7TS TRANSISTOR Search Results

C3317

Abstract: S95 SMD 1S91 BDS950 BDS952 BDS954 BDS956
Contextual Info: PHILIPS INTERNATIONAL SbE D • 7110fl2b D O M B n b 7TS « P H I N Philips Components Data sheet status Product specification date of issue April 1991 BDS950/952/954/956 P » - '7 PNP Silicon epitaxial base power transistors D ESCRIPTIO N PINNING - SOT223

Contextual Info: BF469,471 NPN PLASTIC POWER TRANSISTORS Complementary BF470, 472 Video Applications in TV PIN CO N FIG U R ATIO N 1. EM ITTER 2. COLLECTOR 3. BASE MIN. DIM MAX. A 7.4 7.8 8 10.5 10.8 C 2.4 2.7 D 0.7 0.9 2.25 TYP. E F 0.49 0.75 C 4.5 TYP. L 15.7 TYP. M 1.27 TYP.

ua 471

Abstract: BF469 BF471 BF470 471 npn
Contextual Info: BF469, BF471 BF469, 471 NPN PLASTIC POWER TRANSISTORS Complementary BF470, 472 Video Applications in TV PIN CONFÎGURATION 1. EM IT TER 2. COLLECTOR 3. BASE MIN. DIM MAX. A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 2.25 TYP. E F 0.49 I 0.75 G 4.5 TYP. L 15.7 TYP.

DTA124GS

Contextual Info: DTA124GU/DTA124GK/DTA124GS/DTA124GF DTA124GL/DTA124GA/DTA124G V b ~7 > V 7* 7 /Transistors DTA124GU/DTA124GK/DTA124GS/DTA124GF DTA124GL/DTA124GA/DTA124GV h > v X *7 X < "j 5VTransistor Switch Digital Transistors Includes Resistors • \T>±l2I/Dimensions (Unit: mm)

Contextual Info: • 7^5^537 O O g ^ f l T ■ _ SGS-TTiOMSON 1^ 10 g^@[l[L[i ir^@[i0(g i_ B U Z 6 0 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTOR S G S-THOMSON 3GE J> TYPE V DSS f*DS(on b BUZ60 400 V 1.0 fl

Contextual Info: b b S E ' m OOEflETH fib'? BU706 BU706D b^E » N AMER PHILIPS/DISCRETE SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed switching npn transistors in a plastic envelope intended fo r use in horizontal deflection circuits o f colour television receivers and line operated switch-mode applications. The

B0441

Abstract: BD439 BD440 BD441 BD442
Contextual Info: BD439, BD441 BD440, BD442 BD439, 441 BD440, 442 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium Power Linear and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM 7.8 B 10.5 10.8 C 2.4 2 .7 D 0.7 0 .9 A p i­

Contextual Info: CDU BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistors Marking BCW60A = AA BCW60B '= AB BCW60C = AC BCW60D = AD PACKAG E O UTLIN E DETAILS ALL DIM EN SION S IN mm _3.0 2.8" 0.14 0.48 0.38 3 2.6 Pin configuration 2.4

Contextual Info: SGS-THOMSON MigimiCTMllgi STZT2907 STZT2907A MEDIUM POWER AMPLIFIER . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING ciRCurrs • GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER

BU706

Abstract: BU706D U706
Contextual Info: N AMER PHILIPS/D ISCRE TE bSE » • ^53*131 DD262T4 ñb'? * A P X I JI BU706 BU706D SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed switching npn transistors in a plastic envelope intended fo r use in horizontal deflection circuits o f colour television receivers and line operated switch-mode applications. The

BCW60A

Abstract: BCW60B BCW60C BCW60D
Contextual Info: BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistors M arkin g BCW 60A = AA BCW 60B '= AB BCW 60C = AC BCW 60D = AD P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m _3.o_ 2.8 0.48 0.38 0.14 3 2.6

T1P127

Abstract: TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT T1P121 TIP127 TIP126 circuit T1P-127 TIP126 tip125 P126 TIP120
Contextual Info: TIP125 TIP126 TIP127 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in m onolithic Darlington circuit fo r audio ou tp u t stages and general am plifier and switching applications. T 0-22 0 plastic envelope. N-P-N complements are TIP120, T1P121

395 transistor

Abstract: of 395 diode bss395 transistor bss bss 395 bss 17 transistor
Contextual Info: SIEMENS SIPMOS Small-Signal Transistor BSS 395 V DS = 50 V = 4 .4 A ^DS on = 0.3 CI Id • • • N channel Enhancem ent mode Package: TO -202 1> Not for new design! Type O rdering code for version in bulk Q 62702-S604 I BSS 395 M axim um Ratings Param eter

NEL130681-12

Abstract: NEL1306 2SC3542 NEL1300 NEL13208I-12 2SC3541 J425 75E5 NEL132081-12 NEL1320
Contextual Info: CLASS A, 1.3 GHz, 12 VOLT POWER TRANSISTOR FEATURES NEL130681-12 NEL13208I-12 DESCRIPTION • HIGH LINEAR POWER AND GAIN: N E L 1306: P idB = 3 8 dBm , G id B = 7.5 dB T Y P N EC 's N E L 1 3 0 0 series of N P N epitaxial microwave power transistor is designed specifically for large volum e mobile and

u706

Abstract: BU706 BU706D
Contextual Info: N ÀMER PHILIPS/DISCRETE b'ìE D • ^53*131 D02Ö2T4 ôb'î M A P X I BU706 II BU706D SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed sw itching npn transistors in a plastic envelope intended fo r use in h o rizo n ta l d e fle ctio n c ircu its o f co lo u r television receivers and line operated sw itch-m ode applications. The

Contextual Info: bRE D N AMER P H IL IP S /D IS C R E T E • bbS3R31 0Q3Qb65 D5T « A P X Product Specification Philips Semiconductors B U K456-200A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

transistor Bc 542

Abstract: transistor bc 564 marking EB 202 transistor transistor A 564 Transistors marking WZ PM564 2574 transistor transistor BF 52 SOT-23 marking aeg 883S
Contextual Info: « I TELEFUNKEN ELECTRONIC 17E D 0 *1 2 0 0 ^ O D D ^ S * BF 883 S TT1 IL1 IRUIMIKI1M electronic C ru fta Ttahnofog*« T -3 3 -0 € T Silicon NPN Epitaxial Planar RF Transistor Applications: Video B-class power stages in TV receivers Features: No /?F£-drift dependent of temperature

p367

Abstract: sgsp467 P467 sgsp463 sgsp567 SGSP363 sgsp563 P3B7 ic isd 1932 SGSP367
Contextual Info: s G S-THOMSON 07E D ‘ . I 73C 17387 SGSP363/P367 ; SGSP463/P467 ' SGSP563/P567 7^ 2 ^ 3 7 D O D iT ô ^ a 7* 3 ^ ^ fi " “1.1 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field

Contextual Info: • “ 7# 7^2^537 Q0HbQ33 QST ■ S 6 T H _ S C S -T H O M S O N K i» [L [l m M K S S T K 3 N 50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK3N50 ■ ■ ■ ■ . V dss R D S (on Id 500 V < 3.8 Q 2.7 A TYPICAL RDS(on) = 2.5 i2

BUK456

Abstract: C055 T0220AB 7ts transistor
Contextual Info: N AflER P H I L I P S / D I S C R E T E b^E D • hbS3=J31 003Qb6S DST » A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

GaAs FET HEMT Chips

Abstract: on 5295 transistor MGFC4453A transistor on 4436 InGaAs HEMT mitsubishi low noise x band hemt transistor fet transistor a03 FET Spec sheet transistor on 5295 5458 transistor
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4453A InGaAs HEMT DESCRIPTION The M G FC4453A low-noise HEMT High Electron Mobility OUTLINE DRAWING Transistor is designed for use in X to K band amplifiers. Unit : u m FEATURES Low noise figure @ f=12GHz NFmin. = 0.40dB (TYP.)

transistor 8BB smd

Abstract: smd diode marking 3fs smd code book B3 transistor transistor marking smd 7c smd diode 77a q1333su BUZ100S smd DIODE 3FS H7 marking code smd smd transistor c015
Contextual Info: BUZ 10OS In fin e o n technologie» SIPMOS Power Transistor Product Summary Features 55 V • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.015 Í2 77 A • dv/df rated

BLY92C

Abstract: mfc capacitor philips
Contextual Info: bSE J> • PHILIPS INTERNATIONAL 7110fiEb DObabST 4T1 HIPHIN BLY92C . y v. V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is guaran­

Contextual Info: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P.1dB = +19dB m at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f j = 24 GHz • Gold metalization for high reliability