BGD885 Search Results

Contextual Info: bti53T31 00 32 3 3 1 Philips Semiconductors T10 APX ^^^Preliminai^specificatlon Hybrid CATV amplifier module BGD885 — N A1ER PHILIPS/DISCRETE PINNING -SOT11SD FEATURES PIN CONFIGURATION DESCRIPTION PIN • Excellent linearity • Extremely low noise 1 input

hybrid for catv amplifier

Abstract: HYBRID SEMICONDUCTORS philips hybrid BGD885 catv amplifier philips hybrid CATV CATV amplifier hybrid
Contextual Info: Preliminary specification Philips Semiconductors BGD885 Hybrid CATV amplifier module PINNING -SOT115D FEATURES • DESCRIPTION PIN Excellent linearity PIN CONFIGURATION 1 input • Extremely low noise • Silicon nitride passivation 2 common • Rugged construction

BGD885

Abstract: DIN45004B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D248 BGD885 860 MHz, 17 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 25 2001 Nov 02 NXP Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier

Contextual Info: Philips Semiconductors Product specification CATV amplifier module BGD885 FEATURES PINNING-SOT115D • Excellent linearity PIN • Extremely low noise 1 • Silicon nitride passivation 2, 3, 5, 6, 7 DESCRIPTION input common • Rugged construction 4 10 V, 200 mA supply terminal

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D248 BGD885 860 MHz, 17 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 25 2001 Nov 02 Philips Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D248 BGD885 860 MHZ, 17 dB gain power doubler amplifier Product specification Supersedes data of 1998 Mar 12 2001 Oct 25 Philips Semiconductors Product specification 860 MHZ, 17 dB gain power doubler amplifier

capacitor 1 nf

Abstract: 6-32UNC-2A BGD885 DIN45004B
Contextual Info: Philips Semiconductors Product specification CATV amplifier module FEATURES BGD885 PINNING -SOT115D • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input note 1 • Silicon nitride passivation 2 common • Rugged construction 3 common • Gold metallization ensures

6-32UNC-2A

Abstract: capacitor 1 nf BGD885 catv amplifier UNC6-32
Contextual Info: Philips Semiconductors Product specification CATV amplifier module FEATURES BGD885 P IN N IN G -S O T115D • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input note 1 • Silicon nitride passivation 2 common • Rugged construction 3 common

str 450 a

Abstract: hybrid for catv amplifier BGD885 BP317 DIN45004B SC16
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D248 BGD885 CATV amplifier module Product specification Supersedes data of 1997 Apr 14 File under Discrete Semiconductors, SC16 1998 Mar 12 Philips Semiconductors Product specification CATV amplifier module

d885

Contextual Info: DISC RETE S E M IC O N D U C TO R S ATA S&flEET BGD885 CATV amplifier module 1998 Mar 12 Product specification Supersedes data of 1997 Apr 14 File under Discrete Semiconductors, SC16 Philips Semiconductors PHILIPS PHILIPS Philips Sem iconductors Product specification

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D248 BGD885 860 MHz, 17 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 25 2001 Nov 02 NXP Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier FEATURES

hybrid for catv amplifier

Abstract: BGD885
Contextual Info: Philips Semiconductors B i 1 3 ^ 5 3 *^ 3 1 0032331 T10 A P X ^^^^^reliminan^specification Hybrid CATV amplifier module — ^ BGD885 — N A1ER PHILIPS/DISCRETE PIN CONFIGURATION rIN N IN U -S U I l lb U FEATURES DESCRIPTION PIN • Excellent linearity • Extremely low noise

MRF581

Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
Contextual Info: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

uaf4000

Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
Contextual Info: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに

BGE788

Abstract: Datahandbook HBCC32 TRANSIMPEDANCE mmic laser BGR269 BGS67A BGY585A BGY587 BGY587B BGY588N
Contextual Info: Semiconductors Product Portfolio RF Access Systems CATV RF Hybrid Amplifiers * Type Number Description Reverse Hybrids BGS67A 65 MHz, 25.5 dB gain Reverse Amplifier, 12 V BGY68 75 MHz, 30 dB gain Reverse Amplifier BGY66B 120 MHz, 25 dB gain Reverse Amplifier

BF1201A

Abstract: bf1211 dual gate mosfet bfq34 application note SA636 BFG480W BF862 AM LNA BFR10 SA676 Reliability SA612A SA614A
Contextual Info: RF Products RF Products 241 RF Access Systems CATV RF Hybrid Amplifiers Type Number Description Frequency Range Gain dB Slope (dB) FL S11/S22 CTB XMOD CSO @Ch @Vo (dBmV) F @fmax Itot (mA) BGS67A 65 MHz, 25.5 dB gain Reverse Amplifier, 12 V 5 - 65 25 - 26

bgy888

Abstract: cable tv amplifier with bge788 BGD502 BGR269 BGS67A BGY585A BGY587 BGY587B BGY588N BGY66B
Contextual Info: Philips Semiconductors New horizons in broadband communications Wideband modules for CATV applications Innovations in CATV power - the broadband revolution Broadband cable is today more than a delivery mechanism for TV channels. With the rapid rise in content delivery and interactive services, broadband cable access is becoming the accepted

tcxo philips 4322

Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
Contextual Info: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The

BFG591 amplifier

Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
Contextual Info: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

RF1119

Abstract: TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN
Contextual Info: RF᠟‫ݠ‬㄀11⠜ RFѻકⱘᑨ⫼੠䆒䅵᠟‫ݠ‬ 2008ᑈ9᳜ www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,

2SK43 transistor

Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
Contextual Info: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written

Audio Power Amplifier MOSFET TOSHIBA

Abstract: P-Channel Depletion Mosfets RF MODULE CIRCUIT DIAGRAM dect gaas fet vhf uhf varicap diode Laser Diode for dvd 500 mW 2SK508 J113 equivalent BGY88/04 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
Contextual Info: Semiconductors RF Manual 6th edition Application and design manual for RF products May 2005 date of release: May 2005 document order number: 9397 750 15125 Semiconductors Henk Roelofs,Vice President & General Manager RF Products Introduction The RF Manual covers a broad variety of material and many aspects about RF systems. It shows