7TS TRANSISTOR Search Results

C3317

Abstract: S95 SMD 1S91 BDS950 BDS952 BDS954 BDS956
Contextual Info: PHILIPS INTERNATIONAL SbE D • 7110fl2b D O M B n b 7TS « P H I N Philips Components Data sheet status Product specification date of issue April 1991 BDS950/952/954/956 P » - '7 PNP Silicon epitaxial base power transistors D ESCRIPTIO N PINNING - SOT223

ua 471

Abstract: BF469 BF471 BF470 471 npn
Contextual Info: BF469, BF471 BF469, 471 NPN PLASTIC POWER TRANSISTORS Complementary BF470, 472 Video Applications in TV PIN CONFÎGURATION 1. EM IT TER 2. COLLECTOR 3. BASE MIN. DIM MAX. A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 2.25 TYP. E F 0.49 I 0.75 G 4.5 TYP. L 15.7 TYP.

DTA124GS

Contextual Info: DTA124GU/DTA124GK/DTA124GS/DTA124GF DTA124GL/DTA124GA/DTA124G V b ~7 > V 7* 7 /Transistors DTA124GU/DTA124GK/DTA124GS/DTA124GF DTA124GL/DTA124GA/DTA124GV h > v X *7 X < "j 5VTransistor Switch Digital Transistors Includes Resistors • \T>±l2I/Dimensions (Unit: mm)

Contextual Info: • 7^5^537 O O g ^ f l T ■ _ SGS-TTiOMSON 1^ 10 g^@[l[L[i ir^@[i0(g i_ B U Z 6 0 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTOR S G S-THOMSON 3GE J> TYPE V DSS f*DS(on b BUZ60 400 V 1.0 fl

Contextual Info: b b S E ' m OOEflETH fib'? BU706 BU706D b^E » N AMER PHILIPS/DISCRETE SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed switching npn transistors in a plastic envelope intended fo r use in horizontal deflection circuits o f colour television receivers and line operated switch-mode applications. The

B0441

Abstract: BD439 BD440 BD441 BD442
Contextual Info: BD439, BD441 BD440, BD442 BD439, 441 BD440, 442 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium Power Linear and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM 7.8 B 10.5 10.8 C 2.4 2 .7 D 0.7 0 .9 A p i­

Contextual Info: SGS-THOMSON MigimiCTMllgi STZT2907 STZT2907A MEDIUM POWER AMPLIFIER . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING ciRCurrs • GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER

BCW60A

Abstract: BCW60B BCW60C BCW60D
Contextual Info: BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistors M arkin g BCW 60A = AA BCW 60B '= AB BCW 60C = AC BCW 60D = AD P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m _3.o_ 2.8 0.48 0.38 0.14 3 2.6

Contextual Info: BDX45 BDX46 BDX47 P-N-P SILICON PLANAR DARLINGTON TRANSISTORS Silicon p-n-p planar Darlington transistors fo r industrial switching applications, e.g. print hammer, solenoid, relay and lamp driving. Encapsulated in a TO-126 plastic envelope with collector connected

Contextual Info: bRE D N AMER P H IL IP S /D IS C R E T E • bbS3R31 0Q3Qb65 D5T « A P X Product Specification Philips Semiconductors B U K456-200A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: • “ 7# 7^2^537 Q0HbQ33 QST ■ S 6 T H _ S C S -T H O M S O N K i» [L [l m M K S S T K 3 N 50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK3N50 ■ ■ ■ ■ . V dss R D S (on Id 500 V < 3.8 Q 2.7 A TYPICAL RDS(on) = 2.5 i2

transistor 8BB smd

Abstract: smd diode marking 3fs smd code book B3 transistor transistor marking smd 7c smd diode 77a q1333su BUZ100S smd DIODE 3FS H7 marking code smd smd transistor c015
Contextual Info: BUZ 10OS In fin e o n technologie» SIPMOS Power Transistor Product Summary Features 55 V • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.015 Í2 77 A • dv/df rated

BLY92C

Abstract: mfc capacitor philips
Contextual Info: bSE J> • PHILIPS INTERNATIONAL 7110fiEb DObabST 4T1 HIPHIN BLY92C . y v. V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is guaran­

DIODE S3V 70

Abstract: DIODE S3V 52 MOSFET 6A irfmg50 IRFMG50 IRFMG50D LSE 0149
Contextual Info: Data Sheet No. PD-9.711A INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMG5Q N-CHANNEL 1000 Volt, 2.0 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

tic 120

Abstract: tic120 transistor t5c BUK993-60A BUK993 transistor tic 698
Contextual Info: Philips Components Data sheet status Preliminary specification date ol issue March 1991 BUK993-60A PowerMOS transistor Logic Level SensorfET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a 5 pin plastic

Contextual Info: Philips Semiconductors • I bbS3T31 DDS^flSS MTl M A P * Product specification BLF147 VHF power MOS transistor - AnER PHIi-lPS/]>ISCRETE FEATURES bTE J> PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability

CD 9088

Contextual Info: What WL'EM HEW LETT PACKARD Avantek Products Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC 518 Series Features • Frequency Range: 5 to 500 MHz • High Dynamic Range • High Power Output: +24.5 dBm Typ • Noise Figure: 5.5 dB (Typ)

Transistor TT 2144

Abstract: SMP220
Contextual Info: Preliminary Data Sheet 6.039 IN T E R N A T IO N A L R E C T IF IE R I O R FULLY P R O _T E C T E D — _ D M O S P O W E R S W IT C H SMARTFET Transistor General Description: Rating Summary: The IRSF3011 is a 3 terminal monolithic SMART POWER MOSFET with built in short circuit, over­

Contextual Info: ^ 8368602 — - - r— —T l SOLITRON DEV ICES D F |f l3 b ô L 0 E Q00133L, 7 I N C _ • _ olitron Devices, Inc. CASE: Voltage, Emitter to Base V EBQ too 6 0 .

Contextual Info: SONY CXD1175AM/AP 8-bit 20MSPS Video A/D Converter CMOS Description The CXD1175A is an 8-bit CMOS A/D converter for video use. The adoption of a 2-step parallel system achieves low consumption at a maximum conversion speed of 20MSPS minimum, 35MSPS typical.

Contextual Info: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA8050AK TENTATIVE DATA 1.5A MOTOR DRIVER WITH BRAKE FUNCTION The T A 8050A K is a 1.5A bi-directional DC motor driver and it can switch forward, reverse, stop and brake mode with input D ll and DI2. Protective functions are built in

Contextual Info: b3E J> m 45S 1 Ö 7S GATE ARRAYS QDD1Q2G ^ 5 5 • H 0 N 3 Honeywell HONE YÜ1ELL/S S E C RICMOS SEA OF TRANSISTORS GATE ARRAY HR1060 FEATURES RADIATION HARDNESS OTHER • Total Dose Hardness of >1x106 rad Si02 • Wafers from DESC certified QML 1.2 ¡im process

volterra

Abstract: VOLTERRA VT b2c2 poon Modelling VOLTERRA -VSC1294-LF.D.G.B BFR520 CT-20 BFR520 transistor quasi
Contextual Info: 1994 Bipolar/BiCMOS Circuits & Technology Meeting 3.2 Advanced modelling of distortion effects in bipolar transistors using the Mextram model L.C.N. de Vreede, H.C. de Graaff, K. Mouthaan, M. de Kok, J.L. Tauritz and R.G.F. Baets Delft University of Technology, Dept, of Electrical Engineering

Contextual Info: SGS-THOMSON L6506 L6506D CURRENT CONTROLLER FOR STEPPING MOTORS ADVANCE DATA DESCRIPTION The L6506/D is a linear integrated circuit designed to sense and control the current in stepping motors and similar devices. When used in conjunction with the L293, L298, L7150, L6114/L6115, the chip set