EKZE101 Search Results

Contextual Info: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105C KZH Lower Z @Ultra Low impedance for Personal Computers Storage Equipment @Endurance with ripple current: 1,000 to 5,000 hours at 105C @Non solvent resistant type @RoHS Compliant KZE Lower Z KY

Contextual Info: EGN21C105I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency

EGN26C070I2D

Contextual Info: EGN26C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater

EKZE160E331MHB5D

Contextual Info: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS KZE Low impedance, 105℃ KZH Series Lower Z ●Ultra Low impedance for Personal Computers Storage Equipment with ripple current: 1,000 to 5,000 hours at 105℃ ●Non solvent resistant type ●RoHS Compliant KZE

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Contextual Info: DIM3R3400 400W DC/DC Power Modules FEATURES                   High efficiency 98.2% @ 48Vin, 400W High efficiency 98.5% @ 48Vin, 300W Size: 58.4x36.8x14.2mm 2.30”x1.45”x0.56” Standard footprint Industry standard pin out

schematic diagram 48v battery charger lead acid

Abstract: 2sd2704
Contextual Info: LT8490 High Voltage, High Current Buck-Boost Battery Charge Controller with Maximum Power Point Tracking MPPT Description Features VIN Range: 6V to 80V n V BAT Range: 1.3V to 80V n Single Inductor Allows V Above, Below, or Equal IN to VBAT n Automatic MPPT for Solar Powered Charging

B4846

Abstract: S21 Package GRM188B11H102KA01D CS3376C
Contextual Info: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater

Contextual Info: EGN21C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 52.5dBm typ. @ Psat High Efficiency: 68%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.14GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

GRM1882C1H100J

Contextual Info: SGN27C210I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 53.0dBm typ. @ Psat High Efficiency: 62%(typ.) @ Psat Power Gain : 16.3dB(typ.) @ f=2.655GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

EKZE1

Abstract: EKZE350ESS102MK25S EKZE800ESS821MLP1S KZH Series EKZE101ESS221MK25S EKZE800ESS122MM40S EKZE101ESS680MJ16S EKZE500ESS101MHB5D EKZE101 EKZE800ESS681MM25S
Contextual Info: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105C Upgrade! KZH Lower Z @Ultra Low impedance for Personal Computer and Storage Equipment @Endurance with ripple current: 105C 1000 to 5000 hours @Non solvent-proof type @Pb-free design KZE lower Z

6-10 Ghz RF Power 100w amplifier

Abstract: 2S110 GSC356-HYB2300 GRM55ER72A475K EGN26C070I2D GRM188B11H102KA01D 60Ghz GaN amplifier 100W GRM188B31H104KA92D JESD22-A114
Contextual Info: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

CS3376C

Abstract: GRM188B11H102KA01D ATC100B100JW500 risho GRM188B31H104KA92D EGN35C070I2D GSC364-HYB3500 JESD22-A114 MCR03EZPJ101 MCR18EZPJ101
Contextual Info: EGN35C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 60%(typ.) @ Psat ・Power Gain : 15.5dB(typ.) @ f=3.5GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

solar charger schematic 12V

Abstract: LT1636 equivalent
Contextual Info: Electrical Specifications Subject to Change LT8490 High Voltage, High Current Buck-Boost Battery Charge Controller with Maximum Power Point Tracking MPPT Description Features VIN Range: 6V to 80V n V BAT Range: 1.3V to 80V n Single Inductor Allows V Above, Below, or Equal

Contextual Info: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105C Upgrade! KZH Lower Z @Ultra Low impedance for Personal Computer and Storage Equipment @Endurance with ripple current: 105C 1,000 to 5,000 hours @Non solvent-proof type @Pb-free design KZE lower Z

2S110

Abstract: GRM188B11H102KA01D
Contextual Info: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater

EKZE101

Contextual Info: EGN21C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater

GRM1882C1H100J

Contextual Info: EGN16C105MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 50.5dBm typ. @ Psat High Efficiency: 65%(typ.) @ Psat Power Gain :19dB(typ.) @ f=1.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater

EKMA160

Abstract: ELXY EKMG401E101ML40S EKMG101E KZA No809 No809 CE692 EMVE160ADA100MD55G ELXZ250E471MJ16S 342AL
Contextual Info: アルミ電解コンデンサ CAT.No.1001N 目 次 製品検索 製品一覧表 製品体系図 使用上の注意（アルミ非固体） 品番体系 環境対応 製品ガイド 包装仕様 テーピング仕様 シリーズ統廃合 海外生産拠点

JIS B 0041

Abstract: KZh Series 10MF EKZE800E
Contextual Info: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105C KZH Lower Z @Ultra Low impedance for Personal Computers Storage Equipment @Endurance with ripple current: 1,000 to 5,000 hours at 105C @Non solvent resistant type @RoHS Compliant KZE Lower Z KY

1001N

Abstract: EKZE350E102MK25S EKZE630E102MLP1S
Contextual Info: リード形・低インピーダンス品（105℃） 低Z 長寿命 KZH RoHS指令 適合品 低Z化 KZE ● 低抵抗電解液の採用により超低 ESR・超低インピーダンスを実現。 105℃ 1,000 ~ 5,000 時間保証。（リプル重畳）

mvs 100

Abstract: EKZH 1001N CE692 EMVE160ADA100MD55G EGPA250E562MM35S EMKB401ADA3R3MJA0G EKZH250E151MF11D e55 f55 f61 EKMA160
Contextual Info: アルミ電解コンデンサ CAT.No.1001N 新しい品番体系に移行させて頂きました。 ホームページ上で新旧品番の照会をして頂くことができます。 こちらからアクセスして頂けます。 目 次 製品検索

Contextual Info: Using the LMZ35003EVM-001 Evaluation Module User's Guide Literature Number: SNVU294 JULY 2013 User's Guide SNVU294 – JULY 2013 LMZ35003EVM-001 Simple Switcher Power Module Evaluation Module The LMZ35003EVM-001 evaluation module is designed as an easy-to-use platform for evaluating the

Contextual Info: Using the TPS84250EVM-001 User's Guide Literature Number: SLVU460A November 2011 – Revised July 2012 User's Guide SLVU460A – November 2011 – Revised July 2012 TPS84250EVM-001 2.5-A, Integrated Power Solution Evaluation Module The TPS84250EVM-001 evaluation module is designed as an easy-to-use platform for evaluating the