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    TE Connectivity

    TE Connectivity 901-24-R-19-93-PN-8

    901-24 R 19-93 PN 8 MOQ Reduction
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    Master Electronics 901-24-R-19-93-PN-8
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    TE Connectivity 901-H-41-19-93-PPN-8

    901 H 41-19-93 PPN 8 MOQ Reduction
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    Master Electronics 901-H-41-19-93-PPN-8
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    • 1000 $998.31
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    TE Connectivity 901-92-R-19-93-PN-8

    901-92 R 19-93 PN 8 MOQ Reduction
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    Master Electronics 901-92-R-19-93-PN-8
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    TE Connectivity 941-21-A-19-93-PN-8

    941-21 A 19-93 PN 8 MOQ Reduction
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    Master Electronics 941-21-A-19-93-PN-8
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    • 100 $1176.59
    • 1000 $784.89
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    TE Connectivity 901-20-RZ-2-19-93-PN-F5

    901-20 RZ 2-19-93 PN-F5 MOQ Reduction
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics 901-20-RZ-2-19-93-PN-F5
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    993P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    remote control toy car circuit diagram

    Abstract: PT8A992P 128-KHz 128KHz remote control toy car circuit PT8A993 remote control toy car toy car remote remote controlled car 10-Function
    Contextual Info: Data Sheet PT8A992P/993P 10-Function Remote Controller |


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    pt8a992p/993p10-functionpt8a992ppt8a993p+9pt0054remote control toy car circuit diagram128-khz128khzremote control toy car circuitpt8a993remote control toy cartoy car remoteremote controlled car PDF

    IS46TR

    Abstract: IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"
    Contextual Info: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION MAY 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V        


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    is43/46tr16128a/alis43/46tr82560a/al256mx8128mx16+8cycles/64cycles/3260a/al78-ballis46tris43tr82560addr3 dram 2gb 128mx16 96ball fbga2gb ddr3 sdram PDF

    NT5CB64M16AP-CF

    Abstract: nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC
    Contextual Info: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature  Write Leveling  1.5V ± 0.075V JEDEC Standard Power Supply  OCD Calibration  8 Internal memory banks (BA0- BA2)  Dynamic ODT (Rtt_Nom & Rtt_WR)  Differential clock input (CK, )


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    nt5cb256m4annt5cb128m8annt5cb64m16ap60-ball+1084-ballnt5cb64m16ap-cfnt5cb64m16nt5cb64m16ap-cgnanya nt5cb64m16apnt5cb64mnt5cb64m16ap-bent5cb64m16ap-dhmpr 20 20 cf resistornt5cb64m16ap-ac PDF

    Contextual Info: IS43/46TR16640A, IS43/46TR16640AL IS43/46TR81280A, IS43/46TR81280AL 128MX8, 64MX16 1Gb DDR3 SDRAM NOVEMBER 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V       


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    is43/46tr16640ais43/46tr16640alis43/46tr81280ais43/46tr81280al+6128mx864mx16cycles/64cycles/321600mt/sis43tr81280al PDF

    Contextual Info: IS43/46TR16128A, IS43/46TR16128AL, IS43/46TR82560A, IS43/46TR82560AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM NOVEMBER 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V      


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    is43/46tr16128ais43/46tr16128alis43/46tr82560ais43/46tr82560al+6256mx8128mx16cycles/64cycles/321333mt/sis46tr82560al PDF

    Contextual Info: IS43/46TR16640B, IS43/46TR16640BL IS43/46TR81280B, IS43/46TR81280BL 128MX8, 64MX16 1Gb DDR3 SDRAM NOVEMBER 2014 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V  Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C


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    is43/46tr16640bis43/46tr16640blis43/46tr81280bis43/46tr81280bl+6128mx864mx16cycles/64cycles/323tr81280bl-125jbl PDF

    Contextual Info: DATA SHEET 1G bits DDR3 SDRAM EDJ1108BABG 128M words x 8 bits EDJ1116BABG (64M words × 16 bits) Specifications Features • Density: 1G bits Organization  16M words × 8 bits × 8 banks (EDJ1108BABG)  8M words × 16 bits × 8 banks (EDJ1116BABG)


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    edj1108babgedj1116babg78-ball96-ball+11600mbps/1333mbps/1066mbps/800mbps PDF

    Contextual Info: IS43/46TR16256A, IS43/46TR16256AL, IS43/46TR85120A, IS43/46TR85120AL 512Mx8, 256Mx16 4Gb DDR3 SDRAM ADVANCED INFORMATION DECEMBER 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V •


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    is43/46tr16256ais43/46tr16256alis43/46tr85120ais43/46tr85120al+6512mx8256mx16cycles/64cycles/32is46tr85120al-15hbla2 PDF

    NT5CB128M8CN

    Abstract: NT5CB256M4CN NT5CB128
    Contextual Info: 1Gb DDR3 SDRAM C-Die NT5CB256M4CN / NT5CB128M8CN Feature  1.5V ± 0.075V JEDEC Standard Power Supply  Write Leveling  8 Internal memory banks (BA0- BA2)  OCD Calibration  Differential clock input (CK, )  Dynamic ODT (Rtt_Nom & Rtt_WR)


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    nt5cb256m4cnnt5cb128m8cn78-ballrate32+1nt5cb128 PDF

    NT5CB256M8DN

    Abstract: NT5CB256m tl 555 c "2Gb DDR3 SDRAM" NT5CB256M8 NT5CB256 NT5CC256M8 NT5CC256
    Contextual Info: 2Gb DDR3 SDRAM D-Die NT5CB512M4DN / NT5CB256M8DN NT5CC512M4DN / NT5CC256M8DN Feature  1.5V ± 0.075V / 1.35V -0.0675V/+0.1V JEDEC Standard Power Supply  Output Driver Impedance Control  Write Leveling  OCD Calibration  Dynamic ODT (Rtt_Nom & Rtt_WR)


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    nt5cb512m4dnnt5cb256m8dnnt5cc512m4dnnt5cc256m8dn+1078-ballrate32dex78ballsnt5cb256mtl 555 c2gb ddr3 sdramnt5cb256m8nt5cb256nt5cc256m8nt5cc256 PDF

    NT5CC256

    Contextual Info: 2Gb DDR3 SDRAM D-Die NT5CB512M4DN / NT5CB256M8DN NT5CC512M4DN / NT5CC256M8DN Feature  1.5V ± 0.075V / 1.35V -0.0675V/+0.1V JEDEC Standard Power Supply  Output Driver Impedance Control  Write Leveling  OCD Calibration  Dynamic ODT (Rtt_Nom & Rtt_WR)


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    nt5cb512m4dnnt5cb256m8dnnt5cc512m4dnnt5cc256m8dn+1nt5cc256 PDF

    EDJ4208BASE-DJ-F

    Abstract: EDJ4208BASE EDJ4208BASE-GN-F 1024M ELPIDA DDR3 User
    Contextual Info: DATA SHEET 4G bits DDR3 SDRAM EDJ4204BASE 1024M words x 4 bits EDJ4208BASE (512M words × 8 bits) Specifications Features • Density: 4G bits • Organization  128M words × 4 bits × 8 banks (EDJ4204BASE)  64M words × 8 bits × 8 banks (EDJ4208BASE)


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    edj4204base1024medj4208base78-ball+51600mbps/1333mbps/1066mbpsm01e1007edj4208base-dj-fedj4208base-gn-felpida ddr3 user PDF

    IS43TR16640A

    Contextual Info: IS43/46TR16640A, IS43/46TR16640AL IS43/46TR81280A , IS43/46TR81280AL 128MX8, 64MX16 1Gb DDR3 SDRAM ADVANCED INFORMATION NOVEMBER 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V •


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    is43/46tr16640ais43/46tr16640alis43/46tr81280ais43/46tr81280al+7128mx864mx16cycles/64cycles/32switch-15gbla1is46tr81280ais43tr16640a PDF

    EDJ4208EASE-DJ

    Abstract: EDJ4208EASE-DJ-F 1024M DDR3 4G SPD DDR3L-1066F DDR3L-1333
    Contextual Info: DATA SHEET 4G bits DDR3L SDRAM EDJ4204EASE 1024M words x 4 bits EDJ4208EASE (512M words × 8 bits) Specifications Features • Density: 4G bits • Organization  128M words × 4 bits × 8 banks (EDJ4204EASE)  64M words × 8 bits × 8 banks (EDJ4208EASE)


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    edj4204ease1024medj4208ease78-ball+71333mbps/1066mbpsm01e1007edj4208ease-djedj4208ease-dj-fddr3 4g spdddr3l-1066fddr3l-1333 PDF

    EDJ2104EDBG

    Abstract: ELPIDA DDR3 DDR3L-1066 edj2108EDBG E1797E41 EDJ2108EDBG-DJ-F EDJ2108EDBG-GN-F
    Contextual Info: DATA SHEET 2G bits DDR3L SDRAM EDJ2104EDBG 512M words x 4 bits EDJ2108EDBG (256M words × 8 bits) Specifications Features • Density: 2G bits • Organization  64M words × 4 bits × 8 banks (EDJ2104EDBG)  32M words × 8 bits × 8 banks (EDJ2108EDBG)


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    edj2104edbgedj2108edbg78-ball1600mbps/1333mbps/1066mbps+6m01e1007e1797e41elpida ddr3ddr3l-1066edj2108edbg-dj-fedj2108edbg-gn-f PDF

    J1108

    Contextual Info: PRELIMINARY DATA SHEET 1G bits DDR3 SDRAM EDJ1108BABG 128M words x 8 bits EDJ1116BABG (64M words × 16 bits) Specifications Features • Density: 1G bits Organization  16M words × 8 bits × 8 banks (EDJ1108BABG)  8M words × 16 bits × 8 banks (EDJ1116BABG)


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    edj1108babgedj1116babg78-ball96-ball+21600mbps/1333mbps/1066mbps/800mbpsj1108 PDF

    E1629E20

    Abstract: EDJ1108BFBG-DJ-F
    Contextual Info: PRELIMINARY DATA SHEET 1G bits DDR3 SDRAM EDJ1104BFBG 256M words x 4 bits EDJ1108BFBG (128M words × 8 bits) Specifications Features • Density: 1G bits • Organization ⎯ 32M words × 4 bits × 8 banks (EDJ1104BFBG) ⎯ 16M words × 8 bits × 8 banks (EDJ1108BFBG)


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    edj1104bfbgedj1108bfbg78-ball1600mbps/1333mbps/1066mbps+3m01e0706e1629e20edj1108bfbg-dj-f PDF

    EDJ8216B5MB

    Abstract: E1824E
    Contextual Info: PRELIMINARY DATA SHEET 8G bits DDR3L SDRAM, DDP EDJ8216E5MB 512M words x 16 bits Specifications Features • Density: 8G bits • Organization  64M words × 16 bits × 8 banks • Package  96-ball FBGA  DDP: 2 pieces of 4G bits chip sealed in one


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    edj8216e5mb96-ball1600mbps/1333mbpsm01e1007+3e1826e20edj8216b5mbe1824e PDF

    A1A4M

    Abstract: ELPIDA DDR3 User
    Contextual Info: DATA SHEET 1G bits DDR3 SDRAM EDJ1108BABG 128M words x 8 bits EDJ1116BABG (64M words × 16 bits) Features • Density: 1G bits Organization  16M words × 8 bits × 8 banks (EDJ1108BABG)  8M words × 16 bits × 8 banks (EDJ1116BABG) • Package  78-ball FBGA (EDJ1108BABG)


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    edj1108babgedj1116babg78-ball96-ball+31600mbps/1333mbps/1066mbps/800mbpsa1a4melpida ddr3 user PDF

    ELPIDA DDR3

    Contextual Info: PRELIMINARY DATA SHEET 1G bits DDR3 SDRAM EDJ1108DJBG 128M words x 8 bits EDJ1116DJBG (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization  16M words × 8 bits × 8 banks (EDJ1108DJBG)  8M words × 16 bits × 8 banks (EDJ1116DJBG)


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    edj1108djbgedj1116djbg78-ball96-ball+21600mbps/1333mbpselpida ddr3 PDF

    EDJ1104BASE

    Contextual Info: DATA SHEET 1G bits DDR3 SDRAM EDJ1104BASE 256M words x 4 bits EDJ1108BASE (128M words × 8 bits) EDJ1116BASE (64M words × 16 bits) Features • Density: 1G bits • Organization  32M words × 4 bits × 8 banks (EDJ1104BASE)  16M words × 8 bits × 8 banks (EDJ1108BASE)


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    edj1104baseedj1108baseedj1116base78-ball+2edj1104/1108base96-ball PDF

    N2CB2G40DN

    Contextual Info: 2Gb DDR3 SDRAM D-Die N2CB2G40DN / N2CB2G80DN N2CC2G40DN / N2CC2G80DN Feature  1.5V ± 0.075V / 1.35V -0.0675V/+0.1V JEDEC Standard Power Supply  Output Driver Impedance Control  Write Leveling  OCD Calibration  Dynamic ODT (Rtt_Nom & Rtt_WR)


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    n2cb2g40dnn2cb2g80dnn2cc2g40dnn2cc2g80dn+178balls PDF

    E1494E60

    Abstract: EDJ1108 edj1108bdse ELPIDA DDR3 User
    Contextual Info: DATA SHEET 1G bits DDR3 SDRAM EDJ1104BDSE 256M words x 4 bits EDJ1108BDSE (128M words × 8 bits) Specifications Features • Density: 1G bits • Organization  32M words × 4 bits × 8 banks (EDJ1104BDSE)  16M words × 8 bits × 8 banks (EDJ1108BDSE)


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    edj1104bdseedj1108bdse78-ball1600mbps/1333mbps/1066mbps+4m01e0706e1494e60edj1108elpida ddr3 user PDF

    Contextual Info: PRELIMINARY DATA SHEET 1G bits DDR3 SDRAM EDJ1104BDSE 256M words x 4 bits EDJ1108BDSE (128M words × 8 bits) Specifications Features • Density: 1G bits • Organization  32M words × 4 bits × 8 banks (EDJ1104BDSE)  16M words × 8 bits × 8 banks (EDJ1108BDSE)


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    edj1104bdseedj1108bdse78-ball1600mbps/1333mbps/1066mbps+2m01e0706e1494e40 PDF