2SC3542
Abstract: 2SC3541 NEL1320 NEL132081-12 1300 3d NEL130681 NEL1300 NEL130681-12 CNC12 NEL1306
Contextual Info: NEC/ CALIFORNIA NEC SbE J> m b427MlM 000254*=! 731 » N E C C 'T 'T b - W CLASS A, 1.3 GHz, 12 VOLT POWER TRANSISTOR NEL130681-12 NEL132081-12 OUTLINE DIMENSIONS FEATURES • H IG H LINEAR PO W ER AN D GAIN: NEL1306: P u b = 38 dBm, G iob = 7.5 dB TYP NEL1320: PidB = 43 dBm, GidB = 6 dB TYP
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b427mlmt-33-unel130681-12nel132081-12+9nel1306nel13200q25s12sc35422sc35411300 3dnel130681nel1300cnc12
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NEL130681-12
Abstract: NEL1306 2SC3542 NEL1300 NEL13208I-12 2SC3541 J425 75E5 NEL132081-12 NEL1320
Contextual Info: CLASS A, 1.3 GHz, 12 VOLT POWER TRANSISTOR FEATURES NEL130681-12 NEL13208I-12 DESCRIPTION • HIGH LINEAR POWER AND GAIN: N E L 1306: P idB = 3 8 dBm , G id B = 7.5 dB T Y P N EC 's N E L 1 3 0 0 series of N P N epitaxial microwave power transistor is designed specifically for large volum e mobile and
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nel130681-12nel13208i-12nel1306nel1320+10nel130010pfmax1000pf30dbm38dbm2sc35422sc3541j42575e5nel132081-12
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NEL130681-12
Abstract: J425 NEL1306 NEL1300 2SC3542
Contextual Info: CLASS A, 1.3 GHz, 12 VOLT POWER TRANSISTOR NEL130681-12 NEL13208I-12 FEATURES DESCRIPTION • HIGH LINEAR POWER AND GAIN: NEL1306: PidB = 38 dBm, GidB - 7.5 dB TYP NEL1320: PidB = 43 dBm, GidB - 6 dB TYP NEC's NEL1300 series of NPN epitaxial microwave power
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nel1306nel1320nel130681-12nel13208i-12+6nel130010pfm1000pfnel132081-12j4252sc3542
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NE1010E
Abstract: NEM4203 nel130681 NEL132081-12 NE1010E-20 NEL1320 NEM2003B NE4203 NEL130681-12 NEM054029-28
Contextual Info: LT . N E C / - - CALIFORNIA 15E D • L4S7414 0001515 2 ■ 7^33-Oj Additional Power Silicon Bipolar Products t - 3 J - qi ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS hFE PACKAGE CODE VCBO VCE V Ic (A) Pt (V) (C/W) <W) (V) Ic« (mA) TYP NEL130681-12
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b4s7414t-3j-01nel130681-12nel132081-12+12nem054029-28nem056029-28nem050c29-28ne1005e-20ne1010e-20nem1706b-20ne1010enem4203nel130681nel1320nem2003bne4203
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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an83301-1ne24615an83302an83303-1+16ne71083ne70083an83901an8530111/86-lnan86104svi 3104 cupc1678gne333stb 1277 transistor equivalenttransistor bf 175ne85635 packaging schematicne72000 vcsvi 3104ne9000ne720
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NE99532
Abstract: 2sc3358 NE3005B20 NE85637 NE4201 NE1010E 2SC3358 transistor ne3005b-20 NE1005E NEC 8563
Contextual Info: NEC/ CALIFORNIA 1SE D bMs?m4 D D o m a i a T IM S - T - it- t r NEC NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES T'3h21 FEATURES DESCRIPTION AND APPLICATIONS • H IG H G A IN B A N D W ID T H P R O D U C T : f r = 7 G H z The NE856 series of NPN epitaxial silicon transistors Is de
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NEL1320
Contextual Info: Power Silicon Bipolar Selection Guide UHF DEVICES: 500 MHz to 1 GHz Part Mambar Pact*«« Style Fn^MNf Range BHl ta * lt Valtoge W rot cun « O f n iH (dBm) Poiit (W> Pour Gain (dBm) Efficiency (%) -fû t ftgt^ vw M mmI H M l M al " “ dWW. H a nd H e ld A p p lic a tio n s : 7 V o lt S u p p ly, C la s s C
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nem090701-07nem090301ne090101-ne081091-12+7ne081090-12ne080491-12ne080490-12ne080190-12ne080191-12nem0m081b-28nel1320
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NEL230397
Abstract: NEL132081-12 NEL230297 NEL130681-12 NEL151081-12 NEL230153 NEL230220 NEL150181-12 NEL150481 NEL230257
Contextual Info: NEC/ CALIFORNIA 47E » • fc.M2?m4 0DG52Sb «NECC MICROWAVE DEVICES PART NUMBER PACKAGE STYLE FREQUENCY RANGE GHz SUPPLY VOLT. (V) CLASS OF OPER. TYP. TYP. Pout Pout (dBm) (W) TYP. GAIN (dB) TYP. EFFICIENCY (%) TEST INTERNAL FREQUENCY MATCHING (GHz) IN/OUT
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