FAST RECOVERY DIODE 600V 12A Search Results

diode 400V 6A

Abstract: D06E60
Contextual Info: IDP06E60 Fast Switching Diode Emitter Controlled Diode Product Summary VRRM Features 600 V IF 6 A VF 1.5 V T jmax 175 °C • 600V Emitter Controlled technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage PG-TO220-2

STTA1206D

Abstract: STTA1206DI marking L6A
Contextual Info: STTA1206D I  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 12A VRRM 600V trr (typ) 28ns VF (max) 1.5V K A IF(AV) FEATURES AND BENEFITS A A SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS: Freewheel or Booster Diode. ULTRA-FAST RECOVERY.

GP19NC60WD

Contextual Info: STGP19NC60WD N-channel 600V - 19A - TO-220 Ultra fast PowerMESH IGBT General features Type VCES STGP19NC60WD 600V VCE sat IC @100°C (max)@25°C < 2.5V 19A • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction susceptbility) ■ Very soft ultra fast recovery antiparallel diode

SIDC03D60F6

Abstract: L4324
Contextual Info: SIDC03D60F6 Fast switching diode A Features: • 600V Emitter Controlled technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient This chip is used for: • power modules and discrete devices C Applications:

Contextual Info: SIDC02D60C8 Fast switching diode chip in Emitter Controlled 3 -Technology Features: • 600V Emitter Controlled 3 technology 70 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient A This chip is used for: • Power module

SWITCHING TRANSISTOR C114

Abstract: C114 E S W transistor C114 transistor for C114 transistor IRGPC30FD2 C-111 C-113 C-114 C-115 ic c113 61
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1040 IRGPC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes

C-107

Abstract: C-108 IRGBC30FD2 c103 a ge
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.794 IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes

C-107

Abstract: C-108 IRGBC30FD2 transistor c107 m IRGBC30 c103 a ge
Contextual Info: PD - 9.794 IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to

c103 a ge

Abstract: C-107 C-108 IRGBC30FD2
Contextual Info: PD - 9.794 IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to

IRGBC30MD2

Contextual Info: PD - 9.1108 IRGBC30MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

IRGBC30MD2

Contextual Info: PD - 9.1108 IRGBC30MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

transistor c373

Abstract: c380 transistor transistor c375 transistor c380 o transistor c380 AN-994 IRGBC30MD2-S SMD-220 C380 ge Tx/c380 transistor
Contextual Info: PD - 9.1143 IRGBC30MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

Contextual Info: International ^Rectifier P D - 9.1082 IRGPC30MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short Circuit Rated Fast CoPack IGBT V ces = 600V Short circuit rated -10ps @125°C, VGE = 15V Switching-loss rating includes all "tail” losses

C394 transistor

Abstract: cr-e5
Contextual Info: International [ior]Rectifier P D - 9.1082 IRGPC30MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V ces = 600V • Short circuit rated -10ps @125°C, V qe = 15V • Switching-loss rating includes all "tail' losses

transistor c374

Abstract: transistor c373 transistor c377
Contextual Info: International [^Rectifier P D -9.1143 IRGBC30MD2-S Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces = 600V Short circuit rated -1 Ops @ 125°C, V qe = 15V Switching-loss rating includes all "tail" losses

C394 transistor

Abstract: iC C393 IRGPC30MD2 C389 GE c394 transistor C393
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1082 IRGPC30MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

IRGBC30MD2

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1108 IRGBC30MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

transistor c373

Abstract: c380 transistor transistor c375 transistor c380 transistor c380 o AN-994 IRGBC30MD2-S SMD-220 transistor c374 C374
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1143 IRGBC30MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

Contextual Info: PD- 91751A International Rectifier MR IRG4IBC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • V e ry Low 1 .5 9 V v o ta g e drop V ces = 600V • 2 .5 kV , 6 0 s insulation voltage • 4 .8 m m cre a p ag e distance to heatsink

toshiba 6jg11

Abstract: 12GH11 12JG11 12JH11 6JG11 12GG11 IF-10A 6DG11 6GG11 12BG11
Contextual Info: 9097250 1ñ dË TOSHIBA 39C DI S C R E T E /O P T O J t D^SSD 0 0 0 5 2 4 3 D T - O J - / / FAST RECOVERY DIODE | ~ - 02243 600V 6A 6 JG 1 1 M A X IM U M RATINGS C H A R A C T E R IS T IC SY M BO L 100 200 6DG11 Repetitive Peak R everse Voltage

Mosfet

Abstract: SSF12N60F
Contextual Info: SSF12N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 0.55Ω (typ.) ID 12A TO220F Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced Process Technology Special designed for PWM, load switching and general purpose applications

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

STTA1212D

Abstract: il6a
Contextual Info: STTA1212D  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS 12A VRRM 1200V trr typ 50 ns VF (max) 2.0 V K A IF(AV) FEATURES AND BENEFITS A K ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN

Contextual Info: DSEI 120 Fast Recovery Epitaxial Diode FRED VRSM V 1200 VRRM C A Type IFAVM = 109 A VRRM = 1200 V = 40 ns trr TO-247 AD V 1200 C DSEI 120-12A A C A = Anode, C = Cathode Symbol Test Conditions Maximum Ratings IFRMS IFAVM ÿÿ① IFAV ② IFRM TVJ = TVJM TC = 60°C; rectangular, d = 0.5