K06N60 Search Results
K06N60 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
K06N60
Abstract: fast recovery diode 2a trr 200ns SKB02N60
|
Original |
SKB02N60 P-TO-263-3-2 O-263AB) K06N60 fast recovery diode 2a trr 200ns SKB02N60 | |
K06N60
Abstract: fast recovery diode 2a trr 200ns PG-TO-220-3-1 SKP02N60
|
Original |
SKP02N60 PG-TO-220-3-1 O-220AB) K06N60 fast recovery diode 2a trr 200ns PG-TO-220-3-1 SKP02N60 | |
K06N60
Abstract: PG-TO-263-3-2 SKB06N60
|
Original |
SKB06N60 PG-TO-263-ain K06N60 PG-TO-263-3-2 SKB06N60 | |
|
Contextual Info: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls |
Original |
SKP02N60 PG-TO-220-3-1 O-220AB) SKP02N60 | |
|
Contextual Info: SKB06N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability |
Original |
SKB06N60HS K06N60HS P-TO-220-3-45 SKB06N60HS | |
K06N60
Abstract: k06n60hs 25E-4 PG-TO-263-3-2 SKB06N60HS
|
Original |
SKB06N60HS PG-TO-263-3-2 K06N60HS K06N60 k06n60hs 25E-4 PG-TO-263-3-2 SKB06N60HS | |
|
Contextual Info: SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 s Designed for frequency inverters for washing machines, |
Original |
SKB06N60 | |
K06N60Contextual Info: SKP06N60 SKA06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: Motor controls, Inverter |
Original |
SKP06N60 SKA06N60 PG-TO-220-3-1 O-220AB) O-220, SKA06N60 K06N60 | |
K06N60
Abstract: SKA06N60 K06N60 TO-220F infineon IGBT 1000V .100A IGBT 0835 SKP06N60
|
Original |
SKP06N60 SKA06N60 PG-TO-220-3-1 O-220AB) O-220, SKA06N60 K06N60 K06N60 TO-220F infineon IGBT 1000V .100A IGBT 0835 | |
K06N60
Abstract: TO220 package infineon K06N60 SMD
|
Original |
SKB06N60 O-220, SKB06N60 K06N60 TO220 package infineon K06N60 SMD | |
K06N60Contextual Info: SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls, Inverter |
Original |
SKB06N60 O-220, SKB06N60 K06N60 | |
K06N60
Abstract: SKB02N60 PG-TO-263-3-2
|
Original |
SKB02N60 PG-TO-263-ain K06N60 SKB02N60 PG-TO-263-3-2 | |
K06N60
Abstract: fast recovery diode 600v 12A SKP06N60 PG-TO-220-3-1 PG-TO220-3-31 SKA06N60
|
Original |
SKP06N60 SKA06N60 PG-TO-220-3-1 O-220AB) O-220, K06N60 fast recovery diode 600v 12A SKP06N60 PG-TO-220-3-1 PG-TO220-3-31 SKA06N60 | |
K06N60
Abstract: diode 6A 600v
|
Original |
SKP06N60 SKA06N60 PG-TO-220-3-1 O-220AB) O-220, SKA06N60 K06N60 diode 6A 600v | |
|
|
|||
K06N60
Abstract: SKB02N60 200v 1.5v 3a diode 400v 3a low vf diode
|
Original |
SKB02N60 P-TO-220-3-45 K06N60 SKB02N60 200v 1.5v 3a diode 400v 3a low vf diode | |
|
Contextual Info: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls |
Original |
SKB02N60 SKB02N60 | |
|
Contextual Info: SKB06N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability |
Original |
SKB06N60HS K06N60HS P-TO-263-3-2 Q67040S4544 P-TO-263-3-2 O-263AB) SKB06N60HS | |
|
Contextual Info: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls |
Original |
SKP02N60 PG-TO-220-3-1 O-220AB) SKP02N60 | |
K06N60Contextual Info: SKB06N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability |
Original |
SKB06N60HS K06N60HS P-TO-220-3-45 SKB06N60HS K06N60 | |
|
Contextual Info: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 s Designed for: - Motor controls |
Original |
SKP02N60 PG-TO-220-3-1 O-220AB) | |
fast recovery diode 2a trr 200ns
Abstract: fast recovery diode 1a trr 200ns K06N60 Q67040-S4214
|
Original |
SKP02N60 PG-TO-220-3-1 O-220AB) SKP02N60 fast recovery diode 2a trr 200ns fast recovery diode 1a trr 200ns K06N60 Q67040-S4214 | |
|
Contextual Info: SKP06N60 SKA06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 s Designed for: Motor controls, Inverter |
Original |
SKP06N60 SKA06N60 PG-TO-220-3-1 O-220AB) O-220, | |