25DBRN Search Results

Contextual Info: FLM1213-8C m in a li Internally Matched Power GaAs FETs FEATURES • High Output Power: F3id B = 38-5dBm Typ) • High Gain: = 5 ,5dB (Typ.) • High PAE: riadc| = 23 % (Typ.) • Broad Band: 1 2 . 7 - 1 3.2GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed

LM2527

Abstract: SO 042
Contextual Info: FLM252 7L-20 Internally Matched Power GaAs F E l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Rem Symbol Condition Rating Unit Drain-Source Voltage vds 15 V Gate-Source Voltage vgs -5 V 83.3 w °c °c Total Power Dissipation Tc = 25°C pt Storage Temperature

Fujitsu FLM 150

Contextual Info: FLM 1213-8C Internally Matched Power GaAs I ETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Symbol Hem Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage VGS -5 V 42.8 w Total Power Dissipation Pt Tc = 25°C Storage Temperature

fujitsu x band amplifiers

Contextual Info: FLM2527L-20 FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 42.5dBm Typ. High Gain: G ^ b = 11 dB (Typ.) High PAE: riadd = 34% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package

IEC364

Abstract: TWF0400H54 EN60068-2-31 TWF0400H27 EN60068-2-32 YO51 2714A
Contextual Info: Single output switch mode rectifier FEATURES • 400W continuous output power ■ Power factor corrected, universal input ■ Current limit and overvoltage protection ■ Integral fan cooling ■ Hot pluggable ■ Parallel current share ■ Thermal protection