9512N Search Results

M5 DIODE 22-35 L

Abstract: 95-18N1 DIODE 22-35 L DIODE RECTIFIER BRIDGE SINGLE 22-35 95-16N1 9512 ixys mdd
Contextual Info: Diode Modules MDD 95 IFRMS = 2 x 180 A IFAVM = 2 x 120 A VRRM = 800 - 1800 V VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 IFSM TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 Maximum Ratings 180 A 120 A 50/60 Hz, RMS

Contextual Info: M O SEL V tTE LiC V53C8512N 3.3 VOLT, LO W POWER 512K x 8 AN D 5 1 2 K x 9 B IT FA S T PAGE MODE CMOS DYNAMIC RAM PRELIM INARY HIGH PERFORMANCE V53C8512N 60/60L 70/70L M ax. R A S A cce ss T im e, Orac 6 0 ns 70 ns M ax. C o lum n A d dre ss A cce ss T im e , tCAA)

9508N

Abstract: ixys mdd MS170 95-18N1 2x180A 9518n
Contextual Info: MDD 95 IFRMS = 2x 180 A IFAVM = 2x 120 A VRRM = 800-2200 V Diode Modules VRSM VRRM V V 900 1300 1500 1700 1900 2100 2300 800 1200 1400 1600 1800 2000 2200 Type Symbol IFRMS IFAVM Test Conditions TVJ = TVJM TC = 105°C; 180° sine IFSM TVJ = 45°C; VR = 0 TVJ = TVJM

MDD 500-22N1

Abstract: MDO 500-12N1 500-22N1 255-16N1 26-14N1B 500-20N1 MDD 172-14N1
Contextual Info: Diode Modules, J - L 1 » 1-N— 11 I L w 1 Single and Dual -J MDO lFAV= 36-560 A v Type I FAV @ T'C V A X 800 1200 1400 1600 1800 800 1200 1400 1600 1800 800 1200 1400 1600 1800 800 1200 1400 1600 1800_

ixys MDD 26 - 14

Abstract: MDD 500-22N1 MDO 220-14N1 ixys MDD 172 12 DIODE 22-35 L M5 DIODE 22-35 L ixys MDD 26 14 MDD 500-12N1 ixys MDD 172 16 IXYS MCC 310
Contextual Info: Rectifier Diode Modules Contents 2000 Type Page 2200 1800 1600 1200 A VRRM/VDRM V 800 IFAVM 1400 Package style Diode Modules 1 1 MDA 72 D8 - 11 36 l l l l l MDD 26 D8 - 2 64 l l l l l MDD 44 D8 - 5 l l l l l MDD 56 D8 - 8 l l l l l MDD 72 D8 - 11 120 l l l l l l l

B2HKF

Abstract: VUM24-05N 95-16N07 VHF3612IO5 vhf28-14io5 12io1 vhf28-08 vhf15-16io5 VHFD29-08IO1 VHF36-12IO5
Contextual Info: 1~ Rectifier Bridges 1~ Rectifier Brida es with Standard Diodes, B2U Type ► New ► VB0 95-08N07 VBO 95-12N07 VBO 95-14N07 ► VBO 95-16N07 VBO 95-18N07 ► V B 0 105- 08N07 ► V B 0 105- 12N07 V B 0 105- 14N07 VB0105- 16N07 VB0105- 18N07 VBO125 08N07 >- V B 0 125 12NC7

40n80

Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Contextual Info: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18

Contextual Info: MOSEL-VITELIC V53C8512N/9512N 3.3 VOLT, LOW POWER 512K x 8 AND 512K x 9 BIT FAST PAGE MODE CMOS DYNAMIC RAM PRELIMINARY HIGH PERFORMANCE V53C8512N/9512N 60/60L 70/70L Max. RAS Access Time, tRAC 60 ns 70 ns Max. Column Address Access Time, (I^ aa)

M5 DIODE 22-35 L

Contextual Info: MDD 95 IFRMS = 2x 180 A IFAVM = 2x 120 A VRRM = 800-2200 V Diode Modules VRSM VRRM V V 900 1300 1500 1700 1900 2100 2300 800 1200 1400 1600 1800 2000 2200 Type Symbol IFRMS IFAVM Test Conditions TVJ = TVJM TC = 105°C; 180° sine IFSM TVJ = 45°C; VR = 0 TVJ = TVJM

Contextual Info: bHE » MOSEL- VITELIC • DDGHD'ìG 3 3 e] « M O V I V53C8512N/9512N 3.3 VOLT, LOW POWER 512K x 8 AND 5 1 2 K x 9 BIT FAST PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 60/60L 70/70L Max. RAS Access Time, tRAc 60 ns 70 ns Max. Column Address Access Time, (tCAA)

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

MDD 500-12N1

Abstract: 142-12N1 26-16N1B 172-14N1 72-08N1 172-18N1 500-14N1 MDD 500-14N1 56-18N1 56-14N1B
Contextual Info: , Diode Modules Single and Double lFAV = 36-500 A Type ^th JC *FSM p mQ 0.8 6.0 K/W K/W 1.0 0.2 MDD MDD MDD MDD MDD 26-08N1B 26-12N1B 26-14N1B 26-16N1B 26-18N1B 800 1200 1400 1600 1800 36 MDD MDD MDD MDD MDD 44-08N1B 44-12N1B 44-14N1B 44-16N1B 44-18N1B 800

Contextual Info: □IXYS Diode Modules V ’ RSM V RRM 900 1300 1500 1700 1900 ^FRMS ^FAVM MDD MDD MDD MDD MDD "^"vj — ^~VJM VR= 0 Ji2dt L- H 95-08N1 B 95-12N1 B 95-14N1B 95-16N1B 95-18N1B * TVJ = 45° C VR= 0 TVj — VR= 0 t t t t = = = = 10 ms 8.3 ms 10 ms 8.3 ms 50 (60

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

MDD 500-22N1

Abstract: ixys MDD 26 - 14 ixys MDD 172 12 B2U 250 S2MD 2235nm ixys MCC 700 IXYS MCC 550 mcc 550 ixys MDD 500-12N1
Contextual Info: Rectifier Diode Modules Contents 2000 Type Page 2200 1800 1600 1200 A VRRM/VDRM V 800 IFAVM 1400 Package style Diode Modules 1 4 1999 IXYS All rights reserved MDD 26 D6-2 ● ● ● ● ● MDD 44 D6-5 95 ● ● ● ● ● MDD 56 D6-8 ● ● ● ● ●

mdd 42

Abstract: diode mdd 42 MD0500 MDD142-08N1 172-14N1 MDD72-12N1B MDD5 PAGE-42 MDD72 MDD72-08N1B
Contextual Info: Diode Modules, Single and Double f ‘ 1 FAV = 36-500 A MDO Type FSM New 45°C 10 ms A MDD26-08N1B MDD26-12N1B MDD26-14N1B MDD 26-16N1B MDD26-18N1B 100 60 800 1200 1400 1600 1800 36 800 59 100 100 1150 100 150 1400 p 650 m iî °C 6.0 150 K/W 1.0 0.2 24 Fig. 24 TO-240 AA

DSE 130 -06A

Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Contextual Info: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01

MAX-7Q 0

Contextual Info: M O S E L V IT E U C V53C8512N 3.3 VOLT, LOW POWER 5 1 2 K x 8 AND 5 1 2 K x 9 BIT FAST PAGE MODE CMOS DYNAMIC RAM PRELIMINARY HIGH PERFORMANCE V53C8512N 60/60L 70/70L Max. RAS Access Time, Iraq 60 ns 70 ns Max. Column Address Access Time, (tCAA) 30 ns 35 ns

Contextual Info: VBO 95 IdAV = 92 A VRRM = 800-1600 V Single Phase Rectifier Bridge in ECO-PAC 2 Preliminary data VRSM VRRM V V 900 1300 1500 1700 800 1200 1400 1600 PS16 Types ~L 9 ~ K10 VBO 95-08NO7 VBO 95-12NO7 VBO 95-14NO7 VBO 95-16NO7 Symbol Test Conditions IdAV ① TC = 100°C, module