BC237 Search Results

transistor bc237 bc337

Abstract: BC238 NPN transistor download datasheet BC239 BC237 BC238 BC239 NPN transistor download datasheet BC238 datasheet transistor bc237 datasheet
Contextual Info: BC237.BC239 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications The transistor is subdivided into three groups, A, B, and C, according to its DC current gain. 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings Ta = 25 OC

bcv59

Abstract: N705 bcv-59 ZTX301
Contextual Info: ’ ZETEX SEMICONDUCTORS IbE D • =1170570 000b675 0 ■ ZETB ' SEM IC O N D U C T O R DICE ELECTRICAL C H A RA C TERIST ICS NPN SM A LL SIGNAL TRA N SISTO R S Dice type- BC546A BC546B ZT X304 BCY65EA BC182 BC107A BC107B BC237 BC547A BC547B BC550B BC550C

BC237

Abstract: BC238 datasheet BC239
Contextual Info: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter

8C317

Abstract: BC3098 bc2388 BC306 8C239 bc238 BC259C TO92
Contextual Info: DEVICE TYPE PA C K A G E B V C fO BVCBO B VE80 CBO # VCB IVI M M VI MIN BC237 BC237A BC237B BC238 BC238A N P N T O -92 N P N T O -92 N PN TO -92 N PN T O -9 2 N P N T O -92 (77 (77) (77) (77) (77) 45 45 45 20 20 50 50 50 30 30 BC2388 BC238C 8C239 BC239B

bcy591x

Abstract: 2N6429A sot23 12p BCY590 2SC538A TBC337A BC521 LOW-POWER SILICON NPN TMPT6429 BCY59C
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 BC382 KSC1072 2SC538A 2SC538A 2SC538A BCX59-9 BCX70J BCY591X TBC337A BCW66RG gg~~iB~ 15 20 BCY59B BCY59B BC171 JE9014 JC501R M02975 2N2916A BFY76 ~~~~~~B BCY59-B BCY59C BCY59C BCY55 BCX59-10 BCY59X BC237C BC237C18

BC237

Abstract: BC237 complementary bc238 bc239 BC307
Contextual Info: SEMICONDUCTOR BC237/8/9 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A ・High Voltage : BC237 VCEO=45V. ・Low Noise : BC239 NF=0.2dB Typ. , 3dB(Max.) (VCE=6V, IC=0.1mA, f=1kHz).

bc237

Abstract: BC237B bc238 bc237a bc237c bc239 238B 238c
Contextual Info: BC237/238/239 NPN TO-92 Bipolar Transistors 1. COLLECTOR TO-92 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCEO VEBO Parameter Value BC237 45 BC238/239 25 Collector-Emitter Voltage

Contextual Info: SEMICONDUCTOR BC237/8/9 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES 1994. 3. 2 Revision No : 0 1/2

BC238B

Abstract: BC239 BC237A BC238 BC237 bc237v
Contextual Info: MOTOROLA Order this document by BC237/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors BC237,A,B,C BC238B,C BC239,C NPN Silicon COLLECTOR 1 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol BC 237 BC 238 BC 239 Unit VCEO 45 25 25

BC238

Abstract: transistor bc237 bc337 BC237 BC239 transistor bc238 Transistor bc239 BC238 NPN transistor
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC237/238/239 SWITCHING AND AMPLIFIER APPLICATIONS TO -92 • LO W NOISE: BC239 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol C ollector-E m itter Voltage : BC237 : BC 238/239 C ollector-E m itter Voltage : BC237

Contextual Info: BC237,A,B,C BC238,B,C BC239,C M AXIM U M R A T IN G S R atin g Sym b ol BC BC BC 2 3 7 2 3 8 2 39 Unit Collector-Em itter Voltage VCEO 45 25 25 Vdc Collector-Em itter Voltage VCES 50 30 30 Vdc Em itter-Base Voltage vebo 6.0 5.0 5.0 Vdc Collector Current - Continuous

BC238BC

Abstract: bc237a BC238B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors BC237,A,B,C BC238B,C BC239,C NPN Silicon EMITTER MAXIMUM RATINGS Symbol BC237 BC238 BC239 Unit C ollector-E m itter Voltage VCEO 45 25 25 Vdc C ollector-E m itter Voltage VCES 50 30 30 Vdc V EBO

bc1078

Abstract: BC317 BC167 BC1O7 BCI69 BC168 bc108 cbe BC257 bc2378 T0-92A
Contextual Info: BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.

BC238

Abstract: 238C BC239 25CC BC237 BC237A BC307 BC308C JE125 BC239C
Contextual Info: BC237,A,B,C BC238,B,C BC239,C M A X IM U M R A TIN G S S ym b o l R a tin g BC BC BC U n it 237 238 239 Co Ilector-E m itter Voltage VCEO 45 25 25 Vdc C o lle cto r-E m itte r Voltage VCES 50 30 30 Vdc Vebo 6.0 5.0 5.0 Vdc Em itter-Base Voltage CASE 29-04, STYLE 17

Contextual Info: r * FORWARD INTERNATIONAL BLECIRONKB LTD, BC237 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR Package: TO-92 ABSOLUTE MAXIMUM RATINGS at Tamh=25*C Characteristic Symbol Rating Colkctoi^Emitter Voltage Vces 50 Collector-Emitter Voltage

BC237

Abstract: transistor bc237 BC238 NPN transistor transistor 239 BC238 transistor BC238 transistor bc237 bc337 BC239 NPN transistor bc237 transistor BC238 datasheet
Contextual Info: BC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • LOW NOISE: BC239 TO-92  ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Collector-Emitter Voltage :BC237 BC238/239 Collector-Emitter Voltage :BC237 BC238/239 Emitter-Base Voltage

BC237B

Abstract: transistor 238B TRANSISTOR bc237c BC237 238C BC237A transistor TRANSISTOR BC237b transistor bc237 bc337 BC238 238B
Contextual Info: BC237/238/239 BC237/238/239 TRANSISTOR NPN FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: TO-92 0.35 W (Tamb=25℃) 1. COLLECTOR 0.1 A 2. BASE 3. EMITTER BC237 50V BC238/239 30V Operating and storage junction temperature range

Contextual Info: BC237PA Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15nx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.170 h(FE) Max. Current gain.

Contextual Info: BC237PBK Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15nx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.290 h(FE) Max. Current gain.

Contextual Info: BC237C Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15n @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V).60 @I(C) (A) (Test Condition)100m

bc237

Abstract: bc238 bc239 BC237 complementary TRANSISTOR bc238 BC307 transistor bc239 120120A
Contextual Info: SEMICONDUCTOR BC237/8/9 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A High Voltage : BC237 VCEO=45V. Low Noise : BC239 NF=0.2dB Typ. , 3dB(Max.) (VCE=6V, IC=0.1mA, f=1kHz). N E K

bc237v

Abstract: bc238 BC237
Contextual Info: ON Semiconductort BC237,A,B,C BC238B,C BC239C Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC237 BC238 BC239 Unit Collector–Emitter Voltage VCEO 45 25 25 Vdc Collector–Emitter Voltage VCES 50 30 30 Vdc Emitter–Base Voltage VEBO 6.0

BC238

Abstract: BCY59A ZTX304 ZTX302 BC107A BC107B BC182 BC237 BC546A BC546B
Contextual Info: SEMICONDUCTOR DICE NPN SMALL SIGNAL TRANSISTORS V CBO V CEO IcBO Min. Min. Max. at V CB Volts Volts BC 546A BC546B Z TX304 BC Y65EA BC182 BC 107A BC107B BC237 BC 547A BC547B BC550B BC550C B C Y59A BC Y59B BCY59C BCY59D 2N930 Z TX303 BC183 BC184 ZTX302 ZTX301

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B