SBL550 Search Results

SBL1040T

Abstract: SBL4040PT TO-247ad SBL530 SBL535 SBL540 SBL545 SBL550 SBL560 SBL830
Contextual Info: Schottky Barrier Diodes Low VF Schottky Barrier Diodes Tj=-40°C~+125C, Tjm=+125°C Òype VR=VRRM IFAV Electrical Characteristics IR @ VR=VRRM IFSM 125°C 125°C A mA mA V A SBL530 30 5 175 0.5 SBL535 35 5 175 SBL540 40 5 SBL545 45 SBL550 VFmax @ IFM Package Style

Contextual Info: SPICE MODELS: SBL530 SBL535 SBL540 SBL545 SBL550 SBL560 SBL530 - SBL560 5.0A SCHOTTKY BARRIER RECTIFIER Features • · Schottky Barrier Chip · · · · Low Power Loss, High Efficiency · Lead Free Finish, RoHS Compliant Note 3 Guard Ring Die Construction for

SBL550

Abstract: SBL560
Contextual Info: SBL550 thru SBL560 Low VF Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode VRRM V 50 60 SBL550 SBL560 Symbol VRMS V 35 42 Dim. VDC V 50 60 Characteristics @TC=95oC Inches Min. Max. 0.500 0.580

SBL530

Abstract: SBL535 SBL540 SBL545 SBL550 SBL560
Contextual Info: SBL530 - SBL560 5.0A SCHOTTKY BARRIER RECTIFIER SPICE MODELS: SBL530 SBL535 SBL540 SBL545 SBL550 SBL560 Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability

SBL550

Abstract: SBL560
Contextual Info: SBL550 thru SBL560 Low VF Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode VRRM V 50 60 SBL550 SBL560 Symbol VRMS V 35 42 Dim. VDC V 50 60 Characteristics @TC=95oC Inches Min. Max. 0.500 0.580

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

SBR545

Contextual Info: POWER LITEM?I SEMICONDUCTORS SBL5 SBR5 SERIES V O LT A G E RANGE _ 30 to 60 V olts 5 am p s, s c h o t t k y b a r r i e r r e c t i f i e r s C U R R EN T 5.0 Amperes TO-220 FEATURES • Plastic package has U /L • Flam m ability Classification 9 4 V 0 •

SBL530

Abstract: SBL545 SBL550 SBL560
Contextual Info: SBL530 - SBL560 5.0A SCHOTTKY BARRIER RECTIFIER Features • · Schottky Barrier Chip · · · · Low Power Loss, High Efficiency · Lead Free Finish, RoHS Compliant Note 3 Guard Ring Die Construction for Transient Protection TO-220AC L High Surge Capability

smd marking 911 zener

Abstract: d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt
Contextual Info: RETURN TO SHORT FORM TABLE OF CONTENTS ################################### RETURN TO SHORT FORM INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Short Form Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 September 1999 Specifications are subject to change without notice.

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

melf diode marking

Abstract: A180-WLA RS503s SBR130S3 Schottky melf hall sensor 35l 5KE91A-B PR1005G-A GBPC3504L STPR2020CT
Contextual Info: PCN PART NUMBER LISTING Part Number PCN Title Rel date Comments 1.5KE100A-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100A-T 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-T 1049 Lead-Free Lead Finish

Contextual Info: SBL530 - SBL560 5.0A SCHOTTKY BARRIER RECTIFIER Features • · Schottky Barrier Chip · · · · Low Power Loss, High Efficiency · Lead Free Finish, RoHS Compliant Note 3 Guard Ring Die Construction for Transient Protection TO-220AC L High Surge Capability

1660CT

Abstract: b550 transistor MB560 B550 transistor datasheet MB1550 1060ct 1803 5a 1560CT
Contextual Info: MB560 SCHOTTKY DIE SPECIFICATION Revision 5 8/25/2000 General Description Low Ir 60V 5A Single Anode ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Average Rectified Forward Current Ir = 0.1 mA Maximum Instantaneous Forward Voltage @ 5 Amperes, 25 0 @ @ 8 Amperes, 25

b550

Abstract: B550 transistor datasheet b550 transistor SB360 diode SB360 SR1060 SR306 SR506 SS36 mb360
Contextual Info: MB360 SCHOTTKY DIE SPECIFICATION Revision 4 5/25/2000 General Description Low Ir 60V 3A Single Anode SYM Spec. Limit VRRM IFAV 60 3 63 Volt Amp VFMAX 0.61 0.6 Volt VFMAX 0.69 0.68 Volt IRMAX 0.1 Cj MAX 250 pF Nonrepetitive Peak Surge Curren IFSM 100 Operating Juntion Temperatur

Contextual Info: PRODUCT CHANGE NOTICE Contact Date: Implementation Date: Alert Category: Alert Type: July 24, 2006 August 1, 2006 Discrete Semiconductor Marking Change DCS/PCN-1046 PCN #: PCN #: 1046 TITLE Improved Marking IMPACT NONE DESCRIPTION OF CHANGE Upgrade part marking to Laser marking from ink markings

SBL530

Abstract: SBL5100
Contextual Info: BLGALAXY ELECTRICAL SBL530 - - - SBL5100 VOLTAGE RANGE: 30 - 100 V CURRENT: 5.0 A SCHOTTKY BARRIER RECTIFIER FEATURES TO-220AC Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability

FBU4K

Abstract: FBU4J PBL302 1DQ04 2FBP06 FBU4G 1N4007 FAGOR FBU8K KBPC251OW 1IN5406
Contextual Info: RECTIFIER INDEX C R O SS REFERENCE LITE-ON MOTOROLA Gl P/N P/N P/N 1 N4001 1N 4001 1N4001G IR P/N FU JI SGS-THOMSON VARO FAGOR P/N P/N P/N P/N 1N4001 1N4001 1N4001G L 126 1N4002 1N4002G 1 N4002 10D1 ERB12-1 1N4001F 148 1N4002 150 126 1 N 4 0 0 2 GP 1N4002GL

SBL530

Abstract: SBL545 SBL550 SBL560
Contextual Info: SBL530 - SBL560 5.0A SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop

Contextual Info: SBL530 - SBL560 5.0A SCHOTTKY BARRIER RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward

SBR 1045

Abstract: br1040 BR2045CT BR745 BR4040 BR1060 DO-201AO SBR845 BR1640 SBR840
Contextual Info: LITEM? I SCHOTTKY BARRIER I RECTIFIERS 1.0 A M P E R E TO 40 A M P E R E S 20 VOLTS TO 60 VOLTS '^ X ^ - ^ P R V \ TYPE LOW C U R R E N T A X IA L L E A D lo {At t y pe n o SINGLE C U RREN T MEDIUM TYPE DUAL CURRENT ^ 20 30 35 40 45 50 60 CASE N. 1 N 5 81 7

AP3039AM

Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
Contextual Info: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)

SBL530

Abstract: SBL535 SBL540 SBL545 SBL550 SBL560
Contextual Info: LITE-ON SEMICONDUCTOR SBL530 thru SBL560 REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 5.0 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AC FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

Contextual Info: SBL530-SBL560 Vishay Lite-On Power Semiconductor 5.0A Schottky Barrier Rectifiers Features • S c h o ttk y b a rrie r ch ip • G u a rd ring die c o n s tru c tio n fo r tra n s ie n t p ro te c tio n • L o w p o w e r loss, hig h e ffic ie n c y •

SBLF10100CT

Abstract: SBLF1030CT-SBLF10100CT SB320-SB3A0 sbl20100 SMD 1N60 RN1Z 1N4139-1N4146 MTZJ 188 US2A-US2M LR kbpc3510
Contextual Info: CONTENTS TABLE OF CONTENTS ……………………C NUMERICAL INDEX ……………………L SYMBOLS AND TERMS ……………………S HIGH RELIABILITY EXPERIMENT ……………………U trr REVERSE RECOVERY TIME MEASUREMENT CIRCUIT ……………………V