C10P20FR Search Results

C10P20FR

Contextual Info: FRD Type : C10P20FR OUTLINE DRAWING FEATURES * Dual Diodes – Anode Common * Ultra – Fast Recovery * Low Forward Voltage Drop * High Surge Capability * 200 Volts thru 600 Volts Types Available Maximum Ratings Approx Net Weight:1.9g Rating Symbol Repetitive Peak Reverse Voltage

C10P20FR

Contextual Info: FRD Type : C10P20FR OUTLINE DRAWING FEATURES * Dual Diodes – Anode Common * Ultra – Fast Recovery * Low Forward Voltage Drop * High Surge Capability * 200 Volts thru 600 Volts Types Available Maximum Ratings Approx Net Weight:1.9g Rating Symbol Repetitive Peak Reverse Voltage

Contextual Info: FAST RECOVERY DIODE H A / 100~ 200V/trr : 35nsec C}OP|OFr C10P20Fr F 10P10Fr F |0P20Fr 10.3i.405 FEATURES 3.4j.l34)r ° Similar to TO-220AB Case ° Fully Mold Isolation F-Type) ° Dual Diodes - Cathode Common and Anode Common (Type-R) ¡¿4^ 55) 4.U.161IMAX

F10P20F

Abstract: 10P10 C10P10F C10P10FR C10P20F F10P F10P10FR T40-X C10P-FR F10P20FR
Contextual Info: FAST RECOVERY DIODE U A / 100~ 200V /,rr: 35„ * c « jjfl» C}0P20Fr F 10P 10Fr F 10P20Fr 3.K.122 MAX FEATURES f 10.3C405) 3 .4 U 3 4 )„ •*</3S118I1&#39; ° Similar to T0-220AB Case » Fully Mold Isolation F-Type) 553) • Dual Diodes - Cathode Common and

F10P20F

Abstract: C10P10F 0P20FR
Contextual Info: FAST RECOVERY DIODE H A / 100~ 2OOV/.rr:35nsec C|OP|OFr C10P 20Fr F 10P 10F r F 10M 0Fr FEATURES ° Similar to TO-220AB Case °Fully Mold Isolation F-Type ° Dual Diodes - Cathode Common and Anode Common (Type-R) ° Ultra - Fast Recovery ° Low Forward Voltage Drop

Contextual Info: FRD Type：C10P20FR •OUTLINE DRAWING 構造 ： 拡散型シリコンダイオード F R D Construction: Diffusion-type Silicon Diode 用途 ：高周波整流用 Application : High Frequency Rectification (Rtype) ■最大定格 / Maximum Ratings Rating

30KF60B

Abstract: 10EF1 NSF03A20 C25P10Q F10P10Q C25P40F KSF25A120B C10P10Q 61MQ60 c16p40f
Contextual Info: ALPHA-NUMERICAL INDEX ALPHA-NUMERICAL INDEX cont’d TY PE TY PE P ag e P age TY PE P age TY PE Page TY PE P age 1N4001 604 5KF40 482 10DF6 440 ♦ 11EFS3 434 20E2 610 1N4002 604 5KF40B 482 ♦ 10DF8 440 ♦ 11EFS4 434 20E4 610 IN 4003 604 ♦ 5KQ30 166

motorola diode cross reference

Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Contextual Info: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3

Contextual Info: FRD Type：C10P20FR •OUTLINE DRAWING 構造 ： 拡散型シリコンダイオード F R D Construction: Diffusion-type Silicon Diode 用途 ：高周波整流用 Application : High Frequency Rectification (Rtype) ■最大定格 / Maximum Ratings Rating

C10P20F

Abstract: F10P20F C10P10FR F10P F10P10FR 5a ultra fast diode 443j
Contextual Info: FAST RECOVERY DIODE H A /i0 0 ~ 2 0 0 v /tr r :3 5 n s « '} ° ; R « ¡¡™ ro p FEATURES ÍÜf r f I S p I S f r "1/3.0 .118 M AX ’Similar to T0-220AB Case >Fully Mold Isolation (F-Type) 1Dual Diodes - Cathode Common and Anode Common (Type-R) MAX5'•*-1<-16»MAX

F10P100

Abstract: 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F
Contextual Info: SELECTORS GUIDE S c h o ttk y B a rrie r Diode-Single C ase Style Io A V FM (V) 1.0 0.45 30 11EQS03L 52 0.45 20 ♦ 11EQS02L 50 0.55 30 40 ♦ 11EQ03 11EQ04 60 0.58 50 60 ♦ 11EQ05 11EQ06 62 0.85 90 100 ♦ 11EQ09 11EQ10 64 0.55 30 40 ♦ 11EQS03 11EQS04