qfn 3x3 tray dimension
Abstract: XCDAISY BFG95 XC5VLX330T-1FF1738I pcb footprint FS48, and FSG48 WS609 jedec so8 Wire bond gap XC3S400AN-4FG400I FFG676 XC4VLX25 cmos 668 fcbga
Contextual Info: Device Package User Guide [Guide Subtitle] [optional] UG112 v3.5 November 6, 2009 [optional] R R Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the
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ug112ug072ug075xapp427+10qfn 3x3 tray dimensionxcdaisybfg95xc5vlx330t-1ff1738ipcb footprint fs48, and fsg48ws609jedec so8 wire bond gapxc3s400an-4fg400iffg676xc4vlx25 cmos 668 fcbga
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C-SZU35
Abstract: Sussex Semiconductor 9ge7 5KP10 5KP10A 5KP11 5KP11A 5KP12 5KP12A 5KP13A
Contextual Info: 5000 WATT UNIPOLAR TRANSIENT SUPPRESSOR CELL SUSSEX SEMICONDUCTOR, INC. TM 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 TEL: 239 768-6800 FAX: (239) 768-6868 GLASS PASSIVATED UNIPOLAR TRANSIENT SUPPRESSOR CELL 5000 WATT MAXIMUM POWER HANDLING
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015in009in95pb/5snc-szu35+9sussex semiconductor9ge75kp105kp10a5kp115kp11a5kp125kp12a5kp13a
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hmp solder 93.5pb
Abstract: Internal MLCC cracking result serious failure mode 93.5pb MLCC CRACK 95Pb desk fan hmp solder air filter planar AN-0011
Contextual Info: Syfer Technology Limited, Old Stoke Road, Arminghall, Norwich, Norfolk, NR14 8SQ, United Kingdom Tel: +44 0 1603 723300. Tel. (Sales): 01603 723310 Fax: +44 (0) 1603 723301 Email: sales@syfer.co.uk Web: www.syfer.com Solder Alloy choice for through hole
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62sn/36pb/2ag60sn/40pb2002/95/echmp solder 93.5pb+8internal mlcc cracking result serious failure mode93.5pbmlcc crack95pbdesk fanhmp solderair filter planaran-0011
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U8439-1
Abstract: AUS703 NAU-8 namics underfill ABF-GX3 Ablestik underfill DCL5 X23-7772-4 DCL4 X23-7772
Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA - 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: A1006-03 DATE: 23-Jul-2010 Product Affected: MEANS OF DISTINGUISHING CHANGED DEVICES: 35.0mm x 35.0mm x 3.42mm FCBGA-1156 (RoHS & Standard)
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a1006-0323-jul-2010fcbga-1156fcbga-900+1523-oct-201089hpes16t16zabl89hpes16t16zabr89hpes22t16zabl89hpes22t16zabliu8439-1aus703nau-8namics underfillabf-gx3ablestik underfilldcl5x23-7772-4dcl4x23-7772
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900E 1800
Abstract: chotherm power IGBT MOSFET GTO SCR diode 95Sn5Sb SCR GTO die 28Cu72Ag igbt simulation dc to dc chopper by thyristor thyristor POWEREX powerex igbt
Contextual Info: C U S T O M D E S I G N E D P O W E R M O D U L E S Solutions for High Power Applications C U S T O M D E S I G N E D ● High Power ● ● Solutions in ● Custom Module ● Design ● ● Powerex has addressed ● the need for application ● specific custom power
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135-5k-4/05900e 1800chothermpower igbt mosfet gto scr diode+795sn5sbscr gto die28cu72agigbt simulationdc to dc chopper by thyristorthyristor powerexpowerex igbt
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12SnOFC
Abstract: BQ37 PMC-90 PMC-90 leadframe material MKT-TO220B03 FDP3672 HRF3205 equivalent mosfet number Tamac4 a105 transistor HRF3205 equivalent
Contextual Info: Date Created: 1/9/2004 Date Issued: 2/13/2004 PCN # 20040204 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will
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huf75343p3huf75542p3huf75631p3huf75645p3+16huf75939p3huf76107p3huf76132p3huf76143p3huf76419p3huf76432p312snofcbq37pmc-90pmc-90 leadframe materialmkt-to220b03fdp3672hrf3205 equivalent mosfet numbertamac4a105 transistorhrf3205 equivalent
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microsemi TVS
Abstract: MicroNote
Contextual Info: MicroNote Series 118 by Mel Clark and Kent Walters, Microsemi Scottsdale TVS/Chip Product Overview Microsemi’s offerings of TVS chip size products include: TVS/Chip Passivated TVS/Chip types of: a planar, b) mesa and c) bidirectional mesa are illustrated
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xilinx topside marking
Abstract: xilinx part marking pcb footprint FS48, and FSG48 smd code v36 CF1752 reballing recommended layout CSG324 BGA reflow guide XC2VP7 reflow profile SMD MARKING CODE C1G
Contextual Info: Device Package User Guide [Guide Subtitle] [optional] UG112 v3.6 September 22, 2010 [optional] R R Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the
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ug112ug072ug075xapp427+10xilinx topside markingxilinx part markingpcb footprint fs48, and fsg48smd code v36cf1752reballingrecommended layout csg324bga reflow guidexc2vp7 reflow profilesmd marking code c1g
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xilinx part marking
Abstract: xilinx topside marking UG112 qfn 3x3 tray dimension FGG484 HQG160 reballing top marking 957 so8 FF1148 fcBGA PACKAGE thermal resistance
Contextual Info: Device Package User Guide [Guide Subtitle] [optional] UG112 v3.2 March 17, 2009 [optional] R R Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the
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ug112ug072ug075xapp427+9xilinx part markingxilinx topside markingqfn 3x3 tray dimensionfgg484hqg160reballingtop marking 957 so8ff1148fcbga package thermal resistance
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duraseal
Abstract: SiC IGBT High Power Modules sic wafer 100 mm Wacker Silicones 28Cu72Ag wacker 100C parallel mosfet Cree SiC MOSFET silicon carbide
Contextual Info: Performance and Reliability Characteristics of 1200 V, 100 A, 200oC Half-Bridge SiC MOSFET-JBS Diode Power Modules James D. Scofield and J. Neil Merrett Air Force Research Laboratory 1950 Fifth St WPAFB, OH 45433 937-255-5949 james.scofield@wpafb.af.mil James Richmond and
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200ocdurasealsic igbt high power modulessic wafer 100 mm+7wacker silicones28cu72agwacker100cparallel mosfetcree sic mosfetsilicon carbide
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KE DIODE ON
Abstract: 1N6275A 1.5KE 15A diode 1.5 ke 200a KE 75 DIODE KE 16A DIODE KE 15A code diode KE KE 10A DIODE diode KE 1N6302A 1.5KE 180A
Contextual Info: 600 AND 1500 WATT UNIPOLAR TRANSIENT SUPPRESSOR CELL SUSSEX TM SEMICONDUCTOR, INC. 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 TEL: 239 768-6800 FAX: (239) 768-6868 GLASS PASSIVATED UNIPOLAR TRANSIENT SUPPRESSOR CELL 600 AND 1500 WATT MAXIMUM POWER HANDLING
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015in009in95pb/5snke diode on+91n6275a 1.5ke 15adiode 1.5 ke 200ake 75 diodeke 16a diodeke 15acode diode keke 10a diodediode ke1n6302a 1.5ke 180a
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Technical Brochure
Abstract: Catalytic capacitors coefficient of thermal expansion Kester sn62 tinning SN62 Ceramic Dielectric Axial Capacitors Glass Encapsulated CERAMICS CAPACITORS 0402 88Au novacap epoxy silver
Contextual Info: NOVACAP TECHNICAL BROCHURE O. CHIP USER GUIDELINES Multilayer ceramic capacitors are sold as chip leadless components, or as encapsulated leaded devices. Traditionally, the chip version has been used in densely packed hybrid and delay line circuits, while the
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technical brochurecatalyticcapacitors coefficient of thermal expansionkester sn62 tinning+5sn62ceramic dielectric axial capacitors glass encapsulatedceramics capacitors 040288aunovacap epoxy silver
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bt 1696
Abstract: 12x12 bga thermal resistance 35x35 bga BGA 23X23 BGA 27X27 pitch TsoP 20 Package XILINX xilinx CS144 thermal resistance CF1144 BGA thermal resistance 6x8 smt a1 transistor
Contextual Info: Xilinx Advanced Packaging Electronic packages are the interconnect housings for semiconductor devices. They provide electrical interconnections between the IC and the board, and they efficiently remove the heat generated by the device. Device feature sizes are
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bt 169612x12 bga thermal resistance35x35 bgabga 23x23+6bga 27x27 pitchtsop 20 package xilinxxilinx cs144 thermal resistancecf1144bga thermal resistance 6x8smt a1 transistor
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12SnOFC
Abstract: PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532
Contextual Info: Date Created: 12/30/2003 Date Issued: 1/15/2004 PCN # 20040002 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will
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fairchildf76143s3shuf76145s3shuf76419s3sthuf76432s3s+16huf76439s3shuf76445s3sthuf76639s3shuf76645s3stisl9n303as3isl9n306as3st12snofcpmc-90pmc-90 leadframe material92.5pb5sn2.5agtamac4mkt-to263a02pmc90pmc-90 to-263rf1s640sm9afdb2532
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24 pin 2 row female pcb header
Contextual Info: 2mm Hard Metric Connector_ PCN21 Series jlEC 61076-4-101-compliant • F eatu res 1. IEC compliant This 2 mm Hard M etric HM C onnector com plies with IEC 6 1 0 76 -4 -1 0 1. As sp e cifie d by IEC S tan da rd s, 3 types are available: Style A (110 contacts), Style B (125
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pcn2161076-4-101-compliant55sc-2pf-gpcn21-p-ck+2pcn21-s-ck24 pin 2 row female pcb header
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DIODE 1N649
Abstract: SZUFD16 1.5ke series SZU16 Sussex Semiconductor 1N4172A 1N4973 SFD16 S100 p4k 20a
Contextual Info: TM SUSSEX SEMICONDUCTOR, INC. DIES AND CELLS SECTION 7 SUSSEX TABLE OF CONTENTS SEMICONDUCTOR, INC. TM 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 TEL: 941 768-6800 FAX: (941) 768-6868 TABLE OF CONTENTS DEVICE TYPE PAGE NUMBER 1. TRANSIENT SUPPRESSOR DIES
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1N6275A 1.5KE 15A
Abstract: 1.5KE 20A 1N6278A AK 061 KE code code KE code KE diode KE 170A KE 75 DIODE KE DIODE ON P6KE51A
Contextual Info: TM SUSSEX SEMICONDUCTOR, INC. TRANSIENT SUPPRESSOR CELLS 7 7 600 AND 1500 WATT UNIPOLAR TRANSIENT SUPPRESSOR CELL SUSSEX TM SEMICONDUCTOR, INC. 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 TEL: 239 768-6800 FAX: (239) 768-6868 GLASS PASSIVATED UNIPOLAR TRANSIENT SUPPRESSOR CELL
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Thin Film Resistors SiCr
Abstract: SiCr thin film TI SAC305 hfss 80Au-20Sn 3 to 10 GHz bandpass filter sac305 thermal conductivity 184394 ansoft SAC305 reflow bga
Contextual Info: AT C / / A V X T H I N F I L M TECHNOLOGIES Engineered Thin Film Solutions TA B L E O F C O N T E N T S Introduction to ATC // AVX Thin Film Technologies .1 - 2
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thin film resistors sicrsicr thin film tisac305hfss+680au-20sn3 to 10 ghz bandpass filtersac305 thermal conductivity184394ansoftsac305 reflow bga
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90Pb10Sn
Abstract: FODB10X 5SN3 AN-3011 FODB100 95Pb-5 62Sn36Pb2Ag 95Pb5Sn
Contextual Info: www.fairchildsemi.com Application Note AN-3011 Surface Mounting Technology Assembly Guidelines for Fairchild’s Microcouplers Ball Grid Array Optocoupler technology, consisting of a light source and a photosensitive detector surrounded by a transparent light
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COAXIAL CABLE 5D-2V
Abstract: 1.5D-HQEW 5D-2V pin shroud rows 1.5D-HQEV 5c-2V COAXIAL CABLE 5c-2V 2 pin male connector 2mm pitch
Contextual Info: 2mm Hard Metric Connector PCN21 Series IEC 61076-4-101-compliant •Features 1. Variety of styles IEC Styles: A 110 contacts, 5 row , B (125 contacts, 5 row), C (55 contacts, 5 row ), D (176 contacts, 8 row), E (200 contacts, 8 row) and M (5 row + 3 coaxial or power
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pcn2161076-4-101-compliant-55pm-2pfpo51m-lj-1+8coaxial cable 5d-2v1.5d-hqew5d-2vpin shroud rows1.5d-hqev5c-2vcoaxial cable 5c-2v2 pin male connector 2mm pitch
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underfill
Abstract: cte table flip chip substrate ansys darveaux with or without underfill FR4 substrate height and thickness cte table bga cte table 63Sn37Pb application for bt 151 FR4 substrate
Contextual Info: Reliability Study of High-Pin-Count Flip-Chip BGA Yuan Li, John Xie, Tarun Verma and Vincent Wang Altera Corp. 101 Innovation Drive, San Jose, CA 95134 ysli@altera.com Abstract A family of 1.0-mm pitch full-array flip-chip BGAs were developed. These packages vary from 27 to 45 mm in package
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12x10-617x10-66x10-6underfill+9cte table flip chip substrateansys darveauxwith or without underfillfr4 substrate height and thicknesscte table bgacte table63sn37pbapplication for bt 151fr4 substrate
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Technical Brochure
Abstract: 470 micro farad aluminum electrolytic capacitor EIA-469-C disc Piezoelectric crystal 1mhz ultrasonic CAPACITOR 330 electrolytic MICRO FARAD 25 VOLT Kester sn62 tinning 1000 micro farad 16v electrolytic capacitor dielectric absorption mechanism EIA-469 1000 micro farad aluminum electrolytic capacitor
Contextual Info: NOVACAP TECHNICAL BROCHURE Table of Contents A. INTRODUCTION . 2 B. CAPACITOR APPLICATIONS . 3
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technical brochure470 micro farad aluminum electrolytic capacitoreia-469-cdisc piezoelectric crystal 1mhz ultrasonic+6capacitor 330 electrolytic micro farad 25 voltkester sn62 tinning1000 micro farad 16v electrolytic capacitordielectric absorption mechanismeia-4691000 micro farad aluminum electrolytic capacitor
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95Pb
Abstract: FCCSP amkor RDL
Contextual Info: data sheet W A F E R L E V E L PAC K AG I N G CSPnl Features: Wafer Level Packaging CSPnl™ Amkor's wafer level packaging service meets the industry's growing demand for full turnkey assembly and test solutions for CSP Chip Scale Package products. Through the
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XILINX/part marking Hot
Abstract: SMT, FPGA FINE PITCH BGA 456 BALL PC84/PCG84 XCDAISY TT 2076 XC2VP7 reflow profile SPARTAN-II xc2s50 pq208 sn63pb37 solder SPHERES qfn 3x3 tray dimension HQG160
Contextual Info: Device Package User Guide [Guide Subtitle] [optional] UG112 v3.4 June 10, 2009 [optional] R R Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the
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ug112ug072ug075xapp427+10xilinx/part marking hotsmt, fpga fine pitch bga 456 ballpc84/pcg84xcdaisytt 2076xc2vp7 reflow profilespartan-ii xc2s50 pq208sn63pb37 solder spheresqfn 3x3 tray dimensionhqg160
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