50 WATTS AMPLIFIER 10MHZ Search Results

AM003040SF-2H

Contextual Info: High Power Amplifier Module 10 – 3000MHz, 22dB, 10 Watts AM003040SF-2H January 2011 REV 4 DESCRIPTION AM003040SF-2H is an ultra-broadband High Power Amplifier designed for instrumentation, communication and Jamming applications. It operates from 10MHz to 3000MHz and typically delivers more than 10 watts 40dBm CW

SSM2131

Abstract: op amp 741 model PSpice code pmi dac-08 op amp 741 model PSpice PMI dac 08 2131 P op amp 741 model hSpice LF400 current mirrors wilson active crossover
Contextual Info: JUS a m ^ SSM-2131 ULTRA-LOW DISTORTION, HIGH-SPEED AUDIO OPERATIONAL AMPLIFIER FEATURES • Low Distortion - DC to 40kHz, Av = +10. 0.01% Typ . 40V;jis Min • High Slew Rate • Gain-Bandwidth Product. 10MHzTyp

ATP10K100M

Abstract: 100w1000 Amplifier Research LA250
Contextual Info: 1st Half of 2014 The Complete Catalog For RF & EMC Testing RF Solid State Power Amplifiers Microwave Solid State and TWT Power Amplifiers MultiStar Multi-Tone Tester MultiStar Field Analyzers MultiStar Precision DSP Receiver RF and Microwave Antennas rf/microwave instrumentation

Contextual Info: MICROWAVE TECHNOLOGY 37E biam oG oooam? 5 D IMRUV SST SERIES SH/G VHF/UHF SILICON POWER FETS T O ^ - O Í 10 T 0 120 WATTS, 10MHz-1000MHz MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 415-651-6700 FAX 415-651-2208 lds[A] FEATURES • N-CHANNEL JFET, DEPLETION MODE

SU25

Abstract: SU50B10LS
Contextual Info: MICROWAVE TECHNOLOGY bb E D • bl241DD DQQD4E1 lb 3 HMRIilV SST SERIES SU/S VHF/UHF SILICON POWER FETS 10 TO 120 WATTS, 10MHz-500MHz MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 lds[A] FEATURES • N-CHANNEL JFET, DEPLETION MODE

Contextual Info: MICROWAVE TECHNOLOGY 37E.D • b l 2 4 1 0 0 0 0 0 0 1 4 3 Ô H MRÜ1V SST SERIES SU/G Mm ks VHF/UHF SILICON POWER FETS 10 TO 120 WATTS, 10MHz-500MHz MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 415-651-6700 FAX415-651-2208 T 'S - T - o i lds[A]

uhf microwave fet

Abstract: SH100D10LG SH120D10LG SH15A10LG SH25A10LG SH25B10LG SH50B10LG SH75D10LG SH80C10LG
Contextual Info: MICROWAVE TECHNOLOGY 37E D • blSMlOO ODQOLM? S ■ MRtdV SST SERIES SH/G VHF/UHF SILICON POWER FETS 1 ^ 3 9 - 0 f 10 TO 120 WATTS, 10MHz-1000MHz * MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 415-651-6700 FAX 415-651-2208 lds[A] FEATURES • N-CHANNEL JFET, DEPLETION MODE

4-1000a eimac

Abstract: 4-1000a Varian high voltage modulator capacitor Varian EIMAC 50 watts amplifier 10mhz neutralization push-pull 8166 EIMAC SK-506 Tube 4-1000a Varian
Contextual Info: 8166 4-1000A T E C HN I CA L DATA RADIAL-BEAM POWER TETRODE The EIMAC 8166/4-1000A is a radial-beam tetrode with a m axim um plate dissipation rating of 1000 watts. Intended for use as an amplifier, oscillator, or modulator, the 8166/4-1000A is capable of efficient operation

MOTOROLA SCR 1725

Abstract: 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901
Contextual Info: DL110/D REV 12 Wireless RF, IF and Transmitter Device Data Contents at a Glance Wireless RF, IF and Transmitter Device Data Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix Chapter One Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1–1

60W POWER AMPLIFIER

Abstract: UGF16060F UGF16060P UPF16060 transistor 10mhz 60w
Contextual Info: UPF16060 60W, 1.66 GHz, 26V Broadband RF Field Effect Transistor Power N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband Commercial and Industrial applications in the frequency band 1626 to 1660 MHz. Rated with a minimum output power of 60W, it is ideal for 16QAM, CDMA, TDMA,

Motorola transistors MRF 947

Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
Contextual Info: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,

15-watt audio amplifier

Abstract: MJ2252 MJ2251 Thordarson 200 watt audio amplifier ic MPS6513 MPS-65-13 MJ-2251
Contextual Info: MJ2251 SILICON MJ2252 ija @2 CASE 80 (o High-voltage NPN silicon power transistors, particu­ larly well suited for power output stages in television, radio, phonograph and other consumer product applications. N . q (TO-66) ) S T Y L E 1: PIN 1. B A S E

datel ADS130MC

Contextual Info: kOTEL' A D S -1 3 0 12-Bit, 10MHz Sampling A/D Converter INNOVATION a n d EXCELLENCE FEATURES • 12-Bit resolution • Internal Sample/Hold amplifier • 10MHz minimum throughput ■ Samples up to Nyquist • Functionally complete • Small 40-pin DIP • Low-power, 3.85 Watts

Contextual Info: A enuators Bias-Ts Calibra on Kit for VNA DC Blocks Limiters Low Noise Amplifiers Modulators Notch Filters Power Amplifiers Terminators May 2014 LiConn designs, develops, and manufactures high performance, high quality, and cost compe ve RF/Microwave products. The products cover frequency bands

WATKINS JOHNSON mixer

Abstract: vari-l 1785 TETRA etch magnum microwave Magnum Microwave mixer BD256 WATKINS JOHNSON design of Circular Patch Antenna in ISM Band Avantek mixer BPD5-0767-072SA
Contextual Info: There is a new leader and source for your RF & microwave systems and components … Spectrum Microwave. Combining the people, products and technologies from FSY Microwave, Salisbury Engineering, Q-Bit, Magnum Microwave, Radian Technologies and Amplifonix into a single

op amp 741 model PSpice

Abstract: SSM2131S
Contextual Info: ANALOG DEVICES □ Ultra-Low Distortion, High Speed Audio Operational Amplifier SSM-2131 FEATURES The SSM-2131 's common-mode rejection of 80dB minimum over a± 1 1 range is exceptional for a high-speed amplifier. HighCMR, combined with a minimum 500V/mV gain into a 10kQ load en­

UGF21090

Abstract: UGF21090F UGF21090P 50 watts amplifier 10mhz
Contextual Info: UGF21090 90W, 2.17GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM single and Multi-Carrier power amplifiers

2000 PWM hybrid

Abstract: hybrid pwm 2000 82521 PQ-32/43a Hall
Contextual Info: PWR-82521 PRELIMINARY 3-PHASE DC MOTOR TORQUE CONTROLLER PWM duty cycle of the output, thus controlling the motor current. The PWR-82521 can be tuned by using an external Proportional-Integral (PI) regulator network in conjunction with the internal error amplifier.

transistor 10mhz 60w

Abstract: UGF21060 UGF21060F UGF21060P mosfet class ab rf
Contextual Info: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class

UGF21030F

Abstract: UGF21030 UGF21030P 300GP
Contextual Info: UGF21030 30W, 2.1 GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class

op amp 741 model PSpice code

Abstract: SSM2131 SSM2131P op amp 741 model PSpice SSM2131S Spice Model TL071 op amp 741 model hSpice CS 2131 mosfet 500 watts audio amplifier pmi dac-08
Contextual Info: ANALOG DEVICES Ultra-Low Distortion, High Speed Audio Operational Amplifier SSM-2131 FEATURES • • • • • Low Distortion - DC to 40kHz, Av = + 1 0 .0.01 % Typ High Slew R ate. 40V/ns Min

UGF19125

Abstract: UGF19125F UGF19125P
Contextual Info: UGF19125 125W, 2.0 GHz, 26V, Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency bands from 1.9 to 2.0 GHz. Suitable for TDMA, N-CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class AB

74HCT06

Contextual Info: ADS-119 lEQMnEDJ Low-Power, 12-Bit, 10MHz Sampling A/D Converters INNOVATION and EXCELLENCE FEATURES • • • • • • • • • • 12-Bit resolution 10MHz minimum sampling rate Functionally complete Small 24-pin DDIP Requires only ±5V supplies Low-power, 1.8 Watts

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA