5BP TRANSISTOR Search Results

small signal transistor MOTOROLA

Abstract: w21 transistor MOTOROLA small signal transistor 2N3821JTX PHW4101 FIDL 5Bp transistor MOTOROLA TRANSISTOR
Contextual Info: MOTOROU Orderthis document by2N3621JTND SEMICONDUCTOR TECHNICAL DATA ● 2N3821JTX, JANS Processed per MlL4-19500/375 N4hannel, Depletion Mode Junction Field-Effect Transistor JFETs .designed for small-ignal, Iowoise amplifier applications. * ~,)> . .$$”

2C918HV

Abstract: chip die npn transistor
Contextual Info: MOTOROM Orderthis document by 2C818HVD SEMICONDUCTOR TECHNICAL DATA e 2C918HV Chip NPN Silicon Smal14ignal Transistor ,. .deeigned for VHF operation .11 in tuned amptifier/oscillator applications. ● SmalHgnal Power Gain — 15 dB Min @ 200 MHz . Noise Figure — 6.0 dB Max@ 60MHz

5Bp transistor

Abstract: 2C2369AHV IPHW41011-2 2c2369 transistor data 3150 chip die npn transistor
Contextual Info: -––. .-. .-– .— MOTOROU e Ordertils document bv 2C2369AWID SEMICONDUCTOR TECHNICAL DATA 2C2369AHV Chip NPN Silicon Small+ignal Transistor . . .deeignedfor genera~urpose I , ~~ ‘:.,t,l?. ,Y. .,.,. switching applications. Rating I Physical Characteristics:

Contextual Info: BC807 BC808 _ SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a SOT-23 plastic package fo r use in driver and ou tp u t stages o f aufio amplifiers in thick and thin -film hybrid circuits. N-P-N complements are BC817; R and BC818; R respectively.

w21 transistor

Abstract: 2C3251AHV 2C3X AICB
Contextual Info: MOTOROU Order this dooument by 2C3251AHV/D SEMICONDUCTOR TECHNICAL DATA o 2C3251AHV Chip . PNP Silicon Small-Signal Transistor III ,~4 , ~ti m - I Rating E o ELECTRICAL CHARACTE~@~,@UA = 25°C unlessOthetise noted.) Chamdu*$:# symbol I Mln Max I Unit OFF CHARACTERISll&$j?;!

2C3439HV

Abstract: 650C
Contextual Info: MOTOROM Order this document by 2CW9HWD SEMICONDUCTOR TECHNICAL DATA o ft. b-. ,.;y.,;~,?. .,.,~, .’, , Ill. ,$tlt , il[ill’ y, 2C3439HV Chip NPN Silicon Srnall+ignal Transistor . designed ~o for highvoltage, higburrent appliostions in switching and amplifier service.

2C3019HV

Abstract: 5Bp transistor Transistor 5bp
Contextual Info: MOTOROU Order ~le document by2C3019HV/D SEMICONDUCTOR TECHNICAL DATA e 2C3019HV Chip NPN Silicon Small*ignaI Transistor .deeigned for dc to VHF ampfifier applications and general+urpose switching. . V BR CEO = 80 Vdc . hFE = 100 Min @ 150 mAdc . VCE(sat) = 0.2 Vdc Ma @ 150 mAdc

2C2605HV

Abstract: raon
Contextual Info: MOTOROU . Orderthis document by 202605HVID SEMICONDUCTOR TECHNICAL DATA @ 2C2605HV Chi~ PNP Silicon Low+oise Amplifier Transistor . . .deaigned for hig~ain, ● Iowoise ,111, ,11 ,11 a ~ amplfier applications. N.F-= 5.0 dB @ 100 H, “3.0 dB @ 10 kHz MAXIMUM RATINGS

2N3634 MOTOROLA

Abstract: m21 transistor 2N3634 2N3637 transistor m21 MIL-19500 2N3634JTX 2N3635 2N3635JTX 2N3636
Contextual Info: MOTOROU Orderth18 document by2N3WWD SEMICONDUCTOR TECHNICAL DATA o 2N3634JTX, 2N3635JTX, 2N3636JTX, 2N3637JTX, JTXV JTXV, JANS JTXV, JANS JTXV, JANS Processed per MIL+-19500/357 PNP Silicon SmallSignal o General-Purpose Transistor Ic Collector Current,Maimurn

transistor 5cp

Abstract: 5Bp transistor 5Cp transistor 5DP transistor BC808 sot23 5bp 5bp sot23
Contextual Info: Philips Semiconductors Product specification PNP general purpose transistors BC807; BC808 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification.

Contextual Info: MOTOROLA Order this document by BFR93ALT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon HighĆFrequency Transistors BFR93ALT1 . . . designed primarily for use in high-gain, low-noise, small-signal UHF and microwave amplifiers constructed with thick and thin-film circuits using surface

2N3501 MOTOROLA

Abstract: 2N3501 k5c transistor 2N3501JAN AICB
Contextual Info: MOTOROU Orderthls document by 2N3501JANID SEMICONDUCTOR TECHNICAL DATA 2N3501JAN, JTX, JTXV, JANS Processed per MIL4-195001366 NPN Silicon SmallSignal Transistors .designed for genera~urpose switching and amplifier applications in hig~voltage .,!.\ ELECTRICAL

2N3506

Abstract: 2N3507 2N3506JTX 2N3506 MOTOROLA 2N3507JTX 2NW06 15-ADO
Contextual Info: MOTOROU Orderthis dooument bv2N850WWD SEMICONDUCTOR TECHNICAL DATA 2N3506JTX, JTXV 2N3507JTX, JTXV Processed per MIL+-~9500/349 NPN Silicon Small+ ignal Transistors . . designed for genera~urpose switchingapplications. .,. ,. CASE 7W TM05AD r- mntinued)

M036

Abstract: 2N3251AJAN PHM4101
Contextual Info: MOTOROW Order this document SEMICONDUCTOR TECHNICAL DATA by 2N3251AJAN/D e 2N3251AJAN, JTX Processed per MIL4-195001323 PNP Silicon Smal14ignal Transistors .designed for genera~urpose switching and amplifier applications. CASE 22*, TM06AA .,4., , ‘, ELECTRICAL CHARACTERlSTl~~#*25°C

2N3440 MOTOROLA

Abstract: 2n3439 motorola MOTOROLA 2N3440 2N3439 LF036 Y14W 5bp 2n 2N3439JAN 2N3440 2N3440JTX
Contextual Info: MOTOROU Orderthls document by 2N3439JANID SEMICONDUCTOR TECHNICAL DATA o 2N3439JAN, JTX, JTXV 2N3440JTX, JTXV Processed per MIL4-I 9500/368 NPN Silicon Small+ignal Transistors .designed for tighvoltage amplifier applications. MAXIMUM RATINGS Rsttng Symbol

2N2219A MOTOROLA

Abstract: 2N2219A 2N2219AJAN 4101 transistor
Contextual Info: MOTOROU SEMICONDUCTOR TECHNICAL DATA Order this document by 2N2219AJANID a 2N2219AJAN, JTX, JTXV, JANS Processed per MIL4-I 9500/251 NPN Silicon Small-ignal Transistors ., designed for genera~urpose switching and amplifier applications. CASE7$M, SWLE 1 T0205AD ~039

Q2N44

Abstract: 06AF 2N44 motorola MN transistor 2N4416AJTX
Contextual Info: MOTOROU Order this document by2N416AJTWD SEMICONDUCTOR TECHNICAL DATA o 2N4416AJTX, JTXV Processed per MlL-l 9500/428 N+hannel, Small+ignal Field Effect Transistor CASE 2W3, T=06AF .:’.~{.3” ELECTRICAL CHARACTERISTICS WA= #~@& *\A .*.<* Characterlstlc ., “$}$,w

w21 transistor

Abstract: 2N3764 2N3764JTX MIL-19500 MOTOROLA LON motorola MN transistor Motorola transistor 358
Contextual Info: . MoToRom Order this document by 2N3764~WD SEMICONDUCTOR TECHNICAL DATA ● 2N3764JTX, JTXV, JANS Processed per MIL+-19500/396 PNP Silicon Smal14ignal Transistor .designed for genera~urpose switching applications. ● Emtisr+ase Vohge * Colleotor Current — Cotinuous

Contextual Info: • bbS3T31 Q03M43C5 07T « A P X N AUER PHILIPS/DISCRETE BC807 BC808 b7E 3> y v . SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a SOT-23 plastic package for use in driver and output stages of aufio amplifiers in thick and thin-film hybrid circuits.

code marking 5Cp sot-23

Abstract: bc807 BC807-16 BC807-25 BC807-40 BC808 BC808-16 BC808-25 BC817 BC818
Contextual Info: • bbSB^ai □□2443’ì D7T M A R X N AUER PHILIPS/DISCRETE BC807 BC808 b7E J> SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a SOT-23 plastic package fo r use in driver and ou tput stages o f aufio amplifiers in th ick and th ln -film hybrid circuits.

TP5015

Abstract: NT 407 F TRANSISTOR
Contextual Info: MOTOROLA Order this document by TP5015/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor TP5015 . . . designed for 24 Volt UHF large–signal common emitter amplifier applications in industrial and commercial FM equipment operating in the 380 to

mrf1032

Abstract: motorola rf Power Transistor MOTOROLA POWER TRANSISTOR J 325 MOTOROLA TRANSISTOR 726 Common emitter amplifier case 244-04
Contextual Info: MOTOROLA Order this document by MRF1032/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor MRF1032 . . . designed primarily for large–signal output and driver amplifier stages to 1.0 GHz. • Designed for Class A Linear Power Amplifiers • Specified 25 Volt, 900 MHz Characteristics:

BC807C

Contextual Info: BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, In a SO T-23 plastic package fo r use in d rive r and o u tp u t stages o f audio am p lifie rs in th ic k and th in -film h y b rid circuits. N-P-N com plem ents are BC817, R and BC818; R respectively.

MHW6142

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MHW614ZD DATA . @ ?;~%&CATVAmpiifier . designed specifically for 550 MHz CATV applications. Features ion-im- MHW6142 planted arsenic emitier transistors with7.0 GHzfTand anallgold metallization system.