K06N60HS Search Results
K06N60HS Datasheets Context Search
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Contextual Info: SKB06N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability |
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skb06n60hsk06n60hsp-to-220-3-45 | |
K06N60
Abstract: k06n60hs 25E-4 PG-TO-263-3-2 SKB06N60HS
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skb06n60hspg-to-263-3-2k06n60hsk06n60+1 | |
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Contextual Info: SKB06N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability |
Original |
skb06n60hsk06n60hsp-to-263-3-2q67040s4544+1 | |
K06N60Contextual Info: SKB06N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability |
Original |
skb06n60hsk06n60hsp-to-220-3-45k06n60 |