CS337 Search Results

Contextual Info: CT337/CS337 CotoMOS CT337/CS337 The CT337 and CS337 feature current switching capability to 360mA with a low on resistance of 1.6Ω Maximum. Designed for Security, Measurement and Instrumentation applications the CotoMOS® relay is capable of handling 60V load conditions. If

Contextual Info: CT337/CS337 CotoMOS CT337/CS337 he CT337 and CS337 feature current switching capability to 360mA with a low on resistance of 1.6Ω Maximum. Designed for Security, Measurement and Instrumentation applications the CotoMOS® relay is capable of handling 60V load conditions. If

1F0H-1F7H configuration pio

Abstract: S3 TRIO 64 HT6560A HT6560B DAT00 6560B DD15 LD11 LD12 LD04
Contextual Info: HT6560B Enhanced VL_Bus IDE Controller Features • • • • • • • • Pin-to-pin backward compatible with HT6560A VL_Bus IDE controller IDE interface to 486 and 386 DX/SX local bus VESA VL_Bus rev 1.0 compatible Connects directly to VL_Bus and IDE interface, no extra TTL needed

Contextual Info: EGN21C105I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency

EGN26C070I2D

Contextual Info: EGN26C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater

Contextual Info: EGN21C320IV High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 55.0dBm typ. @ Psat -High Efficiency: 65%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency

SPIF3811

Abstract: PCI7412 Quanta at7 915GM foxconn BCM4401E EX C747 BT 342 project Socket AM2 quanta
Contextual Info: 5 4 3 2 1 ZB1 SYSTEM BLOCK DIAGRAM DVI / 7307 Chrontel Yonah/Merom 479 uFCPGA U44 X'TAL 14.318MHZ P41 Thermal Sensor P5 U64 P3,P4 PCI-Express X 2 Docking Connector CPU TV out / CRT Switch TV in with PCIE1~2 , Lan ,Ser & Par Port , D Clock Generator ICS954310BGLF

B4846

Abstract: S21 Package GRM188B11H102KA01D CS3376C
Contextual Info: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater

Contextual Info: EGN21C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 52.5dBm typ. @ Psat High Efficiency: 68%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.14GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

GRM1882C1H100J

Contextual Info: SGN27C210I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 53.0dBm typ. @ Psat High Efficiency: 62%(typ.) @ Psat Power Gain : 16.3dB(typ.) @ f=2.655GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

6-10 Ghz RF Power 100w amplifier

Abstract: 2S110 GSC356-HYB2300 GRM55ER72A475K EGN26C070I2D GRM188B11H102KA01D 60Ghz GaN amplifier 100W GRM188B31H104KA92D JESD22-A114
Contextual Info: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

CS3376C

Abstract: GRM188B11H102KA01D ATC100B100JW500 risho GRM188B31H104KA92D EGN35C070I2D GSC364-HYB3500 JESD22-A114 MCR03EZPJ101 MCR18EZPJ101
Contextual Info: EGN35C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 60%(typ.) @ Psat ・Power Gain : 15.5dB(typ.) @ f=3.5GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

tic 1260 scr texas

Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
Contextual Info: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.

SPIF3811

Abstract: CT-10K TST*1284a tst1284a lf m5285 foxconn ATI 216 PCI7412 quanta L7837
Contextual Info: 5 4 3 2 1 ZB1 SYSTEM BLOCK DIAGRAM DVI / 7307 Chrontel Yonah/Merom 479 uFCPGA U44 X'TAL 14.318MHZ P41 Thermal Sensor U64 P3,P4 PCI-Express X 2 Docking Connector CPU TV out / CRT with PCIE1~2 , Lan P5 Switch TV in ,Ser & Par Port , D Clock Generator ICS954310BGLFP2

EKZE101

Contextual Info: EGN21C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater

GRM1882C1H100J

Contextual Info: EGN16C105MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 50.5dBm typ. @ Psat High Efficiency: 65%(typ.) @ Psat Power Gain :19dB(typ.) @ f=1.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater

EKZE101

Abstract: GaN amplifier 100W GRM55ER72A475K grm188b11h102ka01d 105w ATC100B Soshin JESD22-A114 MCR18 TZY2Z010A001
Contextual Info: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

fe3001

Contextual Info: FE3001 WESTERN DIGITAL Figure 2. FE300I Block Diagram AT Control Logic I FE3001 WESTERN DIGITAL 84 1 CLK16 CLKHS 83 CLK14 55 56 RESIN PROCLK SYSCLK DMACLK TMRCLK PCLK PCLK ftÉSÓPU CLK287 ÒLYWR DMAMR RESET ÖNBRDL" 50 CPURES 51 MNIO MÉMC316 IOCS 16 ¿EROWS

BMD101

Abstract: lm358-2.5 CS00003J951 quanta foxconn CH52202MA91 CS168 a25 cm1 100u 18p B1317 quanta computer
Contextual Info: 5 4 3 2 1 K2W Block Diagram 1 Dothan+Alviso 915PM +ICH6-M D CPU Thermal Sensor Intel Dothan 27W VRAM 64MB/128MB 478 PIN micro FC-BGA PCIE x 16 2.5Gb/s VGA Chip ATI M24/M26 R,G,B CRT Port S-Video C Channel A MCH DDR2 INTERFACE, 400/533MHz Channel B Alviso 915PM

S3 TRIO 64

Abstract: ld18 st ide controller vl-bus ADR30 6560B LA06 1F0H-1F7H configuration pio 1F0H-1F7H LD08
Contextual Info: HT — 6560B VL_BUS ENHANCED IDE CONTROLLER DEC.07.1994 PAGE: A. General Description — HT–6560B is a VL_Bus Enhanced IDE Controller which provides a control logic and data path between 486, 386 VL_Bus and IDE drives. The HT–6560B is fully compatible with the ANSI ATA revision 4a specification for IDE hard disk

ene kb3926qf

Abstract: ene kb3926qf d2 ene kb3926qf a1 kb3926 kb3926qf kb3926qf d2 ene kb3926 KB3926 A01 quanta tw7 kb3926 d3
Contextual Info: 1 2 3 PCB STACK UP 5 6 31TW7MB00XX LAYER 2 : SGND1 LAYER 3 : IN1 LAYER 4 : IN2 LAYER 5 : VCC 7 DC/DC 3VSUS 5VSUS DC/DC 3VPCU 5VPCU DC/DC +1.05V +1.5V PG43 PG38 PG37 RUN POWER SW PG 43 LAYER 7 : SGND2 AC/BATT CONNECTOR PG 40 BATT CHARGER PG 40 Merom 35W CPU VR

Contextual Info: CT126/CS126 CotoMOS CT126/CS126 The CT126 and CS126 feature high current switching capability to 2.0A with a low on resistance of 0.5Ω Maximum. Designed for Security, Measurement and Instrumentation applications the CotoMOS® relay is capable of handling 40V load conditions.

Contextual Info: EGN21C210I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater

Contextual Info: EGN35C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 60%(typ.) @ Psat Power Gain : 15.5dB(typ.) @ f=3.5GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater