FLM252 Search Results

FLM5359-8C

Abstract: FUJITSU MICROWAVE
Contextual Info: INTERNALLY MATCHED POW ER G aAs FETs C-BAND Electrical Characteristics (Ta = 2S°C) P id B TYP. (dB) G-lcfB TYP. (dB) nadd TYP. (dB) f (GHz) Vos (V) FLM2527L-20 42.5 11.0 34 2 . 5 - 2.7 FLM3742-4C 36 12.0 34 FLM3742-8C 39 11.0 FLM4450-4C 36 FLM4450-8C (rnA)

LM2527

Abstract: SO 042
Contextual Info: FLM252 7L-20 Internally Matched Power GaAs F E l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Rem Symbol Condition Rating Unit Drain-Source Voltage vds 15 V Gate-Source Voltage vgs -5 V 83.3 w °c °c Total Power Dissipation Tc = 25°C pt Storage Temperature

fujitsu x band amplifiers

Contextual Info: FLM2527L-20 FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 42.5dBm Typ. High Gain: G ^ b = 11 dB (Typ.) High PAE: riadd = 34% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package

Contextual Info: FLM2527L-20F - L-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 43.0dBm Typ. • • • • • High Gain: G-|dB = 11 0clB (TyP) High PAE: r!add = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz

fujitsu x band amplifiers

Contextual Info: FLM2527L-20F L-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: hadd = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package

Contextual Info: FLM2527L-20F L-Band Internally Matched FET FEATURES • High Output Power: P1dB = 43.0dBm Typ. • High Gain: G1dB = 11.0dB (Typ.) • High PAE: hadd = 38% (Typ.) • Broad Band: 2.5 to 2.7GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package

FLM2527L-20F

Abstract: Eudyna Devices power amplifiers Eudyna Devices X BAND power amplifiers
Contextual Info: FLM2527L-20F L-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package

Contextual Info: FLM2527L-20 fujTtsu Internally M a tc h e d P o w e r G a A s F E T s FEATURES • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 11dB (Typ.) High PAE: riar|H = 34% (Typ.) Broad Band^2.5 - 2.7GHz Impedance Matched Zin/Zout = 50Q

fujitsu x band amplifiers

Abstract: FLM2527L-20F
Contextual Info: FLM2527L-20F L-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package

Eudyna Devices X BAND power amplifiers

Abstract: FLM2527L-20F
Contextual Info: FLM2527L-20F L-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package

FLL105

Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 "FLL105" FLL-300-1 FLK202
Contextual Info: SELECTION GRAPHS Output Power at 1dB Gain Compression dBm GaAs FETs CHIPS c o "co CO CD CL E o O ç aj CD m "D o $ o CL "3 Q. "3 O Frequency (GHz) Fufrsu Selection Graphs 1 1997 Microwave Databook SELECTION GRAPHS HEMTs 16 10 Associated Gain 12 (dB) 14 CÛ

FLC301XP

Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips

FMC141401-02

Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
Contextual Info: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking