80JIS Search Results

VQ1000P

Abstract: VN10L siliconix VN10KM VN0610L VN10KE VN10KM VN10LE VN10LM VN2222L VQ1000J
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) 60 60 5.0 5.0 240 240 170 170 6.0 10.0 6.0 Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 0.3 0.25 0.3 0.25 0.3 0.25

VN0300M

Abstract: siliconix VN10KM VN0606M 25XX VN0300D VP1001P VQ1001J VQ3001J VQ3001P VQ7254J
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25

757N logarithmic amplifier analog devices

Abstract: AD574JD 757N li log 757P
Contextual Info: □ ANALOG DEVICES 6-Decade, High Accuracy Log Ratio Amplifiers MODEL 757N, 757P FEATU RES 6 Decade Operation — 1 n A to 1 m A 1/2% Log Conformity — 10nA to 10l juA Symmetrical F E T Inputs Voltage or Current Operation Temperature Compensated A P P L IC A T IO N S

Contextual Info: RFK25N18, RFK25N20 Semiconductor Data Sheet October 1998 25A, 180V and 200V, 0.150 Ohm, N-Channel Power MOSFETs File Number 1500.3 Features • 25A, 180V and 200V These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such

IRF9640

Contextual Info: H AFRFRIS S E M I C O N D U C T O R IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM -9A and -11 A, -150V and -200V, 0.5 and 0.7 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -9A a n d -11 A,-150V and-200V These are P-Channel enhancem ent mode silicon-gate

VP0104

Abstract: VP0109 VP0109ND TELEDYNE VP0104N3 VP0104ND VP0106 VP0106N3 VP0106ND VP0109N3
Contextual Info: 2fi£ D T E LE DY NE COMPONENTS • S11?bQd GD0b4S2 - d l T-29-25 VP0104, VP0106 VP0109 SEMICONDUCTOR P-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION TO-22CAA TO-92 Plastic Package VP0104N3 VP0104ND -40V, 8.0 ohm

Contextual Info: H a r r IRFP250, IRFP251, IRFP252, IRFP253 i s s e m i c o n d u c t o r 27 A and 33A, 150V and 200V, 0.085 and 0.12 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 27A and 33A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate

Contextual Info: P *3 3 S IRFR220, IRFR221, IRFR222, IRFU220, IRFU221, IRFU222 3.8A and 4.6A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.8A and 4.6A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate

rf1s644s

Contextual Info: HARRIS S E M I C O N D U C T O R IRF644, IRF645, IRF646, IRF647, RF1S644, RF1S644SM 13A and 14A, 250V and 275V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 13A and 14A, 250V and 275V • High Input Impedance These are N-Channel enhancement mode silicon gate

C5651

Abstract: S56S
Contextual Info: High Performance Dual Channel Current Mode Controllers with ENABLE D escription l ’ho C S - 5 6 5 1 /C S -5 6 6 I are high pe r­ formance, fixed frequency, dual cu r­ rent m ode controllers specifically designed for O ff-Lin e and DC' to I X ’ converter applications. T hey offer

Contextual Info: calodlc High Speed DMOS N-Channel Switch CORPORATION SD403 FEATURES DESCRIPTION • • • • The Calogic SD403 is an N-Channel Enhancement-Mode Lateral DMOS FET. This product has very low capacitance, Crss < 0.4pf typical allowing for high speed switching (tr 1ns).

29V040

Contextual Info: S G S -1 H 0 M S 0 N 6 fflD ^©HlLll g'ìnE(S R!lfl(gi M29V040 LOW VOLTAGE SINGLE SUPPLY 4 Megabit (512K x 8, Sector Erase) FLASH MEMORY PRODUCT PREVIEW FAST ACCESS TIME: 120ns 3.3V ± 0.3V SUPPLY VOLTAGE for PROGRAM and ERASE OPERATIONS 3.3V ± 0.3V SUPPLY VOLTAGE in READ

L1N08LE

Abstract: Rlp1N08le
Contextual Info: RLP1N08LE S e m ic o n d u c to r April 1999 Data Sheet File Num ber 2252.3 Features 1A, 80V, 0.750 Ohm, Current Limited, N-Channel Power MOSFET • 1A, 80V T he R LP 1N 08L E is a s e m i-sm a rt m on olithic po w e r circu it w h ich in co rp o ra te s a lateral b ipo lar transistor, tw o resistors,

2SK2808-01MR

Contextual Info: SPECIFICATION DEVICE NAME : Power MOSFET TYPE NAME 2SK2808-01 MR - SPÊC.NO. Fuji Electric CoMLtd. This Specification is subject to change without notice. DATE ' NAME APPROVED Fuji Electric Co.,Ltd. CHECKED I ' ' I DWG. NO. D RA W N / 1/0 Y 0257 -R -00 4a

IRFP460

Contextual Info: S IRFP460, IRFP462 Semiconductor y 20A and 17A, 500V, 0.27 and 0.35 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 20A and 17A, 500V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IFR320

Contextual Info: w vys S IRF320, IRF321, IRF322, IRF323 Semiconductor y y 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channei Power MOSFETs July 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate

18P06P

Abstract: Q67040-S4189
Contextual Info: SPD 18P06P SPU 18P06P Preliminary Data SIPMOS Small-Signal-T ransistor Features • P Product Summary Channel • Enhancement mode • Avalanche rated ^DS Drain-Source on-state resistance ^bs on 0.13 -18.6 b Continuous drain current V -60 Drain source voltage

Contextual Info: H a r r IRFP450, IRFP451, IRFP452, IRFP453 i s s e m i c o n d u c t o r 12A and 14A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs January 1998 Description Features 12A and 14A, 450V and 500V High Input Impedance These are N-Channel enhancement mode silicon gate

schematic diagram 12v ac regulator

Contextual Info: Ul ILAk!_ TECHNOLOGY LT1Q36M/LT1036C Logic Controlled Regulator FCRTUR6S D€SCAIPTIOn • Two Regulated Outputs +12V at 3A +5Vat75mA ■ 2% Output Voltage Tolerance ■ 60dB Ripple Rejection ■ 0.7% Load Regulation ■ TTL and CMOS Compatible Logic Control

irf9530

Abstract: irf9532 JEDEC TO-263A IRF9531
Contextual Info: H A F R F R IS S E M I C O N D U C T O R IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V These are P-Channel enhancement mode silicon gate

034q

Abstract: Thermal Resistance vs. Mounting Pad Area TB370 AN7254 AN7260 ITF86110DK8T MS-012AA
Contextual Info: IT F 8 6 110 D K 8 T in t e r r ii J a n u a ry . m i Data Sheet 7.5A, 30V, 0.025 Ohm, Dual N-Channel, Logic Level, Power MOSFET File Number 4807.2 Features • Ultra Low On-Resistance ‘ Packaging r D S O N = 0.025£2, 10V V Gs = ‘ rDS(ON) = 0.034£2, VGs = 4.5V

E43 SHUNT REGULATOR

Abstract: CS-3865CDW16 CS-3865CN16
Contextual Info: CS-3865C H igh Performance D ual Channel Current M ode Controller w ith ENABLE D escription T h e CS-3865C is a h ig h p e rfo r­ m an ce, fix ed freq u e n cy , d u a l c u r­ re n t m o d e co n tro lle r. It is u se d in O ff-L ine a n d D C to D C co n v e rte r

st10 Bootstrap

Contextual Info: ST10F163 16-bit MCU with 128KByte Flash Memory DATA SHEET • High performance CPU ■ High performance 16-bit CPU with 4-stage pipeline ■ 80ns instruction cycle time @ 25MHz CPU clock ■ 400 ns multiplication 1 6 x 1 6 bits ■ 800 ns division (32 /1 6 bit)

IA17

Contextual Info: / T 7 S G S -1H 0M S 0N M29W004T *• 7 /. HBSBEHllgUMWlIgg_ M29W004B 4 Mb x8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY ■ 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME: lO^is typical