MCR03EZPJ101 Search Results

MCR03EZPJ101 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MCR03EZPJ101		ROHM	RES 100 OHM 1/10W 5% 0603 SMD	Original	PDF	71.93KB	5
MCR03EZPJ1011		ROHM	Thick film rectangular resistors	Original	PDF	60.34KB	5

MCR03EZPJ101 Price and Stock

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ROHM Semiconductor MCR03EZPJ101 RES SMD 100 OHM 5% 1/10W 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	MCR03EZPJ101	Reel			5,000	1 - 10 - 100 - 1000 - 10000 $0.00	Buy Now
	MCR03EZPJ101	Cut Tape			1	1 $0.10 10 $0.10 100 $0.10 1000 $0.10 10000 $0.10	Buy Now
	MCR03EZPJ101	Digi-Reel			1	1 $0.10 10 $0.10 100 $0.10 1000 $0.10 10000 $0.10	Buy Now
Verical ()	MCR03EZPJ101		681,110		16,667	1 - 10 - 100 - 1000 - 10000 -	Buy Now
	MCR03EZPJ101		16,428		10,870	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	MCR03EZPJ101		15,261			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	MCR03EZPJ101		3,424			1 $3.20 10 $3.20 100 $3.20 1000 $1.20 10000 $1.20	Buy Now
Others MCR03 EZP J 101 INSTOCK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip 1 Exchange	MCR03 EZP J 101		3,260			1 - 10 - 100 - 1000 - 10000 -	Get Quote

MCR03EZPJ101 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: EGN21C105I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency	Original	EGN21C105I2D 14GHz 14GHz 25deg /-10MHz 45dBm	PDF
EGN26C070I2D Contextual Info: EGN26C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	EGN26C070I2D 25deg /-10MHz EGN26C070I2D	PDF
B4846 Abstract: S21 Package GRM188B11H102KA01D CS3376C Contextual Info: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater	Original	14GHz EGN21C105I2D /-10MHz 45dBm /-10MHz B4846 S21 Package GRM188B11H102KA01D CS3376C	PDF
Contextual Info: EGN21C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 52.5dBm typ. @ Psat High Efficiency: 68%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.14GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	EGN21C160I2D 14GHz 25deg /-10MHz	PDF
GRM1882C1H100J Contextual Info: SGN27C210I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 53.0dBm typ. @ Psat High Efficiency: 62%(typ.) @ Psat Power Gain : 16.3dB(typ.) @ f=2.655GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	SGN27C210I2D 655GHz /-10MHz 48dBm GRM1882C1H100J	PDF
6-10 Ghz RF Power 100w amplifier Abstract: 2S110 GSC356-HYB2300 GRM55ER72A475K EGN26C070I2D GRM188B11H102KA01D 60Ghz GaN amplifier 100W GRM188B31H104KA92D JESD22-A114 Contextual Info: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	EGN26C070I2D /-10MHz 6-10 Ghz RF Power 100w amplifier 2S110 GSC356-HYB2300 GRM55ER72A475K EGN26C070I2D GRM188B11H102KA01D 60Ghz GaN amplifier 100W GRM188B31H104KA92D JESD22-A114	PDF
CS3376C Abstract: GRM188B11H102KA01D ATC100B100JW500 risho GRM188B31H104KA92D EGN35C070I2D GSC364-HYB3500 JESD22-A114 MCR03EZPJ101 MCR18EZPJ101 Contextual Info: EGN35C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 60%(typ.) @ Psat ・Power Gain : 15.5dB(typ.) @ f=3.5GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	EGN35C070I2D 43dBm /-10MHz CS3376C GRM188B11H102KA01D ATC100B100JW500 risho GRM188B31H104KA92D EGN35C070I2D GSC364-HYB3500 JESD22-A114 MCR03EZPJ101 MCR18EZPJ101	PDF
2S110 Abstract: GRM188B11H102KA01D Contextual Info: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater	Original	EGN26C070I2D /-10MHz /-10MHz 2S110 GRM188B11H102KA01D	PDF
EKZE101 Contextual Info: EGN21C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater	Original	14GHz EGN21C210I2D /-10MHz 48dBm /-10MHz EKZE101	PDF
GRM1882C1H100J Contextual Info: EGN16C105MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 50.5dBm typ. @ Psat High Efficiency: 65%(typ.) @ Psat Power Gain :19dB(typ.) @ f=1.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	EGN16C105MK 25deg D10MHz 45dBm /-10MHz GRM1882C1H100J	PDF
EKZE101 Abstract: GaN amplifier 100W GRM55ER72A475K grm188b11h102ka01d 105w ATC100B Soshin JESD22-A114 MCR18 TZY2Z010A001 Contextual Info: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	EGN21C105I2D 14GHz 14GHz /-10MHz 45dBm EKZE101 GaN amplifier 100W GRM55ER72A475K grm188b11h102ka01d 105w ATC100B Soshin JESD22-A114 MCR18 TZY2Z010A001	PDF
RY130 Abstract: ry185 Piher* pot 47K Ry110 RY182 Piher* pot 470K RY169 3296 Variable Resistor terminals BOURNS MRS16T UR73D3ATTE10L0F Contextual Info: An invaluable resource for buyers and engineers This particular book presents Anglia’s primary resistor product lines sourced from six key suppliers. Compiled in a convenient format to assist both buyers and engineers, it provides all the essential data and part numbers to aid the	Original		PDF
Contextual Info: EGN21C210I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	EGN21C210I2D 14GHz 14GHz 25deg /-10MHz	PDF
Contextual Info: EGN35C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 60%(typ.) @ Psat Power Gain : 15.5dB(typ.) @ f=3.5GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	EGN35C070I2D 25deg /-10MHz	PDF

mar 827 Abstract: 210w AF Power Amplifier CS3376C ATC100B JESD22-A114 TZY2Z010A001 MURATA GRM55ER72A475K Contextual Info: EGN21C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	EGN21C210I2D 14GHz 14GHz /-10MHz mar 827 210w AF Power Amplifier CS3376C ATC100B JESD22-A114 TZY2Z010A001 MURATA GRM55ER72A475K	PDF