TACONIC Search Results

FR4 dielectric

Contextual Info: 856934 1842.5 MHz SAW Filter Applications General purpose wireless Wireless infrastructure 3G, 4G, Multi-standard Repeaters Product Features Functional Block Diagram Top view Usable bandwidth 75 MHz Low loss Excellent power handling Single-ended operation

AGR19045XF

Contextual Info: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

TH 2190 HOT Transistor

Contextual Info: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

12065G105AT2A

Abstract: j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125BHR3 MRF7S18125BHSR3 Designed for GSM and GSM EDGE base station applications with

sawtek 855916

Abstract: D622
Contextual Info: 855916 2441.8 MHz SAW Filter Applications For ISM applications Bluetooth Product Features Functional Block Diagram Top view Usable bandwidth 83.5 MHz High Attenuation Single-ended operation Ceramic Surface Mount Package SMP No Impedance matching required for operation at 50Ω

MRF6S21140HR3

Abstract: MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 5, 2/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

RF35

Contextual Info: BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 01 — 4 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance

TRANSISTOR J601

Abstract: gp816 RF35 J2396 J249
Contextual Info: BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev. 01 — 3 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance

6603 Shenzhen

Abstract: AGR19045E AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor
Contextual Info: Preliminary Data Sheet April 2004 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19045E is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

J593

Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157
Contextual Info: Preliminary Data Sheet April 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

transistor 7350

Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496
Contextual Info: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

BLF6G20-110

Abstract: BLF6G20LS-110 RF35
Contextual Info: BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev. 03 — 13 January 2009 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance

Contextual Info: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−

Contextual Info: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these

MRF9030MBR1

Abstract: MRF9030MR1 100B7R5JP
Contextual Info: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

BLF7G20L-90P

Abstract: 1800 ldmos BLF7G20LS-90P RF35 PLW70
Contextual Info: BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 01 — 28 April 2010 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance

BLF7G20LS-140P

Abstract: 850 SMD Rework Station RF35
Contextual Info: BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance

AGR09030GUM

Abstract: JESD22-C101A RF35
Contextual Info: Preliminary Data Sheet August 2004 AGR09030GUM 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09030GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular

Z9 TRANSISTOR SMD

Abstract: AGR18045E JESD22-C101A agere c8 c1 transistor smd z9 grm216r71h transistor smd z8
Contextual Info: Preliminary Data Sheet November 2004 AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

100B0R1BW

Abstract: 100A1R5BW A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1 MW6IC2015NBR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 0, 2/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS

mosfet j172

Abstract: GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 0, 8/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base

Contextual Info: BLF10M6135; BLF10M6LS135 Power LDMOS transistor Rev. 1 — 24 June 2014 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance

remec Microwave

Abstract: Ne 6484 QBH-2001 c 2073 amplifier circuit diagram AR320 TLE 9834
Contextual Info: QBH-2001 PCS Band Low Noise Amplifier Revision: A1 Product Description FEATURES The QBH-2001 is a member of the REMEC Mobile Wireless Generation 2 Surface Mount Amplifier Family of products. The Generation Two product line offers a cost effective solution to the most challenging transmit and

MRF9045MBR1

Abstract: MRF9045MR1 6020G
Contextual Info: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices