7C186 Search Results

L9101

Abstract: CY7C185-55PC CY7C185-55DC 7C185-25 CY7C185 CY7C186 CY7C185-15VC CY7C185-15VC die CY7C185-35PC
Contextual Info: CY7C185 7C186 CYPRESS SEMICONDUCTOR Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed The CY7C185 and CY 7C186 are high-perform anceC M O S static R A M sorganized as 8192 w ords by 8 bits. Easy m em ory expan­

CY7C185A-20LMB

Abstract: 7c186a CY7C186A-20DMB C105a CY7C185A CY7C186A-45DMB Y7C185 ZF78 CY7C185A-45LMB
Contextual Info: CYPRESS S E MI CONDUCTOR m 4GE D 250=1^2 DGOSGQÖ 7 H I C Y P 7-V£-23-/Z CY7C185A 7C186A C Y PR FSS SEMICONDUCTOR F unctional D escrip tion Features Automatic power-down when deselected CMOS for optimum speed/power High speed - 20 ns Low active power -

Contextual Info: 86 7C186 8Kx8 Static RAM Features provided by an active LOW chip enable CE1 , an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state drivers. The device has an automatic power-down feature (CE1), reducing the power consumption by over 80%

7c186

Abstract: CY7C185-15VC die 7C185
Contextual Info: CY7C185 7C186 CYPRESS SEMICONDUCTOR Features 8,192 x 8 Static R/W RAM the memory. When CEj and WE inputs are both LOW and CE2 is H IG H , data on the The CY7C185 and 7C186 are high-per- eight data input/output pins I/Oo through 1/ formanceCMOS static RAMs organized as O7 is written into the memory location ad8192 words by 8 bits. Easy memory expan­ dressedby the address present on the address

ATPA

Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C

cmos SRAM 35ns 8k X 8 dip

Abstract: 7C166 CY7C161 CY7C162 CY7C164 CY7C166 CY7C185 CY7C186 CY7C187 7C164
Contextual Info: Qualification Report January 1992 QTP 91094 64K SRAM FAMILY MARKETIN G DEVICE PART NBR DESCRIPTION CY7C161 16K x 4 SIO CY7C162 16K x 4 (SIO) CY7C164 16K x 4 CY7C166 (OE) CY7C185 8K x 8 7C186 8K x 8 (.6 DIP) CY7C187 64K x 1 Version 1.2 PRODUCT DESCRIPTION (for qualification)

CY7CI85

Abstract: CY7C185A-55DMB
Contextual Info: CY7C185A 7C186A CYPRESS SEMICONDUCTOR 8 ,1 9 2 x 8 Static RAV RAM enable W £ inputs are both LOW, and the chip enable two (CE2) input is HIGH. Data The CY7C185A and 7C186A are high- on the eight I/O pins (I/Oo through I/O7) is performance CMOS static RAMs orga­ written into the memory location specified

81c78

Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
Contextual Info: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M

CY7C186-45PC

Abstract: CY7C186-55PC 7C186-20PC
Contextual Info: CY7C185 7C186 CYPRESS SEMICONDUCTOR Features Automatic power-down when deselected CMOS for optimum speed/power High speed - 20 ns Low active power - 550 mW Low Standby Power - 110 mW TTL-compatible inputs and outputs Capable of withstanding greater than

MSM 6290

Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

CY7C185A

Abstract: 7C186A-35 7C186A-55 7C185A-55 7c186a 7C116 7C186A-25
Contextual Info: CYPRESS SEMICONDUCTOR MbE D B ESflSbb? OdDbbGM b E3CYP CY7C185A 7C186A 'T M ^ V h -X V CYPRESS SEMICONDUCTOR Features Automatic power-down when deselected CMOS for optimum speed/power High speed — 20 ns Low active power — 990 mW Low standby Power — 220 mW

Contextual Info: BAY 6 19S2 Data Sheet March 1992 L % AT&T Microelectronics 7C186 High-Speed CMOS SRAM 64 Kbits 8K x 8 , Flash Clear Features • High-speed read-access time — 12 ns maximum access time Plug-compatible with IDT7165 ■ High-speed flash clear Low-power operation

EPM5128LC

Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C

CY7C186

Abstract: CY7C186-20PC CY7C186-20ZC CY7C186-25PC 7C186-20 C1863
Contextual Info: 86 7C186 8Kx8 Static RAM Features provided by an active LOW chip enable CE1 , an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state drivers. The device has an automatic power-down feature (CE1), reducing the power consumption by over 80%

CY7C18S

Abstract: 7C185-12 7C185-20 A10C A12C CY7C185 CY7C186 CY7C185-15VC CY7C185-45PC CY7C185-55PC
Contextual Info: MbE » CYPRESS SEMICONDUCTOR E3 ESfl'JbtiS Q G Q biTS 1 Q C Y P •. CYPRESS SEMICONDUCTOR — 10 ns Low active power — 935 mW Low Standby Power — 220 mW T T L - c o m p a t ib le in p u ts a n d o u tp u ts Capable of withstanding greater than 2001V electrostatic discharge

27HC642

Abstract: 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

7C185

Abstract: sumitomo epoxy 64K SRAM Cypress 7C166 7C164
Contextual Info: Qualification Report Nov 1993, QTP 92281 64K SRAM 256K "CHOP" Fab 3 (Bloomington, Mn) QUALIFICATION MARKETING PART NUMBER CY7C161/A* CY7C162/A* CY7C164/A* CY7C166/A* CY7C185/A* 7C186/A* CY7C187/A* DEVICE DESCRIPTION 16K x 4 Static R/W RAM, Separate I/O

Contextual Info: CY7C185A 7C186A ¡zL sE r r i r CYPRESS 'W SEMICONDUCTOR = 8,192 x 8 Static R /W RA M Features Functional Description • A utom atic pow er-dow n w hen deselected • C M O S fo r o p tim u m speed/pow er The CY7C185A and 7C186A are highperformance CMOS static RAMs orga­

EPM5128LC

Abstract: EPM5128GC epm5064lc-1 EPM5128LC1 59628867809r 5962-8984106LX EPM5128GI 7C19945DMB EPM5130GC-1 5962-8867812rx
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 5962-8753903LX 5962-8753902LX CY21L49-55C CY21L49-45C CY7C281 CY7C281A 5962-8863701LX 5962-8753902LX CY6116A-45C CY6116A-35C CY7C286 CY27H512 5962-8867003LX 5962-8867002LX CY6116A-55C CY6116A-45C

LS 2027

Abstract: 7C165
Contextual Info: CY7C185A 7C186A CYPRESS SEMICONDUCTOR Features 8 ,1 9 2 x 8 Static R/W RAM F unctional D escrip tion A u tom atic power-down w hen d eselected C M O S for op tim u m sp eed /p ow er H igh speed — 20 ns Low active power — 688 m W Low stand b y Pow er

Contextual Info: CY7C185A 7C186A f ' 1V P ' P ] 7 Q C SEMICONDUCTOR 8 ,1 9 2 x 8 Static R /W RAM enable two CE2 input is HIGH. Data on the eight I/O pins (I/Oo through I/O7) is written The CY7C185A and 7C186A are high- into the memory location specified on the performance CMOS static RAMs orga­ address pins (Ao through A 12).