4600 FET Search Results

Contextual Info: SIEMENS ICs for Communications PCI Interface for Telephony/Data Applications PITA PSB 4600 Version 1.1 Preliminary Data Sheet 06.98 DS 1 PSB 4600 Revision History: Current Version: 06.98 P revious Version: Page in previous Version Page (in current V ersion)

Contextual Info: SIEMENS ICs for Communications PCI Interface for Telephony/Data Applications PITA PSB 4600 Version 1.2 Preliminary Data Sheet 12.98 DS 1 PSB 4600 Revision History: Current Version: 12.98 Previous Version: Page in previous Version Page (in current Version)

25c020

Abstract: AD10 AD11 AD12 AD14 ISAR34 PSB4595 PSB4596 AD31-8 PSB4600
Contextual Info: S IE M E N S ICs for Communications PCI Interface for Telephony/Data Applications PITA PSB 4600 Version 1.1 Preliminary Data Sheet 06.98 DS 1 This Material Copyrighted By Its Respective Manufacturer PSB 4600 Revision History: Current Version: 06.98 Previous V ersion:

MATERIAL SAFETY DATA SHEET

Abstract: AD10 AD11 AD12 AD14 ISAR34 PSB4595 PSB4596 PSB4600 TH2028.3
Contextual Info: ICs for Communications PCI Interface for Telephony/Data Applications PITA PSB 4600 Version 1.2 Preliminary Data Sheet 12.98 DS 1 PSB 4600 Revision History: Current Version: 12.98 Previous Version: Page Page in previous (in current Version Version) Subjects (major changes since last revision)

smd diode marking code t056

Abstract: xf075 xf017 tyco igbt module 25A Thermistor PTC 265V* xf017 XF090 raychem* XF090 xf065 PolySwitch Resettable Devices xf250 PTC XF010
Contextual Info: Circuit Protection Business Unit Headquarters 308 Constitution Drive, Building H Menlo Park, CA USA 94025-1164 Tel : 800 227-7040, (650) 361-6900 Fax : (650) 361-4600 www.circuitprotection.com www.circuitprotection.com.hk (Chinese) www.tycoelectronics.com/japan/raychem (Japanese)

Contextual Info: Preliminary Datasheet RJK1209JPE 120V - 80A - N Channel Power MOS FET High Speed Power Switching R07DS0691EJ0100 Rev.1.00 Mar 08, 2012 Features • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 14 mΩ typ. Low input capacitance: Ciss = 4600 pF typ

full bridge with IRFP450 schematic

Abstract: CPWR-AN02 smps fan speed control 4h sic irfp450 mosfet full bridge HFA08TB60 IRFP450 full bridge 100C IRFP450 Cree SiC MOSFET
Contextual Info: 600 V, 1- 40 A, Schottky Diodes in SiC and Their Applications Anant Agarwal, Ranbir Singh, Sei-Hyung Ryu, James Richmond, Craig Capell, Scott Schwab, Brice Moore and John Palmour Cree, Inc, 4600 Silicon Dr., Durham, NC 27703, Anant_Agarwal@cree.com Ph. 919 313-5539, Fax: (919) 313-5696

full bridge with IRFP450 schematic

Abstract: irfp450 mosfet full bridge 600 watt smps schematic switching with IRFP450 schematic sic diode 4h sic "silicon carbide" FET 500 WATT smps ixys dsei DSEI 12 06A
Contextual Info: 600 V, 1- 40 A, Schottky Diodes in SiC and Their Applications Anant Agarwal, Ranbir Singh, Sei-Hyung Ryu, James Richmond, Craig Capell, Scott Schwab, Brice Moore and John Palmour Cree, Inc, 4600 Silicon Dr., Durham, NC 27703, Anant_Agarwal@cree.com Ph. 919 313-5539, Fax: (919) 313-5696

UniPHY

Abstract: vm 30 cpu Sandy Bridge xeon e5-2400 intel xeon e5-2400 PBAR23SZ Xeon e5 2600 v2 4H11 intel Sandy Bridge intel I5-750
Contextual Info: Intel Xeon® Processor E51600/2400/2600/4600 E5-Product Family Product Families Datasheet- Volume Two May 2012 Reference Number: 326509-003 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS

6N80

Abstract: IXTN 36N50 C 40N160 40N140 ixtn 79n20 30N45 irfp 240 IXTK33N50 IXTN21N100 IRFP
Contextual Info: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode t jm = 150°c ► New V p >D25 Tc = 25°C A DS on Tc = 25°C a 200 30 42 50 IRFP 254 250 ► IRFP 264 thJC K/W W 300 4 180 360 140 0.65 190 4600 285 400 220 0.42 300 360 max. max. max. 68

LTM4600

Abstract: LTM4600IV#PBF
Contextual Info: LTM4600 10A High Efficiency DC/DC µModule U FEATURES DESCRIPTIO • The LTM 4600 is a complete 10A, DC/DC step down power supply. Included in the package are the switching controller, power FETs, inductor, and all support components. Operating over an input voltage range of 4.5V to 20V, the

Contextual Info: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison

Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison

CGHV96050F2

Abstract: CGHV96
Contextual Info: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison

Contextual Info: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison

Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison

CGHV96050F2

Contextual Info: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison

40VPulse

Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison

Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison

CGHV96100F1

Abstract: taconic
Contextual Info: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison

Contextual Info: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison

CGHV96050F1

Contextual Info: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison

Contextual Info: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison

LTM4600

Abstract: ALUMINUM ELECTROLYTIC CAPACITOR SURFACE MOUNT G4 100UF 6V transistor t18 FET
Contextual Info: LTM4600 10A High Efficiency DC/DC µModule U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Complete Switch Mode Power Supply Wide Input Voltage Range: 4.5V to 20V 10A DC, 14A Peak Output Current Parallel Two µModules for 20A Output Current