66TSOP Search Results

K4H281638O-LCCC

Abstract: 8Mb samsung SDRAM K4H281638O
Contextual Info: Rev. 1.0, May. 2010 K4H281638O 128Mb O-die DDR SDRAM 66TSOP- II with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

K4H510838J

Abstract: K4H511638J
Contextual Info: Rev. 1.11, Aug. 2011 K4H510438J K4H510838J K4H511638J 512Mb J-die DDR SDRAM 60FBGA & 66TSOP- II with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

K4H561638N

Abstract: K4H560838N 266-pin K4H560438N samsung pinout 922
Contextual Info: Rev. 1.01, May. 2010 K4H560438N K4H560838N K4H561638N 256Mb N-die DDR SDRAM 66TSOP- II with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

K4H511638J

Abstract: K4H510838J K4H510838J-LC K4H511638J-BC K4H511638J-LC K4H510438J K4H511638JLC
Contextual Info: Rev. 1.1, Feb. 2011 K4H510438J K4H510838J K4H511638J 512Mb J-die DDR SDRAM 60FBGA & 66TSOP- II with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

k4h641638q

Contextual Info: Rev. 1.1, Sep. 2010 K4H641638Q 64Mb Q-die DDR SDRAM 66TSOP- II with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

Contextual Info: ESMT M13S64164A Revision History Revision 0.1 23 Oct. 2006 - Original Revision 0.2 (06 Jun. 2007) - Add BGA type spec Revision 0.3 (20 Jul. 2007) - Modify BGA assignment Revision 0.4 (01 Oct. 2007) - Modify IDD spec. Revision 1.0 (20 Nov. 2007) - Delete “Preliminary”

M312L5628MT0

Abstract: DDR266A
Contextual Info: M312L5628MT0 184pin 1U Registered DDR SDRAM MODULE 2GB DDR SDRAM MODULE 256Mx72 (128Mx72 *2)based on 128Mx4 DDR SDRAM) Registered 184pin DIMM 72-bit ECC/Parity Revision 0.0 October. 2001 - -1 - Rev. 0.0 Oct. 2001 M312L5628MT0 184pin 1U Registered DDR SDRAM MODULE

Contextual Info: M383L5628MT1 184pin Registered DDR SDRAM MODULE 2GB DDR SDRAM MODULE 256Mx72 (128Mx72 *2)based on 128Mx4 DDR SDRAM) Registered 184pin DIMM 72-bit ECC/Parity Revision 0.3 May. 2002 - -1 - Rev. 0.3 May. 2002 M383L5628MT1 184pin Registered DDR SDRAM MODULE

M383L2828

Contextual Info: M383L2828DT1 1GB DDR SDRAM MODULE 128Mx72 (64Mx72 *2)based on 64Mx4 DDR SDRAM) Registered 184pin DIMM 72-bit ECC/Parity Revision 0.1 May. 2002 - -1 - Rev. 0.1 May. 2002 M383L2828DT1 Revision History Revision 0.0 (Mar. 2002) 1.First release for internal usage.

Contextual Info: 512MB, 1GB, 2GB Registered DIMM Preliminary DDR SDRAM DDR SDRAM Registered Module 184pin Registered Module based on 512Mb C-die with 72-bit ECC 66 TSOP-II and 60 ball FBGA with Pb-Free RoHS compliant Revision 0.0 September. 2004 Rev. 0.0 September, 2004

M312L2920CZ3

Contextual Info: 512MB, 1GB, 2GB Registered DIMM DDR SDRAM DDR SDRAM Registered Module 184pin Registered Module based on 512Mb C-die with 72-bit ECC 66 TSOP-II and 60 ball FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

Contextual Info: 256MB, 512MB, 1GB Registered DIMM Preliminary DDR SDRAM DDR SDRAM Registered Module 184pin Registered Module based on 256Mb E-die x4, x8 with 1,700 / 1,200mil Height & 72-bit ECC Revision 0.0 Feb. 2003 Rev. 0.0 Feb. 2003 256MB, 512MB, 1GB Registered DIMM

K4H2G0638M

Contextual Info: 4GB Registered DIMM DDR SDRAM DDR SDRAM Registered Module TSOP-II 184pin Registered Module based on 1Gb M-die with 1,200mil Height & 72-bit ECC Revision 0.4 April, 2004 Rev. 0.4 April. 2004 4GB Registered DIMM DDR SDRAM Revision History Revision 0.0 (Mar, 2003)

Contextual Info: M383L2828DTS 184pin Registered DDR SDRAM MODULE 1GB DDR SDRAM MODULE 128Mx72 (64Mx72 *2)based on 64Mx4 DDR SDRAM) Registered 184pin DIMM 72-bit ECC/Parity Revision 0.1 Jan. 2002 - -1 - Rev. 0.1 Jan. 2002 M383L2828DTS 184pin Registered DDR SDRAM MODULE Revision History

Contextual Info: M312L5628MT0 184pin 1U Registered DDR SDRAM MODULE 2GB DDR SDRAM MODULE 256Mx72 (128Mx72 *2)based on 128Mx4 DDR SDRAM) Registered 184pin DIMM 72-bit ECC/Parity Revision 0.2 Jan. 2002 - -1 - Rev. 0.2 Jan. 2002 M312L5628MT0 184pin 1U Registered DDR SDRAM MODULE

MAX11

Contextual Info: 256MB, 512MB, 1GB Registered DIMM DDR SDRAM DDR SDRAM Registered Module 184pin Registered Module based on 256Mb E-die with 72-bit ECC 66 TSOP-II and 60 ball FBGA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

K4H560438C

Abstract: M312L2828CT0
Contextual Info: M312L2828CT0 184pin 1U Registered DDR SDRAM MODULE 1GB DDR SDRAM MODULE 128Mx72 (64Mx72 *2)based on 64Mx4 DDR SDRAM) Registered 184pin DIMM 72-bit ECC/Parity Revision 0.0 October. 2001 - -1 - Rev. 0.0 Oct. 2001 M312L2828CT0 184pin 1U Registered DDR SDRAM MODULE

DDR200

Abstract: DDR266A DDR266B M383L2828CT1
Contextual Info: M383L2828CT1 184pin Registered DDR SDRAM MODULE 1GB DDR SDRAM MODULE 128Mx72 (64Mx72 *2)based on 64Mx4 DDR SDRAM) Registered 184pin DIMM 72-bit ECC/Parity Revision 0.1 Dec. 2001 - -1 - Rev. 0.1 Dec. 2001 184pin Registered DDR SDRAM MODULE M383L2828CT1 Revision History

300b tube

Abstract: 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64
Contextual Info: Samsung Proprietary [ Shipping Quantity Information ] As of 2004-03-02 Divide DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM

CKE 2009

Abstract: M13S64164A CL301
Contextual Info: ESMT M13S64164A Operation Temperature Condition -40°C~85°C DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS

h5du1262

Contextual Info: 128Mb DDR SDRAM H5DU1262GTR-xxI This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Aug. 2009

Contextual Info: 512MB, 1GB, 2GB Registered DIMM DDR SDRAM DDR SDRAM Registered Module 184pin Registered Module based on 512Mb C-die with 72-bit ECC 66 TSOP-II and 60 ball FBGA with Pb-Free RoHS compliant Revision 1.0 February. 2004 Rev. 1.0 February, 2005 512MB, 1GB, 2GB Registered DIMM

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

ma 8630

Abstract: DDR200 DDR266A DDR266B M383L2828BT1
Contextual Info: M383L2828BT1 184pin Registered DDR SDRAM MODULE 1GB DDR SDRAM MODULE 128Mx72 (64Mx72 *2)based on 64Mx4 DDR SDRAM) Registered 184pin DIMM 72-bit ECC/Parity Revision 0.5 May. 2002 - -1 - Rev. 0.5 May. 2002 184pin Registered DDR SDRAM MODULE M383L2828BT1 Revision History