527M Search Results

RD07MUS2B

Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

RD07MUS2B

Abstract: RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor

GP 809 DIODE

Abstract: GP 839 DIODE RD01MUS2B 4406 mosfet diode zener 7.2v RD01MUS2B-101 gp 520 diode diode gp 805 mosfet vhf power amplifier GP 007 DIODE
Contextual Info: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from

marking 7W 66

Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041
Contextual Info: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15

RD07MUS2B

Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053
Contextual Info: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.

AN-UHF-098

Contextual Info: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15

GRM1882C1H

Abstract: RD01MUS2 GRM1882C1H150JA01 Single-Stage amplifier GRM1882C1H102JA01 4005A
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-087-A Date : 9th Oct. 2007 Rev. Date :22th Jun. 2010 Prepared : H.Sakairi S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS2 Single-Stage amplifier RF performance at f= 450-527MHz

RD07MUS2B

Abstract: f763 MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR 329J MOS 6509 mitsubishi MOSFET RD07MUS2
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor

GP 809 DIODE

Abstract: GP 007 DIODE
Contextual Info: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from

RD07MUS2B

Abstract: RD07MUS2
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor

Contextual Info: < Silicon RF Power MOS FET Discrete > RD10MMS2 RoHS Compliance, Silicon MOSFET Power Transistor,870MHz,10W OUTLINEDRAWING DESCRIPTION RD10MMS2 RoHS-compliant product is a MOS FET type transistor specifically designed for 870MHz RF power amplifiers applications.

RD01MUS1

Abstract: adj 2576
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-060-A Date : 19th Oct. 2004 Rev.date : 22th June. 2010 Prepared : M.Wada, S.Kametani Confirmed : T.Ohkawa Taking change of Silicon RF By MIYOSHI Electronics SUBJECT: RD01MUS1 RF Characteristics at Vdd=3.6/ 4.5/ 7.2V

diode KS 1060 - R

Abstract: MAX15053EWL T
Contextual Info: 19-5240; Rev 1; 3/11 TION KIT EVALUA BLE IL AVA A High-Efficiency, 2A, Current-Mode Synchronous, Step-Down Switching Regulator Features The MAX15053 high-efficiency, current-mode, synchronous step-down switching regulator with integrated power switches delivers up to 2A of output current.

AAT1230

Abstract: AAT1230-1 AAT1230IRN AAT1230ITP AAT1230ITP-1 12301
Contextual Info: AAT1230/1230-1 18V 100mA Step-Up Converter General Description Features The AAT1230/1230-1 is a high frequency, high efficiency boost converter capable of 18V maximum output voltage. The internal power switch can deliver 100mA load current. It is the ideal power solution

AS0860A-100/50

Contextual Info: The MILMEGA ‘AS’ Series 2000 Dual Band Class A Solid State Microwave Amplifier Range The AS0860 series of solid state power amplifiers follows the MILMEGA tradition for compact, upgradeable microwave power amplifier solutions with field proven reliability.

450h

Contextual Info: 1 FEATURES / 3 • 20 WATTS OUTPUT POWER • OUTPUT CURRENT UP TO 4A • STANDARD 2” X 1.6” X 0.4” PACKAGE • HIGH EFFICIENCY UP TO 87% • 2:1 AND 4:1 WIDE INPUT VOLTAGE RANGE • SIX-SIDED CONTINUOUS SHIELD • FIXED SWITCHING FREQUENCY • CE MARK MEETS 2006/95/EC, 93/68/EEC AND 2004/108/EC

AAT2511

Abstract: CDRH3D16 CDRH3D16-100 CDRH3D16-4R7 LQH32CN4R7M23
Contextual Info: AAT2511 Dual 600mA, 1MHz Step-Down DC/DC Converter General Description Features The AAT2511 is a member of AnalogicTech's Total Power Management IC TPMIC™ product family. It is comprised of two 1MHz step-down converters designed to minimize external component

ic 1619 fm circuit layout

Contextual Info: MK1716-01 SERIAL PROGRAMMABLE CLOCK WITH SPREAD SPECTRUM Description Features The MK1716-01 is a versatile serial programmable clock source which takes up very little board space. • Packaged in 28 pin SSOP • Operating voltage 3.3V • Serially programmable: user determines the output

AAT2511

Abstract: CDRH3D16 CDRH3D16-4R7 GRM219R61A475KE19 GRM21BR60J106KE19
Contextual Info: PRODUCT DATASHEET AAT2511 SystemPowerTM Dual 600mA, 1MHz Step-Down DC-DC Converter General Description Features The AAT2511 is a member of AnalogicTech’s Total Power Management IC TPMIC™ product family. It is comprised of two 1MHz step-down converters designed to

BSP fittings torque

Abstract: shell tellus 27 oil shell tellus 10 oil Mobil DTE LIGHT pydraul A200 BSPP fittings torque shell tellus 23 oil type and size crude oil pump M24x1 shell tellus 46 oil
Contextual Info: Issued September 2001 262-1643 Data Pack G Data Sheet Crimped hose assemblies A range of high quality flexible hydraulic hose assemblies with crimped end fittings. Manufacturers one piece fittings, which eliminate an incorrectly matched insert and sleeve possible with two

Hysol os4000

Abstract: hysol OS4000 epoxy cree c470 C460MB290-S0100 C470 C505 C527 CXXX-MB290-S0100 OS4000 hysol
Contextual Info: G•SiC Technology MegaBright LEDs CXXX-MB290-S0100 Features Applications MegaBright™ Performance – 11.0mW 460nm Deep Blue – 10.0mW (470nm) Blue – 8.0mW (505nm) Traffic Green – 7.0mW (527nm) Green • Outdoor LED Video Displays • Single Wire Bond Structure

Contextual Info: FIXED HIGH VOLTAGE RESISTORS; PLATE TYPE KAMAYA OHM RM1/2, 1, 2 1M ohm~1,000M ohm •Features 1. Available in two terminal styles. 2. High value range available from 1M ohm ~ 1,000M ohm. 3. Stable characteristics in pulse voltage applications. 4. Suitable for use in high voltage applications.

C460-MB290-S1600

Contextual Info: G•SiC Technology MegaBright LEDs CxxxMB290-Sxx00 Features Applications • MegaBright LED Performance – 460 & 470nm – MB-8 – 8.0mW min. – MB-10 – 10.0mW min. – MB-12 – 12.0mW min. – MB-14 – 14.0mW min. – MB-16 – 16.0mW min. 460nm

ILI9340 driver

Abstract: ILI9340 DBI 6-16 B144 regulator yx 805
Contextual Info: ILI9340 a-Si TFT LCD Single Chip Driver 240RGBx320 Resolution and 262K color Specification Preliminary Version: V0.12 Document No.: ILI9340DS_V012.pdf ILI TECHNOLOGY CORP. 8F, No. 38, Taiyuan St., Jhubei City, Hsinchu Country 302 Taiwan R.O.C. Tel.886-3-5600099; Fax.886-3-5670585