AGR19045EF Search Results
AGR19045EF Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| AGR19045EF | Agere Systems | 45 W, 1930 MHz - 1990 MHz, PCS LDMOS RF Power Transistor | Original | 175.11KB | 11 | ||
| AGR19045EF | Agere Systems | FET Transistor, 45W, 1930MHz-1990MHz, N-Channel E-Mode, Lateral MOSFET Transistor | Original | 511.95KB | 10 | ||
| AGR19045EF | TriQuint Semiconductor | 45 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor | Original | 314.66KB | 10 |
AGR19045EF Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
AGR19045XFContextual Info: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for |
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agr19045efhz--1990agr19045xf | |
CDM 03
Abstract: AGR19045EF AGR19045XF CDR33BX104AKWS JESD22-C101A
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agr19045efhz--1990cargr19045efagr19045xf+5 | |
J600 transistorContextual Info: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for |
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agr19045efhz--1990ds04-240rfppds04-077rfpp+1 | |
6603 Shenzhen
Abstract: AGR19045E AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor
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agr19045ehz--1990ds04-077rfppds02-378rfpp+7 | |
j306 TRANSISTOR equivalent
Abstract: transistor J306 zl 04 FET j306
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agr19045ehz--1990agr19045euagr19045ef+5 | |
j306 TRANSISTOR equivalent
Abstract: transistor J306 AGR19045E AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor z14 L
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agr19045ehz--1990agr19045euagr19045ef+6 | |
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Contextual Info: Product Brief August 2003 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19045E is a 45 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for |
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agr19045ehz--1990agr19045euagr19045ef+1 | |
AGRA10EM
Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
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ca03-005rfpp-7ca03-005rfpp-6agra10emapp550+8 |