PDF
FLC301XP Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171 Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips	OCR Scan		PDF
FMC141401-02 Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1 Contextual Info: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking	OCR Scan		PDF