Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    L4S7414 Search Results

    L4S7414 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NE1010E

    Abstract: NEM4203 nel130681 NEL132081-12 NE1010E-20 NEL1320 NEM2003B NE4203 NEL130681-12 NEM054029-28
    Contextual Info: LT . N E C / - - CALIFORNIA 15E D • L4S7414 0001515 2 ■ 7^33-Oj Additional Power Silicon Bipolar Products t - 3 J - qi ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS hFE PACKAGE CODE VCBO VCE V Ic (A) Pt (V) (C/W) <W) (V) Ic« (mA) TYP NEL130681-12


    OCR Scan
    b4s7414t-3j-01nel130681-12nel132081-12+12nem054029-28nem056029-28nem050c29-28ne1005e-20ne1010e-20nem1706b-20ne1010enem4203nel130681nel1320nem2003bne4203 PDF

    impatt diode

    Abstract: DIODE 5H impatt 1ST11 d8030 ND8M30-1N BV-1 1ST22
    Contextual Info: NEC/ CALIFORNIA NEC 1SE D b427414 OGOnbG 1 SILICON CW IMPATT DIODE T - o 7 i ND8 SERIES OUTLINE DIMENSIONS FEATURES • HIGH POWER OUTPUT AND WIDE FREQUENCY SELECTION 3.50 W at 8 GHz 3.00 W at 11 GHz 2.20 W at 15 GHz 1.20 W at 20 GHz 0.70 W at 30 GHz 0.40 W at 40 GHz


    OCR Scan
    b427414nd8n40wnd8l60w-1tnd8j80w+9nd8g96w-1timpatt diodediode 5himpatt1st11d8030nd8m30-1nbv-11st22 PDF

    NE02136

    Abstract: 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package
    Contextual Info: N E C / 1SE D CALIFORNIA r - 3 / '/ 5 b427414 000137S 1 NPN SILICON HIGH FREQUENCY TRANSISTOR T '3 i- I 7 NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­


    OCR Scan
    b427414000137sne0213l-17+10ne021362sc2570ne02135 equivalent2sc2570 transistorne02103k4272sc15602sc2351 equivalentlm5741ghz micro-x package PDF

    impatt diode

    Abstract: 1ST23 ND487C2-3R nd487c1-3r ND487 ND8L60W1T impatt 1ST11 ND8M30-1N ND487C2-00
    Contextual Info: N E C / CALIFORNIA NEC 1SE D b427414 OGOnbG 1 SILICON CW IMPATT DIODE V -0 7 1 1 ND8 SERIES OUTLINE DIMENSIONS FEATURES • HIGH POWER OUTPUT AND WIDE FREQUENCY SELECTION 3.50 W at 8 GHz 3.00 W at 11 GHz 2.20 W at 15 GHz 1.20 W at 20 GHz 0.70 W at 30 GHz 0.40 W at 40 GHz


    OCR Scan
    b427414nd487c1-3rnd487c2-00nd487c2-3p+13nd487c2-3rnd487r1-00nd487r1-3pnd487r1-3rnd487r2-00nd487r2-3pimpatt diode1st23nd487nd8l60w1timpatt1st11nd8m30-1n PDF