800 COOLMOS Search Results

Contextual Info: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous

Contextual Info: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous

13N80C

Contextual Info: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 13N80C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous

SPA04N80C3

Contextual Info: SPA04N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 1.3 Ω • Extreme dv/dt rated

diode 71A

Abstract: SPA06N80C3
Contextual Info: SPA06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.9 Ω • Extreme dv/dt rated

SPA11N80C3

Contextual Info: SPA11N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated

SPP06N80C3

Abstract: 06N80C3
Contextual Info: SPP06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.9 Ω • Extreme dv/dt rated

spw11n80c3

Abstract: 11n80c
Contextual Info: SPW11N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated

Contextual Info: ADVANCE TECHNICAL INFORMATION Power MOSFET ISOPLUS220TM IXKC 13N80C VDSS = 800 V = 13 A ID25 Ω RDS on = 290 mΩ Electrically Isolated Back Surface Low RDS(on), High Voltage, CoolMOSTM Superjunction MOSFET Preliminary Data Sheet Symbol Test Conditions ISOPLUS 220

04n80

Abstract: 04N80C3 SPP04N80C3
Contextual Info: SPP04N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 1.3 Ω • Extreme dv/dt rated

Contextual Info: ADVANCE TECHNICAL INFORMATION Power MOSFET ISOPLUS220TM IXKC 13N80C VDSS = 800 V ID25 = 13 A Ω RDS on = 290 mΩ Electrically Isolated Back Surface Low RDS(on), High Voltage, CoolMOSTM Superjunction MOSFET Preliminary Data Sheet Symbol Test Conditions ISOPLUS 220

power switching

Abstract: ISO264 ISO264TM ID90
Contextual Info: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET IXKG 25N80C ISO264TM Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous ±20

transistor SPP08N80C3

Abstract: 08N80C3 SPP08N80C3 08N80
Contextual Info: SPP08N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.65 Ω • Extreme dv/dt rated

11n80c

Abstract: 11N80C3 SPP11N80C3 max8210
Contextual Info: SPP11N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated

Q67040-S4351

Abstract: SPP06N80C2
Contextual Info: Preliminary data SPP06N80C2 Cool MOS Power Transistor COOLMOS Power Semiconductors Feature Product Summary • New revolutionary high voltage technology · Ultra low gate charge VDS 800 V · Periodic avalanche rated RDS on 900 mW · Extreme dv/dt rated

IXKR25N80C

Contextual Info: IXKR 25N80C Advanced Technical Information COOLMOS * Power MOSFET ID25 = 25 A VDSS = 800 V RDS on = 125 mW in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247TM D * G E153432

02N80C3

Contextual Info: SPP02N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 2.7 Ω • Extreme dv/dt rated

Contextual Info: LED System Driver IC ICLS8023Z Off-Line LED Current Mode Controllers with Integrated 800 V CoolMOS & Startup Cell Data Sheet Version 1.0, 2011-09-26 Industrial & Multimarket Edition 2011-09-26 Published by Infineon Technologies AG 81726 Munich, Germany

Trimble DSS 500

Contextual Info: LED System Driver IC ICLS8023Z Off-Line LED Current Mode Controllers with Integrated 800 V CoolMOS & Startup Cell Data Sheet Version 1.0, 2011-09-26 Industrial & Multimarket Edition 2011-09-26 Published by Infineon Technologies AG 81726 Munich, Germany

smd transistor marking 12W

Abstract: smd transistor code 12w 06N80C2 TRANSISTOR SMD MARKING CODE 12w smd transistor 12W 98 P-TO252 SPD06N80C2 SMD TRANSISTOR MARKING 2c transistor SMD 12W smd 12w 98
Contextual Info: Preliminary data SPD06N80C2 Cool MOS Power Transistor COOLMOS Power Semiconductors Feature • New revolutionary high voltage technology · Worldwide best RDS on in TO252 · Product Summary VDS 800 V Ultra low gate charge RDS(on) 900 mW · Periodic avalanche rated

06N80C3

Abstract: Q67040-S4351 SPP06N80C3
Contextual Info: SPP06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature Product Summary •=New revolutionary high voltage technology • Ultra low gate charge •=Periodic avalanche rated VDS 800 V RDS on 900 mΩ ID • Extreme dv/dt rated

Contextual Info: Target data sheet SPW17N80C2 Cool MOS Power Transistor COOLMOS Power Semiconductors Feature Product Summary • New revolutionary high voltage technology · Ultra low gate charge VDS 800 V · Periodic avalanche rated RDS on 290 mW · Extreme dv/dt rated

17N80C3

Abstract: SPP17N80C3 17n80 17n80c SPB17N80C3
Contextual Info: SPP17N80C3 SPB17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS 800 V RDS(on) 290 mΩ

zetex product

Abstract: PWM PFC LLC Controller
Contextual Info: LED Controller IC ICLS8082G Offline LED Controller For PFC And Dimming With Integrated 800 V CoolMOS Data Sheet for LED Controller IC Rev1.0, 2011-03-01 Industrial and Multimarket Edition 2011-03-01 Published by Infineon Technologies AG 81726 Munich, Germany