BLF6G20-110 Search Results
BLF6G20-110 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| BLF6G20-110 |
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Power LDMOS transistor | Original | 68.75KB | 9 | ||
| BLF6G20-110 |
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 31 %; Frequency band: 1800 - 2000 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502A ; Power gain: 19 dB | Original | 76.32KB | 10 | ||
| BLF6G20-110,112 |
|
Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 31 %; Frequency band: 1800 - 2000 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502A ; Power gain: 19 dB; Package: SOT502A (LDMOST); Container: Blister pack | Original | 76.32KB | 10 |
BLF6G20-110 Price and Stock
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Ampleon BLF6G20-110,112RF MOSFET LDMOS 28V SOT502A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BLF6G20-110,112 | Tray |
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BLF6G20-110,112 | Tube | 26 Weeks | 60 |
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NXP Semiconductors BLF6G20-110,112Discontinued |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BLF6G20-110,112 | 595 |
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Get Quote | |||||||