7C600 Search Results

CY7C157

Contextual Info: CY7C157 — 16,384 x 16 Static R/W RAM S'"Os CYPRESS SEMICONDUCTOR F eatu res F u n ctio n al D escrip tio n • O p tim ized fo r use w ith CY 7C600 SPARC p ro d u c t fam ily T h e CY 7C157 is a high-perform ance C M O S static R A M organized as 16,384 x

JS28F512M29

Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

7be0

Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

CY7C601

Abstract: CY7C600 7C600 CY7C157A
Contextual Info: • - ^ SEMICONDUCTOR Introduction to RISC and com piler design. A t each step, com puter architects must ask: to what extent does a feature improve o r degrade perform ance and is it w orth the cost of im plem entation? Each additional feature, no m atter how useful it is in an isolated instance, makes all others p er­

M29EWL

Abstract: M29EW JS28F00AM29EWH 28F256M29EW JS28F00AM29EW
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

JS28F00am29

Abstract: JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

Contextual Info: CYPRESS MbE D SEMICONDUCTOR ^ asa-Ttta oao74t.i T - M i- n - 3 8 CYPRESS SEMICONDUCTOR • Reduced Instruction Set Computer RISC Architecture — Simple format instructions — M ost instructions execute in a single cycle • Very high performance — 25-, 33-, and 40-MHz clock speeds

CY7C601

Abstract: CY7C601A bicc CY7C602A WORD11
Contextual Info: CY7C601A CYPRESS SEMICONDUCTOR Features • Reduced Instruction Set Computer RISC Architecture — Simple format instructions — Most instructions execute in a single cycle • Very high performance — 25-, 33*, and 40-MHz clock speeds yield 18,24, and 29 MIPS sustained

JS28F512M29EWL

Abstract: JS28F00AM29EWH JS28F256M29EWL JS28F512m29ewh JS28F00am29 pc28f512m29ewh JS28F256M29EWH JESD-47 PC28F00AM29EWH 28F256M29EW
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

JS28F512

Abstract: JS28F256M29EWL M29EWL js28f256m29 JS28F512M29 JS28F00am29 PC28F512 5D200 PC28F256M29
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

JS28F512M29

Abstract: M29AWH PC28F512M29AWHB pc28f00am29 Micron 512MB NOR FLASH 8bit data PC28F00AM29AWLB PC28F512M PC28F512 JS28F512 M29A
Contextual Info: Preliminary‡ 1Gb, 512Mb: x8, x16 3V Supply NOR Flash Memory Features Micron 3V Supply NOR Flash Memory M29AW – 1Gb, 512Mb x8/x16, Uniform Block Features • Blank check to verify an erased block • VPP/WP# pin protection – Protects first or last block regardless of block protection settings

CY7C601

Contextual Info: " ^ ^ 5 jF CY7C604A _ - _ - . - - - • - Cache Controller and Memory Management Unit CYPRESS — SEMICONDUCTOR Features • Fully conforms to the SPARC Reference Memory M anagement Unit M M U Architecture • Hardware table walk Description

Cy7C601

Abstract: D6336 7C605
Contextual Info: CY7C605A r ^ p p rc c SEMICONDUCTOR Features • M ultiprocessing support • Pin-compatible with CY7C604A • Cache coherency protocol modeled af­ ter IEEE Futurebus • Separate virtual and physical cache tag memories — Each cache tag memory holds 2048

Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit x8 / x16, page, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

7C602

Abstract: CY7C601
Contextual Info: CY7C602A CYPRESS SEMICONDUCTOR Features • Direct interface to CY7C601 integer unit • Direct interface to CY7C157 Cache Storage Unit CSU • FullcompliancewithANSI/IEEE-754 standard for binary floating-point arithmetic • Supports single and double precision

JS28F256m

Abstract: js28f256m29 JS28F512 256M29EWH
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

cy7c611

Abstract: CY7C602A asi cypress CY7C157A CY7C611A 38R1
Contextual Info: CY7C611A CYPRESS SEMICONDUCTOR Features • SPARC CD processor optimized for em­ bedded control applications • Reduced Instruction Set Computer RISC architecture — Simple format instructions — M ost instructions execute in a single cycle • Very high performance

j6920

Contextual Info: CY7C157A CYPRESS SEMICONDUCTOR Features Functional Description • Optimized for use with RISC proces­ sors, including SPARC • Address and WE registers • CMOS for optimum speed/power • High speed — 18 ns T h e C Y 7C157A cache storage u n it is a

CY7C601

Abstract: cccv
Contextual Info: CY7C601A r ^ y p p r c c • — 32-Bit RISC Processor SEMICONDUCTOR — R egisters can be u sed a s e ight w in­ dows o f 24 registers each for low pro ced u re overhead Features • Reduced In stru c tio n Set C om puter R ISC A rchitecture — Sim ple fo rm at in stru ctio n s

CY7C157A

Contextual Info: CY7C601A CYPRESS SEMICONDUCTOR 32-Bit RISC Processor — Registers can be used as eight win­ dows of 24 registers each for low procedure overhead — Registers can also be used as regis­ ter banks for fast context switching Features • Reduced Instruction Set Computer

CY7C601

Contextual Info: CYPRESS SEMICONDUCTOR 4LE » a s a ^ b L S - \2 .- 5 CYPRESS SEMICONDUCTOR Direct interface to CY7C601 integer unit Dircct interface to CY7C157 Caciie Storage Unit CSU Full compliance with ANSI/IEEE-754 standard for binary floating-point arithm etic Supports single and double precision

M140 Blue Laser Diode

Abstract: 12 volt electronic ballast for fluorescent light ledinta0350c425 philips xitanium 150W 1-10V XI040C070V056CNJ1 M140 laser diode t5 94v-0 tv philips
Contextual Info: Lighting Electronics Atlas A Full Line Catalog of LED Drivers, LED Modules, Ballasts and Lighting Controls 2014-2015 Contents Philips Advance LED Drivers Page 1-1 Philips LED Modules Page 2-1 Philips Advance Electronic Fluorescent Ballasts Page 3-1 Philips Advance Electronic Fluorescent Controllable Ballasts

Contextual Info: CY7C157A CYPRESS SEMICONDUCTOR Features Functional Description • Optimized for use with RISC proces­ sors, including SPARC • Address and WE registers • CMOS for optimum speed/power • High speed — 18 ns T h e C Y 7C157A cache storage u n it is a

Cy7C601

Abstract: STD-745-1985 cy7c601a
Contextual Info: CY7C602A CYPRESS SEMICONDUCTOR Features • Direct interface to CY7C601 integer unit • Direct interface to CY7C157 Cache Storage Unit CSU • Full compliance with ANSI/IEEE-754 standard for binary floating-point arithmetic • Supports single and double precision