4600 FET Search Results

25c020

Abstract: AD10 AD11 AD12 AD14 ISAR34 PSB4595 PSB4596 AD31-8 PSB4600
Contextual Info: S IE M E N S ICs for Communications PCI Interface for Telephony/Data Applications PITA PSB 4600 Version 1.1 Preliminary Data Sheet 06.98 DS 1 This Material Copyrighted By Its Respective Manufacturer PSB 4600 Revision History: Current Version: 06.98 Previous V ersion:

smd diode marking code t056

Abstract: xf075 xf017 tyco igbt module 25A Thermistor PTC 265V* xf017 XF090 raychem* XF090 xf065 PolySwitch Resettable Devices xf250 PTC XF010
Contextual Info: Circuit Protection Business Unit Headquarters 308 Constitution Drive, Building H Menlo Park, CA USA 94025-1164 Tel : 800 227-7040, (650) 361-6900 Fax : (650) 361-4600 www.circuitprotection.com www.circuitprotection.com.hk (Chinese) www.tycoelectronics.com/japan/raychem (Japanese)

Contextual Info: Preliminary Datasheet RJK1209JPE 120V - 80A - N Channel Power MOS FET High Speed Power Switching R07DS0691EJ0100 Rev.1.00 Mar 08, 2012 Features • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 14 mΩ typ. Low input capacitance: Ciss = 4600 pF typ

4600 fet transistor

Abstract: LTM4600 LTM4600S n20 n21 fet sanyo CAP 330uF 35V 320 5400 capacitor 4600 fet LTM4600EV LTM4600IV PN01
Contextual Info: Electrical Specifications Subject to Change LTM4600 10A High Efficiency DC/DC µModule U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Complete Switch Mode Power Supply Wide Input Voltage Range: 4.5V to 20V 10A DC, 14A Peak Output Current

LTM4600

Abstract: PN01 transistor marking A21 4600P LTM4600EV LTM4600IV 4600 fet transistor 15V REGULATOR 78 L15 transistor J6 LTM4600S
Contextual Info: Electrical Specifications Subject to Change LTM4600 10A High Efficiency DC/DC µModule U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Complete Switch Mode Power Supply Wide Input Voltage Range: 4.5V to 20V 10A DC, 14A Peak Output Current

LTM4600

Contextual Info: LTM4600 10A High Efficiency DC/DC µModule FEATURES n n n n n n n n n n n n n n DESCRIPTION Complete Switch Mode Power Supply Wide Input Voltage Range: 4.5V to 20V 10A DC, 14A Peak Output Current Parallel Two µModule DC/DC Converters for 20A Output Current

LTM4600

Contextual Info: LTM4600 10A High Efficiency DC/DC µModule Features n n n n n n n n n n n n n n Description Complete Switch Mode Power Supply Wide Input Voltage Range: 4.5V to 20V 10A DC, 14A Peak Output Current Parallel Two µModule DC/DC Converters for 20A Output Current

1XTH5N100

Abstract: xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50
Contextual Info: lOIXYS_ Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type Vwa ÖWL T r ia r e V V 1 M * A iijfit CMpsiza dimensions S o w n OP bvftdw trft iw a in w id Equivalent «M ae Own. out­ line No mm mils IXTD67N10 IXTD75N10

4600 fet transistor

Abstract: 4600 fet 60Ghz transistor 60Ghz flange RF resistor 50 EIC8596-15
Contextual Info: EIC8596-15 8.50-9.60 GHz 15-Watt Internally Matched Power FET UPDATED 04/25/2006 FEATURES • • • • • • • • Excelics 8.50– 9.60GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +42.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression

IC ap 4600

Contextual Info: MOTOROLA Order this document by MC14600/D SEMICONDUCTOR TECHNICAL DATA Low-Power CMOS A L A R M 1C with Horn Driver T he M C 14600 A la rm IC is desig ned to sim p lify the process o f interfacing an alarm level vo lta g e con dition to a p ie zo e le ctric horn a n d/or LED. W ith an extrem e ly

nec 2501

Abstract: 2SJ673
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ673 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SJ673 is P-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SJ673 Isolated TO-220 MP-45F designed for high current switching applications.

EID1415-12

Contextual Info: EID1415-12 14.40-15.35 GHz 12-Watt Internally-Matched Power FET FEATURES • • • • • • • • 14.40-15.35 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41.0 dBm Output Power at 1dB Compression 5.5 dB Power Gain at 1dB Compression 23% Power Added Efficiency

4600 fet transistor

Abstract: 4600 fet
Contextual Info: Preliminary EIC6775-15 6.70-7.50 GHz 15-Watt Internally Matched Power FET ISSUED 10/08/2008 2X 0.079 MIN 4X 0.102 FEATURES • • • • • • 6.70– 7.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +42.0 dBm Output Power at 1dB Compression

Contextual Info: FLM4450-4C fujTtsu Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 36dBm Typ. • • • • • High Gain: G -j^B = 11dB (Typ.) High PAE: r iadd = 33% (Typ.) Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package

2SJ605

Abstract: 2SJ605-S 2SJ605-Z 2SJ605-ZJ MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ605 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SJ605

GaAs FETs

Abstract: FLM4450-8E
Contextual Info: F| .fjW-,. J FLM4450-8E Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 39dBm Typ. High Gain: G -j^B = 10.0dB (Typ.) High PAE: riadd = 32% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q

Contextual Info: F| .fjW-,. J FLM4450-4E Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 36dBm Typ. High Gain: G-j^B = 11dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q

Contextual Info: FLM4450-12F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 41.5dBm Typ. • High Gain: G1dB = 10.5dB (Typ.) • High PAE: hadd = 39% (Typ.) • Low IM3 = -46dBc@Po = 30.5dBm • Broad Band: 4.4 to 5.0GHz • Impedance Matched Zin/Zout = 50ohm

Contextual Info: FLM4450-25F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 44.5dBm Typ. • High Gain: G1dB = 9.5dB (Typ.) • High PAE: hadd = 40% (Typ.) • Low IM3 = -46dBc@Po = 33.5dBm • Broad Band: 4.4 to 5.0GHz • Impedance Matched Zin/Zout = 50ohm

Contextual Info: FLM4450-18F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 43.0dBm Typ. • High Gain: G1dB = 9.5dB (Typ.) • High PAE: hadd = 36% (Typ.) • Low IM3 = -46dBc@Po = 32.0dBm • Broad Band: 4.4 to 5.0 GHz • Impedance Matched Zin/Zout = 50ohm

Contextual Info: FLM4450-8F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 39.5dBm Typ. • High Gain: G1dB = 10.0dB (Typ.) • High PAE: hadd = 36% (Typ.) • Low IM3 = -46dBc@Po = 28.5dBm • Broad Band: 4.4 to 5.0GHz • Impedance Matched Zin/Zout = 50ohm

Contextual Info: FLM4450-4F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 36.5dBm Typ. • High Gain: G1dB = 11.0dB (Typ.) • High PAE: hadd = 37% (Typ.) • Low IM3 = -46dBc@Po = 25.5dBm • Broad Band: 4.4 to 5.0GHz • Impedance Matched Zin/Zout = 50ohm

Contextual Info: F| .ftp-. FLM4450-18DA J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 9.5dB (Typ.) High PAE: riadd = 32% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 4.4 ~ 5.0GHz

Contextual Info: FLM4450-25F - C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 44.5dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: riadd = 40% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm