SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
|
OCR Scan
|
an83301-1ne24615an83302an83303-1+16ne71083ne70083an83901an8530111/86-lnan86104svi 3104 cupc1678gne333stb 1277 transistor equivalenttransistor bf 175ne85635 packaging schematicne72000 vcsvi 3104ne9000ne720
|
PDF
|
0903010
Abstract: 2SC3816 E090101 NE0900-07
Contextual Info: CLASS C, 940 MHz, 7 VOLT POWER TRANSISTOR *£*¡2 , NEM090701-07 FEATURES DESCRIPTION • HIGH PO W ER AN D GAIN The NE0900-07 and N E M 0900-07 series of NPN silicon epitaxial UH F power transistors are designed specifically for hand-held radio applications with a supply voltage of 7.2 V.
|
OCR Scan
|
nem090701-07ne0900-07nem0900-070903010+22sc3816e090101
|
PDF
|
2SC3814
Abstract: NE0900-07 2SC3816 2SC3815
Contextual Info: CLASS C, 940 MHz, 7 VOLT POWER TRANSISTOR n e m 090701-07 FEATURES DESCRIPTION • HIGH PO W ER AN D GAIN The NE0900-07 and N EM 0900-07 series of NPN silicon epitaxial UHF power transistors are designed specifically for hand-held radio applications with a supply voltage of 7.2 V.
|
OCR Scan
|
ne0900-07nem0900-072sc38142sc3816+12sc3815
|
PDF
|
NEL1320
Contextual Info: Power Silicon Bipolar Selection Guide UHF DEVICES: 500 MHz to 1 GHz Part Mambar Pact*«« Style Fn^MNf Range BHl ta * lt Valtoge W rot cun « O f n iH (dBm) Poiit (W> Pour Gain (dBm) Efficiency (%) -fû t ftgt^ vw M mmI H M l M al " “ dWW. H a nd H e ld A p p lic a tio n s : 7 V o lt S u p p ly, C la s s C
|
OCR Scan
|
nem090701-07nem090301ne090101-ne081091-12+7ne081090-12ne080491-12ne080490-12ne080190-12ne080191-12nem0m081b-28nel1320
|
PDF
|