64MX16 Search Results

Contextual Info: 214PIN DDR2 533 Micro-DIMM 1GB With 64Mx16 CL4 TS128MMQ64V5Q Description Placement The TS128MMQ64V5Q is a 128M x 64bits DDR2-533 J Micro-DIMM. The TS128MMQ64V5Q consists of 8pcs 64Mx16bits DDR2 SDRAMs in 92 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board

Contextual Info: MEMORY MODULE DDR SDRam 64Mx16-SOP Double Data Rate SDRam MODULE 3D 1D1G16TS1267 1Gbit DDR SDRam organized as 64Mx16 Pin Assignment Top View SOP 66 (Pitch : 0.65 mm) Features • • • • • • • • • • • • • • • • One 1Gbit DDR SDRam

3D2D4G72UB3478

Contextual Info: MEMORY MODULE DDR2 SDRam 64Mx72-BGA DDR2 SDRAM MODULE 3D 2D4G72UB3478 4Gbit DDR2 SDRam organized as 64Mx72, based on 64Mx16 Pin Assignment BGA 191 - 12x20 - Pitch 1.27mm Features • Organized as 64Mx72  Core supply voltage 1.8V +/- 0.1V  I/O supply voltage 1.8V +/- 0.1V

SG564643FG8N6IR

Abstract: DDR2-667-5-5-5 SG564643FG8N6KF SG564643FG8N6IL
Contextual Info: SG564643FG8N6UU May 19, 2008 Ordering Information Part Numbers Description Module Speed SG564643FG8N6DB 64Mx64 512MB , DDR2, 240-pin DIMM, Unbuffered, Non-ECC, 64Mx16 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant). PC2-3200 @ CL 3.0

Contextual Info: IS43/46TR16640A, IS43/46TR16640AL IS43/46TR81280A, IS43/46TR81280AL 128MX8, 64MX16 1Gb DDR3 SDRAM NOVEMBER 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V       

Contextual Info: IS43/46TR16640B, IS43/46TR16640BL IS43/46TR81280B, IS43/46TR81280BL 128MX8, 64MX16 1Gb DDR3 SDRAM NOVEMBER 2014 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V  Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C

NT1GT64UH8D0FN-AD

Abstract: 64mx16 NT1GT64UH8D0FN-3C PC2-5300 64MX16 DDR2 PC2-6400
Contextual Info: NT512T64UH4D0FN / NT1GT64UH8D0FN / NT2GT64U8HD0BN NT512T64UH4D0FS / NT1GT64UH8D0FS / NT2GT64U8HD0BS 512MB: 64M x 64 / 1GB: 128M x 64 / 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Based on DDR2-533/667/800 64Mx16 512MB /64Mx16 (1GB)/128Mx8 (2GB) SDRAM D-Die

SODIMM DDR2 Mechanical Dimensions

Abstract: PC2-6400 PC2-5300 SSTL-18 NT2GT64U8HC0BN
Contextual Info: NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M x 64 / 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Preliminary Edition Based on DDR2-533/667/800 64Mx16 1GB /128Mx8 (2GB) SDRAM C-Die Features • Performance: PC2-4200 PC2-5300 PC2-6400

IS43TR16640A

Abstract: IS43TR81280A DDR31866K 64MX16 bc 888
Contextual Info: IS43/46TR16640A/AL, IS43/46TR81280A/AL 128Mx8, 64Mx16 1Gb DDR3 SDRAM ADVANCED INFORMATION DECEMBER 2011 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V         

Contextual Info: 172PIN DDR2 533 Micro-DIMM 1024MB With 64Mx16 CL4 TS1GPA1024U5 Description Placement The TS1GPA1024U5 is a 128M x 64bits DDR2-533 Micro-DIMM. The TS1GPA1024U5 consists of 8pcs 64Mx16bits DDR2 SDRAMs in 92 ball FBGA packages and a 2048 bits serial EEPROM on a 172-pin printed

Contextual Info: SG5166485D8NZCU July 8, 2005 Ordering Information Part Numbers Description Module Speed SG5166485D8NZCL 64Mx16 128MB , DDR, 144-pin SO-DIMM, Unbuffered, Non-ECC, 64Mx8 Based, DDR333B, 31.75mm, 22Ω DQ termination, Green Module. PC2700 @ CL 2.5 SG5166485D8NZCG

85X15

Abstract: 63FBGA hynix nand hynix nand spare area bad block HY27 hynix hy27 hynix nand 1G hynix nand flash HY27U
Contextual Info: HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003 Preliminary 0.1 1) Add 1.8V Operation Product to Data sheet

Contextual Info: W3E64M16S-XSBX 64Mx16 DDR SDRAM FEATURES GENERAL DESCRIPTION  DDR SDRAM rate = 200, 250, 266, 333* The 128MByte 1Gb DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 2 chips containing 536,870,912 bits. Each chip is internally configured as a quadbank DRAM.

Contextual Info: SG564283TG8NWUU1 June 18, 2008 Ordering Information Part Numbers Description Module Speed SG564283TG8NWDB1 128Mx64 1GB , DDR2, 200-pin SO-DIMM, Unbuffered, Non-ECC, 64Mx16 Based, DDR2-400-333, 25.40mm, 22Ω DQ termination, Green Module (RoHS Compliant), PC2-3200 @ CL 3.0

Contextual Info: SG516648FG8NZUU May 31, 2006 Ordering Information Part Numbers Description Module Speed SG516648FG8NZDB 64Mx16 128MB , DDR2, 144-pin SO-DIMM, Unbuffered, Non-ECC, 64Mx8 Based, DDR2-400-333, 31.75mm, 22Ω DQ termination, Green Module (RoHS Compliant). PC2-3200 @ CL 3.0

Contextual Info: SG532643FG8NWUU Preliminary Ordering Information Part Numbers Description Module Speed SG532643FG8NWDB 64Mx32 256MB , DDR2, 200-pin SO-DIMM, Unbuffered, Non-ECC, 64Mx16 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant). PC2-3200 @ CL 3.0

Contextual Info: SG572643FG8DWUU March 14, 2007 Ordering Information Part Numbers Description Module Speed SG572643FG8DWDB 64Mx72 512MB , DDR2, 200-pin SO-CDIMM, Unbuffered, PLL, ECC, 64Mx16 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant).

64MX16

Contextual Info: MEMORY MODULE DDR SDRam 64Mx16-SOP Double Data Rate SDRam MODULE 3D 1D1G16TS1267 1Gbit DDR SDRam organized as 64Mx16 Pin Assignment Top View SOP 66 (Pitch : 0.65 mm) Features •                One 1Gbit DDR SDRam

Contextual Info: M2N1G64TUH8G5F / M2S1G64TUH8G4F / M2N2G64TU8HG5B / M2N2G64TU8HG4B 1GB: 128M x 64 / 2GB: 256M x 64 PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Based on DDR2-667/800 64Mx16 1GB /128Mx8 (2GB) SDRAM G-Die Features • Performance: Speed Sort PC2-5300 PC2-6400

Contextual Info: 200PIN DDR2 667 SO-DIMM 1024MB With 64Mx16 CL5 TS128MSQ64V6Q Description Placement The TS128MSQ64V6Q is a 128M x 64bits DDR2-667 SO-DIMM. The TS128MSQ64V6Q consists of 8pcs 64Mx16bits DDR2 SDRAMs in 92 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed

W3E64M16S-XSBX

Contextual Info: White Electronic Designs W3E64M16S-XSBX 64Mx16 DDR SDRAM FEATURES „ DDR SDRAM rate = 200, 250, 266, 333* „ Package: BENEFITS „ • 60 Plastic Ball Grid Array PBGA , 10 x 12.5mm „ 1Gb upgrade to 512Mb 60 FBGA SDRAM „ 2.5V ±0.2V core power supply „

240ohm

Abstract: DDR3 DIMM SPD 204 pin so-DIMM DDR3 connector sodimm ddr3 connector PCB footprint DDR3 DIMM SPD JEDEC nanya ddr3 PC3-10600 SSTL-15 NT2GC64B8HA1NS-BE SO-DIMM DDR3 ECC
Contextual Info: NT1GC64BH8A1PS / NT2GC64B8HA1NS 1GB: 128M x 64 / 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333 64Mx16 1GB / 128Mx8 (2GB) SDRAM A-Die Features •Performance: Speed Sort PC3-8500 PC3-10600 -BE -CG Unit DIMM CAS Latency

Contextual Info: 200PIN DDR2 800 SO-DIMM 1GB With 64Mx16 CL6 TS128MSQ64V8W Description Placement The TS128MSQ64V8W is a 128M x 64bits DDR2-800 SO-DIMM. The TS128MSQ64V8W consists of 8pcs 64Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed

IS43TR81280A

Abstract: 96-ball FBGA RON40pu
Contextual Info: IS43/46TR16640A, IS43/46TR16640AL IS43/46TR81280A , IS43/46TR81280AL 128MX8, 64MX16 1Gb DDR3 SDRAM ADVANCED INFORMATION DECEMBER 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V •