75N 28 Search Results

5n06

Abstract: w75n06 75n06
Contextual Info: SGS-THOMSON 75N 06/fi S T W 7 5 N 06 sth N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V S TH 75N 06 STH75N06FI S TH 75N 06 • • . ■ ■ . ■ ■ dss 60 V 60 V 60 V R DS on Id < 0 .0 1 4 ß < 0 .0 1 4 ß < 0 .0 1 4 ß 75 A 48 A 75 A T Y P IC A L RDS(on) = 0.011 Q

MG74n

Abstract: MG75N oki cross MG73N inverter ic 3524 application
Contextual Info: DATA S HEET O K I A S I C P R O D U C T S MG73N/74N/75N 0.22µm Customer Structure Array August 2002 MG73N/74N/75N ii 0.22µm Customer Structure Array Oki Semiconductor CONTENTS

svco

Abstract: OKI special feature up counter SPLL22A
Contextual Info: DATA SHEET O K I A S I C P R O D U C T S MG73N/74N/75N CSA 0.22µm Phase-Locked Loop SPLL22x Macrofunction Family August 2002 Document Reference: Version 2.0 SPLL22-P02 ii MG73N/74N/75N CSA 1. 0.22 µm PLL (SPLL22x) Macrofunction Family GENERAL DESCRIPTION

Contextual Info: LT1213CS8 Linear ICs Dual General Purpose Op Amp status Military/High-RelN Input Bias Current Max. A 220n Unity Gain BW (Hz)28MÂ V(io) Max. (V)700u I(io) Max. (A)75n Com Mode Inp Range (VICR) Input Resistance Typ. (Ohms) Temp Coef. of VIO3.0u P(D) Max. (W)

DDR200

Abstract: DDR266A DDR266B IBMN612404GT3B IBMN612804GT3B IBMN62540 IBMN62580 128MB PC266
Contextual Info: IBMN612404GT3B IBMN612804GT3B 128Mb Double Data Rate Synchronous DRAM Preliminary Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency MHz * DDR266A (7N) DDR266B (75N) DDR200 (8N) 133 143 100 133 100 125 * Values are nominal (exact tCK should be used).

DDR200

Abstract: DDR266A DDR266B IBMN62540 IBMN625404GT3B IBMN62580 IBMN625804GT3B
Contextual Info: IBMN625404GT3B IBMN625804GT3B 256Mb Double Data Rate Synchronous DRAM Preliminary Features CAS Latency and Frequency CAS Latency Maximum Operating Frequency MHz * DDR266A (7N) DDR266B (75N) DDR200 (8N) 133 143 100 133 100 125 2 2.5 * Values are nominal (exact tCK should be used).

Contextual Info: IBMN612404GT3B IBMN612804GT3B 128Mb Double Data Rate Synchronous DRAM Preliminary Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency MHz * DDR266A (7N) DDR266B (75N) DDR200 (8N) 133 143 100 133 100 125 * Values are nominal (exact tCK should be used).

Contextual Info: CA358AG Linear ICs Dual General Purpose Op Amp status Military/High-RelN Input Bias Current Max. A 200n Unity Gain BW (Hz) V(io) Max. (V)5.0m I(io) Max. (A)75n Com Mode Inp Range (VICR)28 Input Resistance Typ. (Ohms) Temp Coef. of VIO20u P(D) Max. (W)180m

marking 950N

Contextual Info: Common Mode Chokes CTCMS3F Series From 35 µH to 1600 µH www.ctparts.com SPECIFICATIONS Parts are available in ± 35% inductance tolerance only. Part Number CTCMS3F-35N CTCMS3F-50N CTCMS3F-75N Inductance µH (1-2 / 4-3) 35 50 75 Rated Current (A) Max. 5.70

Contextual Info: Common Mode Chokes CTCMS3F Series From 35 µH to 1600 µH www.ctparts.com SPECIFICATIONS Parts are available in ± 30% inductance tolerance only. Part Number CTCMS3F-35N CTCMS3F-50N CTCMS3F-75N Inductance µH (1-2 / 4-3) 35 50 75 Rated Current (A) Max. 5.70

CTCMS3F

Abstract: marking 950N
Contextual Info: Common Mode Chokes CTCMS3F Series From 35 µH to 1600 µH www.ctparts.com SPECIFICATIONS Parts are available in ± 35% inductance tolerance only. Part Number CTCMS3F-35N CTCMS3F-50N CTCMS3F-75N Inductance µH (1-2 / 4-3) 35 50 75 Rated Current (A) Max. 5.70

Contextual Info: IBMN625404GT3B IBMN625804GT3B 256Mb Double Data Rate Synchronous DRAM Preliminary Features CAS Latency and Frequency CAS Latency Maximum Operating Frequency MHz * DDR266A (7N) DDR266B (75N) DDR200 (8N) 133 143 100 133 100 125 2 2.5 * Values are nominal (exact tCK should be used).

Contextual Info: LT1213CN8 Linear ICs Dual General Purpose Op Amp status Military/High-RelN Input Bias Current Max. A 220n Unity Gain BW (Hz)28MÂ V(io) Max. (V)700u I(io) Max. (A)75n Com Mode Inp Range (VICR) Input Resistance Typ. (Ohms) Temp Coef. of VIO3.0u P(D) Max. (W)

IBM0612804GT3B

Abstract: PC200 128MB PC266
Contextual Info: IBM0612404GT3B IBM0612804GT3B 128Mb Double Data Rate Synchronous DRAM Advance Rev 0.2 Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency MHz * PC266A (-7N) PC266B (-75N) PC200 (-8N) 133 143 125 133 100 125 * Values are nominal (exact tCK should be used).

75N03HDL

Abstract: 75N03 75n03h 4456 mosfet mosfet 4456
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information HDTM O S E -F E T High D ensity P o w er FET D2PAK fo r S u rfa c e M ount M T B 75N 03H D L M otorola Preferred Device TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS N-Channel Enhancement-Mode Silicon Gate

208H

Contextual Info: Schem atic: MODULAR RJ45 JACK TX JS JS 1 J7 1 JS 1 J5 1 J4 1 J3 | J2 1 J 1 1 S h ld 1 1 J7 o- 4 JS J5 5 - 2 3 °- J+ RX J3 J2 J1 Shld 1 ’,75 n j 7 5 D< UPPER ROW 75n <7sn _L lODOpF — 2KV Electrical Specifications: 25DC TURNS RATIO: TX 1CT:1CT±3% , Is o la tio n V o lta g e :

RJ45 modular jack

Abstract: 208H
Contextual Info: Sch em atic: MODULAR RJ45 JACK TX 6 O- J8 J7 5 O- J6 4 O- J5 J4 J3 RX 3 O- J2 2 O- 1 J1 Shld O - <75 n | 7 5 UPPER ROW n< 7 5 n _L T <75n 1000pF 2KV E lectrical S p ecificatio n s: 25°C TURNS RATIO: TX 1CT:1CT±3%, RX 1CT:1CT±3% Isolation Voltage: 1500 Vrm s INPUT to OUTPUT

op 30MHZ

Contextual Info: S c h e m a t ic : MODULAR RJ45 JACK TX e o - 5 o- 4 o - 3 o- w RX 2 «1 ô - 75 n < 7 5 U P P E R ROW 75n <7sn i> _L — 1000pF 2KV E le c t r ic a l S p e c ific a tio n s : 25DC TURNS RATIO: TX 1CT:1CT±3%. RX 1CT:1CT±3% Isolation Voltage: 1500 Vrm s INPUT to OUTPUT

Contextual Info: AN2241 AN2241 N • m . T S C fch^ J I D E S / V i d e o C a m e r a N T S C O u t p u t m A N 2241 ì , H i t> 7 - t ' r t i l * 7 W tc I r f l f ? i l t z “ L O P A C ” -> > - x<r> Vy'irmt, 75n i&mif*?-, 7 — * ¥ 7 ^ - ^ - + «iE, t -v f f l ] J ± E & £ ? £ F*3» L X n i t .

VN1210N5

Abstract: BR 115N sfn02202 sfn02802 sfn02812 RRF530
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max Of) (A) rDs (on) (Ohms) Po Max (W) 9FS Min (S) V GS<tri) Max (V) Cin Max tr Max tf Max (P) (8) (8) T Opw Max Package Style (°C) MOSFETs, N-Channel Enhancement-Type (Cont'd) . . . . 5 • . . .10

BA101D

Abstract: J04075 sars0 S0146 2N5529 2N6482 B40-12A SGSIF464 TIP542 acrian inc
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2SC3748 BOlllA BOlllA 2N5327 SFT6200 (A) 2N5328 SMl2168 BU100A ~~~~~-O5 25 30 SVT250-05 SVT250-05 SVT300-05 SVT300-05 SVT300-05 S01457 2S01443 2S01445 2SD~:5A 35 40 TIP543 TIP543 2N5940 2N5939 TIP542

33482-1201

Abstract: 33472-120
Contextual Info: MX150 Sealed Connector System Applications The pre-assembled, submersible MX150™ is a high-performance connector system for challenging, rugged and harsh applications. The innovative MX150 Sealed Connector System is based upon the 1.50mm .060” ISO blade-type

Contextual Info: M in ia t u r e c o a x t h r e a d e d 40/240 S E R IE S , T N C B U L K H E A D J A C K S B u l k h e a d Jack SOLDER POT SOLDER POT ACCEPTS .060 DIA CONDUCTOR - SOLDER POT ACCEPTS .060 DIA CONDUCTOR son BJ40 UBJ40 75C2 w/ S o lder L ug .4375-28UNEF-2A .500-2BUNEF-2A—'

2SA1005K

Abstract: BC512 2N3644 2N5383 BC251 LOW-POWER SILICON PNP KT310 BC204B 2N601 2SA1005L
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 MPS3906 MPS3906 MPS3906 NS3906 NTM3906 NTM3906 PET3906 PXT3906 PXT3906 TP5383 YTS3906 2N3906 2N5383 2N5366 2N5366 2N5366 0402 0402 BFY64 2N5367 ~~':5U3~ 25 30 35 40 MPS6533M MMCM2907 MPS6534