95OC Search Results

IPEX

Abstract: 1575.42Mhz gps antenna no patch coax 50ohm I-PEX patch antenna GPS and GSM Antenna
Contextual Info: GSM GPS Combo PATCH Antenna GPS & GSM QuadQuad-Band Antenna for WorldWorld-Wide Use GPS • 1575.42MHz • Gain: 28dB typical • iPex/UFL Connector • Operates from 2.8—5.5V • RHCP: Right Hand Circular • Operating temp –35 to +95oC GSM • Quad Band Antenna

MBR540

Contextual Info: MBR540 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode MBR540 Symbol VRRM V 40 VRMS V 28 Dim. VDC V 40 Characteristics @TC=95oC Inches Min. Max.

SBL850

Abstract: SBL860
Contextual Info: SBL850 thru SBL860 Low VF Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode VRRM V 50 60 SBL850 SBL860 Symbol VRMS V 35 42 Dim. VDC V 50 60 Characteristics @TC=95oC Inches Min. Max. 0.500 0.580

SEMPO ELECTRONIC

Abstract: mbr560
Contextual Info: MBR560 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode MBR560 Symbol VRRM V 60 VRMS V 42 Dim. VDC V 60 Characteristics @TC=95oC Inches Min. Max.

MBR540

Contextual Info: MBR540 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode MBR540 Symbol VRRM V 40 VRMS V 28 Dim. VDC V 40 Characteristics @TC=95oC Inches Min. Max.

SBL850

Abstract: SBL860
Contextual Info: SBL850 thru SBL860 Low VF Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode VRRM V 50 60 SBL850 SBL860 Symbol VRMS V 35 42 Dim. VDC V 50 60 Characteristics @TC=95oC Inches Min. Max. 0.500 0.580

SBL550

Abstract: SBL560
Contextual Info: SBL550 thru SBL560 Low VF Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode VRRM V 50 60 SBL550 SBL560 Symbol VRMS V 35 42 Dim. VDC V 50 60 Characteristics @TC=95oC Inches Min. Max. 0.500 0.580

mbr560

Abstract: DSA0025285
Contextual Info: MBR560 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode MBR560 Symbol VRRM V 60 VRMS V 42 Dim. VDC V 60 Characteristics @TC=95oC Inches Min. Max.

SBL550

Abstract: SBL560
Contextual Info: SBL550 thru SBL560 Low VF Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode VRRM V 50 60 SBL550 SBL560 Symbol VRMS V 35 42 Dim. VDC V 50 60 Characteristics @TC=95oC Inches Min. Max. 0.500 0.580

NT5TU32M16AG-37B

Abstract: NT5TU128M4AE nt5tu64m8 nt5tu64m NT5TU32M16 NT5T nt5tu32m16ag nt5tu64m8af
Contextual Info: NT5TU128M4AB/NT5TU128M4AE Green NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE(Green) ) 512Mb DDR2 SDRAM Features • Write Latency = Read Latency -1 CAS Latency and Frequency • Programmable Burst Length: 4 and 8

100HZ

Abstract: NMA-2001 NMA-2002 NMA-2003 NMA-2004 NMA-2005 NMA-2006 NMA-2007 NMA-2008 NMA-2009
Contextual Info: NMA 2000 NOISE MODULES 100HZ TO 2GHZ DESCRIPTION NMA 2000 OUTPUT CHARACTERISTICS MODEL* FREQUENCY NOISE OUTPUT LEVEL CURRENT FLATNESS mV/ ?V/=Hz dBm/ dBm/HzENR dB mA BAND BAND Typ. Typ. NMA-2001 100Hz-100kHz NMA-2002 100Hz-300kHz ±0.5dB ±0.5dB 10 10 31.6 -27±3.0%

NDT452P

Contextual Info: September 1996 NDT452P P-Channel Enhancement Mode Field Effect Transistor General Description Features -3A, -30V. RDS ON = 0.18Ω @ VGS = -10V. Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

Contextual Info: Product Specifications PART NO.: VL41D1G63B-K0/K9/F8S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM LOW VOLTAGE ECC UNBUFFERED SO-UDIMM 204-PIN Description The VL41D1G63B is a 1Gx72 DDR3 SDRAM high density SO-UDIMM. This dual rank memory module consists of

AM79C900

Abstract: GIGAPHY-SD 1000BASE-LX 1000BASE-SX 1000BASE-X PDH064
Contextual Info: PRELIMINARY Am79761 Physical Layer 10-Bit Transceiver for Gigabit Ethernet GigaPHY -SD DISTINCTIVE CHARACTERISTICS n Gigabit Ethernet Transceiver operates at 1.25 Gigabits per second (Gbps) n Suitable for both Coaxial and Optical Link applications n 10-bit TTL Interface for Transmit and Receive

Contextual Info: Product Specifications PART NO.: VL43B1G63A-K0/K9/F8/E7S REV: 1.1 General Information 8GB 1Gx72 DDR3 SDRAM ECC REGISTERED SO-RDIMM 204-PIN Description The VL43B1G63A is a 1Gx72 DDR3 SDRAM high density RDIMM. This dual rank memory module consists of eighteen CMOS 512Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered

uA 741

Abstract: VSC7135 w508 AN-20 VSC7135QU
Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Data Sheet 1.25Gbits/sec Gigabit Ethernet Transceiver VSC7135 Features • Gigabit Ethernet Transceiver @ 1.25Gb/s • Low Power Operation - 700 mW • Compliant to IEEE 802.3Z PMA • Suitable for Both Coaxial or Optical Link

NDT014

Contextual Info: September 1996 NDT014 N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

c3 SOT-223

Abstract: CBVK741B019 F63TNR F852 NDT452P PN2222A
Contextual Info: September 1996 NDT452P P-Channel Enhancement Mode Field Effect Transistor General Description Features -3A, -30V. RDS ON = 0.18Ω @ VGS = -10V. Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

CVA4401

Contextual Info: Low Power, 400MHz High Speed Triple Buffer CORPORATION CVA4401 FEATURES • Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11000V/µs • Wide Bandwidth. . . . . . . . . . . . . . . . . . . . . . . . . . 400MHz Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA

marking SMD crystal CODES

Abstract: marking code H1 SMD Transistor crystal 26 Mhz marking code e1 smd SMD Marking Code jh marking code SMD mark code H1 diode MARKING CODE CG smd JH transistor marking code ff p SMD Transistor
Contextual Info: SM8T Series Miniature SMD Crystal January 2008 • Pletronics’ SM8T Series is a miniature low profile surface mount crystal. • Package is ideal for automated surface mount assembly and reflow practices. • Tape and Reel packaging • • • • 20 MHz to 80 MHZ

Contextual Info: V59C1G01 808/168 QC HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 37 3 25A 25 19A DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4) 3.75ns 3.75ns 3.75ns

is46dr32801a-5bbla1

Abstract: 126-ball IS46DR32801A
Contextual Info: IS43DR32800A, IS43/46DR32801A 8Mx32 256Mb DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS)

IS43DR83200A

Abstract: IS43DR16160A-3DBLI datasheet IS43DR16160A-37CBLI IS43DR83200A-37CBLI IS43DR32160A DDR2 x32
Contextual Info: IS43DR83200A IS43/46DR16160A, IS43DR32160A 32Mx8, 16Mx16, 16Mx32 stacked die DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O (SSTL_18-compatible) • Double data rate interface: two data transfers per clock cycle

H5TQ2G83

Abstract: DDR3L JEP147 "2Gb DDR3 SDRAM" CL10 CL11 DDR3-1066 DDR3-1333 hynix ddr3 82ball
Contextual Info: 2Gb DDR3 SDRAM 2Gb DDR3 SDRAM Lead-Free&Halogen-Free RoHS Compliant H5TQ2G43AFR-xxC H5TQ2G83AFR-xxC * Hynix Semiconductor reserves the right to change products or specifications without notice. Rev. 1.0 / Dec. 2009 1 Revision History Revision No. History