7A 400V DIODE Search Results

TA17424

Abstract: AN7254 AN7260 RFM7N35 RFM7N40 RFP7N35 RFP7N40 TB334
Contextual Info: RFM7N35, RFM7N40, RFP7N35, RFP7N40 Semiconductor 7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 7A, 350V and 400V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

Contextual Info: RFM7N35, RFM7N40, RFP7N35, RFP7N40 HARRIS S E M I C O N D U C T O R 7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs July 1998 Description Features 7A, 350V and 400V Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

darlingtion transistor 2 amp

Abstract: TIP150 NPN Transistor 50A 400V
Contextual Info: Transistor Features: • Collector-Emitter Sustaining Voltage VCEC SUS = 30V (Minimum) • Collector-Emitter Saturation Voltage VCE (sat) = 2.0V (Maximum) at IC = 5.0 A • Reverse-Base SOA - 300V to 400V at 7A Dimensions Minimum Maximum A 14.68 15.31 B

IRFP440R

Abstract: cd3232 IRFP441R IRFP442R IRFP443R ir441
Contextual Info: Rugged Power M OSFETs_ IRFP440R, IRFP441R, IRFP442R, IRFP443R File Number 2089 Avalanche Energy Rated N-Channel Power MOSFETs 8A and 7A, 500V-400V rDs on = 0 .8 5 0 and 1 .1 0 N-CHANNEL ENHANCEMENT MODE D Features: • ■ ■ ■

NTE2638

Contextual Info: NTE2638 Silicon NPN Transistor Darlington Features: D High Voltage, High Forward and Clamped Reverse Energy D 10A Peak Collector Current D 80W at +25°C Case Temperature D Collector–Emitter Sustaining Voltage: 400V Min at 7A Absolute Maximum Ratings: TC = +25°C unless otherwise specifieid

Dow Corning DC 11

Abstract: NTE2638 npn darlington 400v 1.*a
Contextual Info: NTE2638 Silicon NPN Transistor Darlington Features: D High Voltage, High Forward and Clamped Reverse Energy D 10A Peak Collector Current D 80W at +25°C Case Temperature D Collector−Emitter Sustaining Voltage: 400V Min at 7A Absolute Maximum Ratings: TC = +25°C unless otherwise specifieid

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N40 Preliminary Power MOSFET 7A, 400V N-CHANNEL POWER MOSFET 1 „ The UTC 7N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a

C25P-FR

Abstract: C25P40F 662A C25P30F C25P30FR C25P40FR C25P40
Contextual Info: C25P30F C25P40F C25P30FR C25P40FR 27. 7A / 300~ 400V / t r r : 60nsec FAST RECOVERY DIODE 5.31.209 4.71.185) FEATU R ES 15.91626) I °Similar to TO-247AC TO-3P) Case r 15.31602^ 3 .6 (.1 4 2 ) TN. « 3 .4 (.1 3 4 j 5 .7I.224) m ° Dual Diodes - Cathode Common and

IRF840R

Abstract: RF840 IRF840 IRF841R IRF842R IRF843R M2R DIODE
Contextual Info: Rugged Power MOSFETs IRF840R, IRF841R IRF842R, IRF843R File N u m b er 2034 Avalanche Energy Rated N-Channel Power MOSFETs 8A and 7A, 500V-400V rDs on = 0.850 and 1.10 TE R M IN A L DIAGRAM Features: • ■ ■ ■ ■ Single pulse avalanche energy rated

IRF4431

Abstract: IRF44 IRF442R IRF 426 441F IRF440R IRF441R IRF443R RF440 rf44
Contextual Info: _Rugged Power MOSFETs File N u m b er 2007 IRF440R, IRF441R, IRF442R, IRF443R Avalanche Energy Rated N-Channel Power MOSFETs 8A a nd 7A, 500V-400V rDs on = 0 .8 5 f) and 1 .1 0 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated

BASIC digital multimeter diagram

Abstract: PKM24-4A0 38D8R02H 5 VOLT piezo beeper 4MC2 harris volt meter digital multimeter icl7139
Contextual Info: h S E M aI C O r N Dr U Ci T sO R æ Im C L m m 7 1m 3 m 9 w , Features • 18 R a n g e s -IC L 7 1 49 4 2 4 4 4 C L 7a ^ m 1* 4 * 9 Description 13 R a n g e s - ICL7139 - 4 DC Voltage 400mV, 4 V, 40V, 400V - 1 AC Voltage 400V - 4 DC Current 4mA, 40mA, 400mA, 4A

IRGS14B40L

Abstract: IRGS14 IC100
Contextual Info: IRGS14B40L PROVISIONAL INSULATED GATE BIPOLAR TRANSISTOR 14A, Voltage Clamped 400V IGBT Co l l ect o r G at e Rg Rg e D 2 P ak Em it te r MIN TYP MAX UNITS CONDITIONS VCL COLLECTOR - EMITTER CLAMPING VOLTAGE 370 400 430 V RG =1 kOhm , Ic =7A VECAV EMITTER - COLLECTOR AVALANCHE VOLTAGE

MQBQ-270-28B

Contextual Info: MQBQ-270-28B Single Output H igh R eliability DC-DC C onverter 230-400V 155-450V 28V 400W 95%@7A / 95%@14A Continuous Input Transient Input Output Output Efficiency O peration : -55ºC to The MilQor series of high-reliability DC-DC converters +125ºC brings SynQor's field proven high-efficiency synchronous

RTCA DO-160

Contextual Info: MQBQ-270-28B Single Output H igh R eliability DC-DC C onverter 155-450V 28V 400W 94.6%@7A / 95.4%@14A Continuous Input Transient Input Output Output Efficiency a pu d bl va ic n at ce io d n 230-400V O peration : -55ºC to The MilQor series of high-reliability DC-DC converters

Contextual Info: S2306 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 160mW ID 22A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode

Contextual Info: SCT2160KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 160mW ID 22A PD 165W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode

zvs flyback driver

Abstract: APT15F60B APT15F60S MIC4452
Contextual Info: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced

Contextual Info: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET TO POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced

Contextual Info: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced

APT15F60B

Abstract: APT15F60S MIC4452
Contextual Info: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced

D1F40

Abstract: S1ZB40 200v 10A mosfet diode 2f D1F10 DIODE D1F20 S1ZA40 diode rm 62 mosfet 600V 30A S1WB S 40 68
Contextual Info: h7>yX^ T ra n sisto r Vi KO 2 S A l 795 2SA1796 2SC4668 2SC4669 -5A -7A 7A 10A MOSFET R e ctifie r Diode Vi is s Id 0.5A 1.0A 1.0A 1.5A V rm Io 1.0A 1.1A 1.4 A Bridge Diode_ V rm 10 0.8A S c h o ttk y B a rrie r Diode ' Io V rm 1.1A 1.6A 3 .0 A

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

K06N60

Abstract: SKB02N60 200v 1.5v 3a diode 400v 3a low vf diode
Contextual Info: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

Contextual Info: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls