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    SK Hynix Inc H5MS1G32BFR-E3MR

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    Bristol Electronics H5MS1G32BFR-E3MR 667
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    SK Hynix Inc H5MS1G22BFRE3M

    DRAM Chip Mobile-DDR SDRAM 1Gbit 32Mx32 1.8V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA H5MS1G22BFRE3M 14,436
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    HYS H5MS1G22BFR-E3MR

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    Chip 1 Exchange H5MS1G22BFR-E3MR 7,485
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    H5MS1G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    H9ccnnn

    Abstract: H9CKNNNB H5MS1G22AFRE3M H5MS2G22MFR-J3M H5MS2G62 H55S2622JFR-60M H9TKNNN2GDMP-LRNDM DDR333 H5MS2G62AFR-J3M H5MS1G22AFR-E3M
    Contextual Info: Page 1 DENSI TY ORG. SPEED PART NUMBER Package FEATURE Availability 2Gb 64M x 16 166MHz H55S2G62MFP-60M FBGA 54ball 4Bank, 1.8V/ 1.8V Now 133MHz H55S2G62MFP-75M FBGA(54ball) 4Bank, 1.8V/ 1.8V Now 166MHz H55S2G22MFP-60M FBGA(90ball) 4Bank, 1.8V/ 1.8V Now 133MHz


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    166mhzh55s2g62mfp-60m54ball133mhz+13h55s2g62mfp-75mh55s2g22mfp-60m90ballh9ccnnnh9cknnnbh5ms1g22afre3mh5ms2g22mfr-j3mh5ms2g62h55s2622jfr-60mh9tknnn2gdmp-lrndmddr333h5ms2g62afr-j3mh5ms1g22afr-e3m PDF

    H5MS1G62

    Abstract: H5MS1G62MFP-J3M H5MS1G62MFP hynix mcp h5ms1g DDR400 ap die hen mcp H5MS1G62MFP-K3M
    Contextual Info: 1Gbit MOBILE DDR SDRAM based on 16M x 4Bank x16 I/O Specification of 1Gb 64Mx16bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 16,777,216 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


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    64mx16bit16bith5ms1g62mfppage22+800typh5ms1g62h5ms1g62mfp-j3mhynix mcph5ms1gddr400ap die hen mcph5ms1g62mfp-k3m PDF

    H5MS1G22

    Abstract: h5ms1g H5MS1G22MFP H5MS1G32MFP hynix mcp
    Contextual Info: 1Gbit MOBILE DDR SDRAM based on 8M x 4Bank x32 I/O Specification of 1Gb 32Mx32bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 8,388,608 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


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    32mx32bit32bith5ms1g22mfph5ms1g32mfp+8page23100ma120ma450ua500uah5ms1g22h5ms1ghynix mcp PDF

    HYB18M512160AF

    Abstract: h5ms1g22 MT46H32M32LF VIA10 H5MS1G22MFP HYB18M1G320BF-7.5 MA10 AN3963 175756
    Contextual Info: Freescale Semiconductor Application Note Document Number: AN3963 Rev. 0, 03/2010 Interfacing DDR Memories with the i.MX31 by Multimedia Application Division Freescale Semiconductor, Inc. Austin, TX This application note describes the different considerations


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    an3963hyb18m512160afh5ms1g22mt46h32m32lf+5via10h5ms1g22mfphyb18m1g320bf-7.5ma10175756 PDF

    H5TQ2G63BFR-H9C

    Abstract: H5TQ1G83BFR-H9C H26M42001EFR H5RS1H23MFR h27u1g8f2b H27U1G8F2 H27UBG8T2A H27UBG8T H5MS2G22MFR-J3M H26M54001BKR
    Contextual Info: Rev 0.0 Q2’2010 Databook C omputing Memory DDR3 SDRAM : Component VDD DENSITY ORG. SPEED PART NUMBER PKG. FEATURE AVAIL. 1.5V 1Gb 256Mx4 DDR3 1333 H5TQ1G43BFR-H9C FBGA 78ball 8Bank, 1.5V, CL9,9-9-9 Now H5TQ1G43TFR-H9C FBGA(78ball) 8Bank, 1.5V, CL9,9-9-9


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    256mx4h5tq1g43bfr-h9c78ballh5tq1g43tfr-h9c+12h5tq1g43bfr-g7ch5tq1g43tfr-g7ch5tq1g83bfr-h9ch5tq2g63bfr-h9ch26m42001efrh5rs1h23mfrh27u1g8f2bh27u1g8f2h27ubg8t2ah27ubg8th5ms2g22mfr-j3mh26m54001bkr PDF

    h5ms1g22

    Contextual Info: 1Gbit MOBILE DDR SDRAM based on 8M x 4Bank x32 I/O Specification of 1Gb 32Mx32bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 8,388,608 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original
    32mx32bit32bith5ms1g22mfph5ms1g32mfp+1h5ms1g22 PDF